CD4009UBDMSR [RENESAS]
4000/14000/40000 SERIES, HEX 1-INPUT INVERT GATE, CDIP16, BRAZE SEALED, DIP-16;
| 型号： | CD4009UBDMSR |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 4000/14000/40000 SERIES, HEX 1-INPUT INVERT GATE, CDIP16, BRAZE SEALED, DIP-16 栅 CD 输入元件 逻辑集成电路 触发器 |
| 文件： | 总8页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CD4009UBMS
Data Sheet
November 1994
File Number 3293
CMOS Hex Buffers/Converter
Features
• Inverting Type
CD4009UBMS Hex Buffer/Converter may be used as a
CMOS to TTL or DTL logic-level converter or a CMOS high-
sink-current driver.
• High-Voltage Type (20V Rating)
• 100% Tested for Quiescent Current at 20V
The CD4049UB is the preferred hex buffer replacement for
the CD4009UBMS in all applications except multiplexers.
For applications not requiring high sink current or voltage
conversion, the CD4069UB Hex Inverter is recommended.
• Maximum Input Current of 1µA at 18V Over Full
Package-Temperature Range;
o
- 10nA at 18V and +25 C
The CD4009UBMS is supplied in these 16 lead outline pack-
ages:
• 5V, 10V and 15V Parametric Ratings
Braze Seal DIP
Frit Seal DIP
H4S
H1E
Applications
• CMOS To DTL/TTL Hex Converter
• CMOS Current “Sink” or “Source” Driver
• CMOS High-to-Low Logic-Level Converter
• Multiplexer - 1 to 6 or 6 to 1
Ceramic Flatpack H3X
Pinout
Functional Diagram
CD4009UBMS
TOP VIEW
3
2
A
B
C
D
E
F
G = A
H = B
I = C
VCC
G = A
A
1
2
3
4
5
6
7
8
16 VDD
15 L = F
14 F
5
4
H = B
B
13 NC
12 K = E
11 E
7
6
I = C
C
9
10
12
15
J = D
K = E
L = F
10 J = D
13
1
NC
VCC
VSS
VDD
9
D
VSS
11
14
NC = NO CONNECTION
8
16
NC = NO CONNECTION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
CD4009UBMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . .-0.5V to +20V
(Voltage Referenced to VSS Terminals)
Thermal Resistance. . . . . . . . . . . . . . . .
Ceramic DIP and FRIT Package . . . .
Flatpack Package. . . . . . . . . . . . . . . .
θ
θ
jc
ja
o
o
80 C/W
20 C/W
o
o
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
70 C/W
20 C/W
o
Maximum Package Power Dissipation (PD) at +125 C
o
o
o
o
Operating Temperature Range . . . . . . . . . . . . . . . -55 C to +125 C
Package Types D, F, K, H
For TA = -55 C to +100 C (Package Type D, F, K) . . . . . .500mW
o
o
For TA = +100 C to +125 C (Package Type D, F, K) . . . . . Derate
o
o
o
Storage Temperature Range (TSTG). . . . . . . . . . . -65 C to +150 C
Linearity at 12mW/ C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265 C
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
o
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
MIN MAX UNITS
GROUP A
SUBGROUPS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
TEMPERATURE
o
IDD
VDD = 20V, VIN = VDD or GND
1
+25 C
-
2
200
2
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
o
2
+125 C
-
o
VDD = 18V, VIN = VDD or GND
3
-55 C
-
o
Input Leakage Current
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25 C
-100
-
o
2
+125 C
-1000
-
o
VDD = 18V
VDD = 20
3
-55 C
-100
-
o
IIH
VIN = VDD or GND
1
+25 C
-
-
-
-
100
1000
100
50
-
o
2
+125 C
o
VDD = 18V
3
-55 C
o
o
o
Output Voltage
VOL15 VDD = 15V, No Load
VOH15 VDD = 15V, No Load (Note 3)
1, 2, 3
+25 C, +125 C, -55 C
o
o
o
Output Voltage
1, 2, 3
+25 C, +125 C, -55 C 14.95
o
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 5V, VOUT = 0.4V
1
+25 C
3.0
8.0
24.0
-
-
mA
mA
mA
mA
mA
mA
mA
V
o
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
1
+25 C
-
o
1
+25 C
-
o
1
+25 C
-0.2
-0.8
-0.45
-1.5
-0.7
2.8
o
VDD = 5V, VOUT = 2.5V
1
+25 C
-
o
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
1
+25 C
-
o
1
1
+25 C
-
o
+25 C
-2.8
0.7
o
VSS = 0V, IDD = 10µA
1
+25 C
V
o
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V, VOH > 4.5V, VOL < 0.5V
7
+25 C
VOH > VOL <
VDD/2 VDD/2
V
o
7
+25 C
o
8A
8B
1, 2, 3
+125 C
o
-55 C
o
o
o
Input Voltage Low
(Note 2)
VIL
VIH
VIL
VIH
+25 C, +125 C, -55 C
-
4.0
-
1.0
-
V
V
V
V
o
o
o
Input Voltage High
(Note 2)
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
o
o
o
Input Voltage Low
(Note 2)
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
+25 C, +125 C, -55 C
2.5
-
o
o
o
Input Voltage High
(Note 2)
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
+25 C, +125 C, -55 C 12.5
NOTES: 1. All voltages referenced to device GND, 100% testing being im- 3. For accuracy, voltage is measured differentially to VDD. Limit is
plemented.
