ACS109HMSR-03 [RENESAS]

AC SERIES, DUAL POSITIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC16, DIE-16;
ACS109HMSR-03
型号: ACS109HMSR-03
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

AC SERIES, DUAL POSITIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC16, DIE-16

输出元件
文件: 总2页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ACS109MS  
Data Sheet  
July 1999  
File Number 4760  
Radiation Hardened Dual J-K Flip-Flop  
with Set and Reset  
Features  
• QML Qualified Per MIL-PRF-38535 Requirements  
• 1.25 Micron Radiation Hardened SOS CMOS  
The Radiation Hardened ACS109MS is a Dual J-K Flip-  
Flop with Set and Reset. These Flip-Flops have  
independent J, K, Set, Reset, and Clock inputs and Q and  
Q outputs. The outputs change state on the positive-going  
transition of the clock. Set and Reset are accomplished  
asynchronously by Low-level inputs. All inputs are buffered  
and the outputs are designed for balanced propagation  
delay and transition times.  
• Radiation Environment  
- Latch-Up Free Under Any Conditions  
5
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)  
-10  
- SEU Immunity. . . . . . . . . . . . . <1 x 10  
Errors/Bit/Day  
2
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm )  
• Input Logic Levels. . . . V = (0.3)(V ), V = (0.7)(V  
IL CC IH  
)
CC  
The ACS109MS is fabricated on a CMOS Silicon on  
Sapphire (SOS) process, which provides an immunity to  
Single Event Latch-up and the capability of highly reliable  
performance in any radiation environment. These devices  
offer significant power reduction and faster performance  
when compared to ALSTTL types.  
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)  
• Quiescent Supply Current . . . . . . . . . . . . . . . 10µA (Max)  
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .25ns (Max)  
Applications  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed below must be used when ordering.  
• High Speed Control Circuits  
• Sensor Monitoring  
• Low Power Designs  
Detailed Electrical Specifications for the ACS109MS are  
contained in SMD 5962-98632. A “hot-link” is provided  
on our homepage for downloading.  
http://www.intersil.com/spacedefense/spaceselect.htm  
Ordering Information  
INTERNAL MARKETING  
o
ORDERING NUMBER  
5962F9863201VCC  
NUMBER  
TEMP. RANGE ( C)  
PACKAGE  
16 Ld SBDIP  
DESIGNATOR  
CDIP2-T16  
CDIP2-T16  
CDFP4-F16  
CDFP4-F16  
NA  
ACS109DMSR-03  
-55 to 125  
ACS109D/SAMPLE-03  
5962F9863201VXC  
ACS109K/SAMPLE-03  
5962F9863201V9A  
ACS109D/SAMPLE-03  
ACS109KMSR-03  
25  
-55 to 125  
25  
16 Ld SBDIP  
16 Ld Flatpack  
16 Ld Flatpack  
Die  
ACS109K/SAMPLE-03  
ACS109HMSR-03  
25  
Pinouts  
ACS109MS  
ACS109MS  
(SBDIP)  
(FLATPACK)  
TOP VIEW  
TOP VIEW  
1R  
1J  
1
2
3
4
5
6
7
8
16  
V
1R  
1J  
1
2
3
4
5
6
7
8
16 V  
CC  
CC  
15  
14  
13  
12  
11  
10  
9
2R  
2J  
15 2R  
14 2J  
13 2K  
12 2CP  
11 2S  
10 2Q  
1K  
1K  
1CP  
1S  
2K  
2CP  
2S  
1CP  
1S  
1Q  
1Q  
1Q  
2Q  
2Q  
1Q  
GND  
9
2Q  
GND  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1
ACS109MS  
Die Characteristics  
DIE DIMENSIONS:  
PASSIVATION:  
Size: 2390µm x 2390µm (94 mils x 94 mils)  
Thickness: 525µm ±25µm (20.6 mils ±1 mil)  
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)  
Type: Phosphorous Silicon Glass (PSG)  
Thickness: 1.30µm ±0.15µm  
SPECIAL INSTRUCTIONS  
METALLIZATION: AI  
Bond V  
First  
ADDITIONAL INFORMATION:  
CC  
Metal 1 Thickness: 0.7µm ±0.1µm  
Metal 2 Thickness: 1.0µm ±0.1µm  
5
2
Worst Case Current Density: <2.0 x 10 A/cm  
Transistor Count: 236  
SUBSTRATE POTENTIAL  
Unbiased Insulator  
Metallization Mask Layout  
ACS109MS  
V
2R  
1J  
(2)  
1R  
(1)  
CC  
(16)  
(15)  
(14) 2J  
(13) 2K  
(12) 2CP  
(11) 2S  
1K (3)  
1CP (4)  
1S (5)  
1Q (6)  
(7)  
1Q  
(8)  
GND  
(9)  
2Q  
(10)  
2Q  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (321) 724-7000  
FAX: (321) 724-7240  
2

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