BN1A4Z-A [RENESAS]

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR;


型号：	BN1A4Z-A
厂家：	RENESAS TECHNOLOGY CORP
描述：	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件：	总6页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Old Company Name in Catalogs and Other Documents

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April 1^st, 2010

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DATA SHEET

COMPOUND TRANSISTOR

BN1A4Z

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

On-chip bias resistor

(R¹= 10 kΩ)

•

Complementary transistor with BA1A3Q

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

−60

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

−50

−5

−100

−200

250

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −50 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

V^CE= −5.0 V, I^C= −5.0 mA

V^CE= −5.0 V, I^C= −50 mA

I^C= −5.0 mA, I^B= −0.25 mA

V^CE= −5.0 V, I^C= −100 µA

V^CE= −0.2 V, I^C= −5.0 mA

h^FE1**

h^FE2**

V^CE(sat)**

V^IL**

V^IH**

R¹

135

100

190

170

600

−

DC current gain

−0.07

−0.57

−0.9

−0.2

−0.5

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

−2.0

kΩ

µs

7.0

13.0

0.2

5.0

6.0

V^CC= −5.0 V, R^L= 1.0 kΩ

V^I= −5.0 V, PW = 2.0 µs

duty cycle≤2 %

Turn-on time

t^on

Storage time

t^stg

Turn-off time

t^off

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %

h^FECLASSIFICATION

Marking

h^FE1

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13584EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

BN1A4Z

TYPICAL CHARACTERISTICS (T^a= 25°C)

Data Sheet D13584EJ1V0DS

BN1A4Z

Data Sheet D13584EJ1V0DS

BN1A4Z

•

The information in this document is current as of July, 2001. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

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(Note)

(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4

BN1A4Z-A [RENESAS]

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