0.050V max.
2. Go/No Go test with limits applied to inputs
2
CD4009UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
GROUP A
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
SUBGROUPS TEMPERATURE
MIN
MAX
60
UNITS
ns
o
Propagation Delay
TPHL
VDD = 5V, VIN = VDD or GND
9
10, 11
9
+25 C
o
-
-
-
-
-
-
-
-
o
+125 C, -55 C
81
ns
o
Propagation Delay
Transition Time
Transition Time
NOTES:
TPLH
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
VDD = 5V, VIN = VDD or GND
VDD = 5V, VIN = VDD or GND
+25 C
140
189
70
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
95
ns
o
+25 C
350
473
ns
o
o
10, 11
+125 C, -55 C
ns
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
o
o
2. -55 C and +125 C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
1
UNITS
µA
o
o
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55 C, +25 C
-
-
-
-
-
-
-
o
+125 C
30
2
µA
o
o
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
1, 2
1, 2
-55 C, +25 C
µA
o
+125 C
60
2
µA
o
o
-55 C, +25 C
µA
o
+125 C
120
50
µA
o
o
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL4
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 4.5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25 C, +125 C, -
mV
o
55 C
o
o
+25 C, +125 C, -
-
50
-
mV
V
o
55 C
o
o
+25 C, +125 C, -
4.95
9.95
o
55 C
o
o
+25 C, +125 C, -
-
V
o
55 C
o
+25 C
2.6
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
o
+125 C
1.8
-
o
-55 C
3.2
-
o
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Input Voltage Low
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VIL
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
+125 C
2.1
-
-
o
-55 C
3.75
o
+125 C
5.6
-
o
-55 C
10.0
-
o
+125 C
16.0
-
o
-55 C
30.0
-
o
+125 C
-
-
-
-
-
-
-
-
-
-0.15
-0.25
-0.58
-1.0
-0.33
-0.55
-1.1
-1.65
2
o
-55 C
o
+125 C
o
-55 C
o
+125 C
o
-55 C
o
+125 C
o
-55 C
o
o
+25 C, +125 C, -
o
55 C
3
CD4009UBMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
o
o
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25 C, +125 C, -
8
-
V
o
55 C
o
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
Transition Time
TPHL
TPLH
TPHL
TPLH
TTHL
TTLH
CIN
VDD = 10V, VCC = 10V
VDD = 15V, VCC = 15V
VDD = 10V, VCC = 10V
VDD = 15V, VCC = 15V
VDD = 10V, VCC = 5V
VDD = 15V, VCC = 5V
VDD = 10V, VCC = 5V
VDD = 15V, VCC = 5V
VDD = 10V
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
+25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
40
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
o
+25 C
o
+25 C
80
o
+25 C
60
o
+25 C
30
o
+25 C
20
o
+25 C
70
o
+25 C
60
o
+25 C
40
o
VDD = 15V
+25 C
30
o
Transition Time
VDD = 10V
+25 C
150
110
22.5
o
VDD = 15V
+25 C
o
Input Capacitance
NOTES:
Any Input
+25 C
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
NOTES
1, 4
TEMPERATURE
MIN
MAX
7.5
UNITS
o
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
+25 C
-
-2.8
-
µA
V
o
N Threshold Voltage
VNTH
1, 4
+25 C
-0.2
±1
o
N Threshold Voltage
Delta
∆VNTH VDD = 10V, ISS = -10µA
1, 4
+25 C
V
o
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10µA
1, 4
1, 4
+25 C
0.2
-
2.8
V
V
o
P Threshold Voltage
Delta
∆VPTH VSS = 0V, IDD = 10µA
+25 C
±1
o
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25 C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
VDD = 5V, VCC = 5V
o
Propagation Delay Time
TPHL
TPLH
1, 2, 3, 4
+25 C
-
1.35 x
ns
o
+25 C
Limit
o
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25 C limit.
