ACS109HMSR-03 [RENESAS]
AC SERIES, DUAL POSITIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC16, DIE-16;型号: | ACS109HMSR-03 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | AC SERIES, DUAL POSITIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC16, DIE-16 输出元件 |
文件: | 总2页 (文件大小:41K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ACS109MS
Data Sheet
July 1999
File Number 4760
Radiation Hardened Dual J-K Flip-Flop
with Set and Reset
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
The Radiation Hardened ACS109MS is a Dual J-K Flip-
Flop with Set and Reset. These Flip-Flops have
independent J, K, Set, Reset, and Clock inputs and Q and
Q outputs. The outputs change state on the positive-going
transition of the clock. Set and Reset are accomplished
asynchronously by Low-level inputs. All inputs are buffered
and the outputs are designed for balanced propagation
delay and transition times.
• Radiation Environment
- Latch-Up Free Under Any Conditions
5
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)
-10
- SEU Immunity. . . . . . . . . . . . . <1 x 10
Errors/Bit/Day
2
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm )
• Input Logic Levels. . . . V = (0.3)(V ), V = (0.7)(V
IL CC IH
)
CC
The ACS109MS is fabricated on a CMOS Silicon on
Sapphire (SOS) process, which provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment. These devices
offer significant power reduction and faster performance
when compared to ALSTTL types.
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . . 10µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .25ns (Max)
Applications
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
Detailed Electrical Specifications for the ACS109MS are
contained in SMD 5962-98632. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/spaceselect.htm
Ordering Information
INTERNAL MARKETING
o
ORDERING NUMBER
5962F9863201VCC
NUMBER
TEMP. RANGE ( C)
PACKAGE
16 Ld SBDIP
DESIGNATOR
CDIP2-T16
CDIP2-T16
CDFP4-F16
CDFP4-F16
NA
ACS109DMSR-03
-55 to 125
ACS109D/SAMPLE-03
5962F9863201VXC
ACS109K/SAMPLE-03
5962F9863201V9A
ACS109D/SAMPLE-03
ACS109KMSR-03
25
-55 to 125
25
16 Ld SBDIP
16 Ld Flatpack
16 Ld Flatpack
Die
ACS109K/SAMPLE-03
ACS109HMSR-03
25
Pinouts
ACS109MS
ACS109MS
(SBDIP)
(FLATPACK)
TOP VIEW
TOP VIEW
1R
1J
1
2
3
4
5
6
7
8
16
V
1R
1J
1
2
3
4
5
6
7
8
16 V
CC
CC
15
14
13
12
11
10
9
2R
2J
15 2R
14 2J
13 2K
12 2CP
11 2S
10 2Q
1K
1K
1CP
1S
2K
2CP
2S
1CP
1S
1Q
1Q
1Q
2Q
2Q
1Q
GND
9
2Q
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
ACS109MS
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS
METALLIZATION: AI
Bond V
First
ADDITIONAL INFORMATION:
CC
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
5
2
Worst Case Current Density: <2.0 x 10 A/cm
Transistor Count: 236
SUBSTRATE POTENTIAL
Unbiased Insulator
Metallization Mask Layout
ACS109MS
V
2R
1J
(2)
1R
(1)
CC
(16)
(15)
(14) 2J
(13) 2K
(12) 2CP
(11) 2S
1K (3)
1CP (4)
1S (5)
1Q (6)
(7)
1Q
(8)
GND
(9)
2Q
(10)
2Q
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
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Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
2
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