4. Read and Record
O
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 C
PARAMETER
Supply Current - MSI-1
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
DELTA LIMIT
± 0.2µA
IOL5
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
IOH5A
4
CD4009UBMS
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
1, 7, 9
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
1, 7, 9
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
PDA (Note 1)
1, 7, 9
IDD, IOL5, IOH5A
1, 7, 9, Deltas
Final Test
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
Group A
Group B
Subgroup B-5
Subgroup B-6
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
Group D
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
MIL-STD-883
METHOD
CONFORMANCE GROUPS
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Table 4
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
50kHz 25kHz
FUNCTION
OPEN
GROUND
VDD
1, 16
9V ± -0.5V
Static Burn-In 1 Note 1 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14
Static Burn-In 2 Note 1 2, 4, 6, 10, 12, 13, 15
8
8
8
1, 3, 5, 7, 9, 11, 14, 16
1, 16
Dynamic Burn-In Note 1
Irradiation Note 2
NOTE:
13
2, 4, 6, 10, 12, 15
3, 5, 7, 9, 11, 14
2, 4, 6, 10, 12, 13, 15
1, 3, 5, 7, 9, 11, 14, 16
1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
Schematic Diagram
VDD
VCC
*ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
VDD
P
N
P
*
INPUT
VCC
GND
VDD
GND
OUTPUT
CONFIGURATION:
VSS
N
N
HEX COS/MOS TO DTL OR TTL
CONVERTER (INVERTING)
WIRING SCHEDULE:
CONNECT VCC TO DTL OR
TTL SUPPLY
CONNECT VDD TO COS/MOS
SUPPLY
VSS
5
CD4009UBMS
Typical Performance Characteristics
o
T
= +125 C
o
A
AMBIENT TEMPERATURE (T ) = +25 C
A
MAX
MIN
VO
o
T
= -55 C
A
VI
SUPPLY VOLTS (VDD) = 15V
5
4
3
2
1
5
4
3
2
1
SUPPLY VOLTS (VDD) = 15V
TEST CONDITION: VCC = 5V
15V
15V
15V
5V
10V
5V
10V
5V
5V
10V
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
INPUT VOLTS (VI)
INPUT VOLTS (VI)
FIGURE 1. MINIMUM AND MAXIMUM VOLTAGE TRANSFER
CHARACTERISTICS
FIGURE 2. TYPICAL VOLTAGE TRANSFER CHARACTERIS-
TICS AS FUNCTION OF TEMPERATURE
o
o
AMBIENT TEMPERATURE (T ) = +25 C
A
AMBIENT TEMPERATURE (T ) = +25 C
A
TYPICAL TEMPERATURE COEFFICIENT
o
60
50
40
30
20
10
FOR ID = -0.3%/ C
100
80
60
40
20
GATE-TO-SOURCE
VOLTAGE (VGS) = 15V
GATE-TO-SOURCE
VOLTAGE (VGS) = 15V
10V
10V
5V
5V
0
5
10
15
20
0
2
4
6
8
10
12
14
DRAIN-TO-SOURCE VOLTS (VDS)
DRAIN-TO-SOURCE VOLTS (VDS)
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISITICS
FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-7
-6
-5
-4
-3
-2
-1
0
-7
-6
-5
-4
-3
-2
-1
0
GATE-TO-SOURCE
VOLTAGE (VGS) = -5V
GATE-TO-SOURCE
VOLTAGE (VGS) = -5V
-1
-2
-3
-4
-5
-6
-7
-8
-9
-2
-4
-10V
-6
-10V
-15V
-8
-15V
-10
-11
-12
-10
-12
o
o
AMBIENT TEMPERATURE (T ) = +25 C
AMBIENT TEMPERATURE (T ) = +25 C
A
A
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
6
CD4009UBMS
o
o
AMBIENT TEMPERATURE (T ) = +25 C
AMBIENT TEMPERATURE (T ) = +25 C
A
A
120
100
SUPPLY VOLTAGE (VDD) = 5V
60
50
80
60
SUPPLY VOLTAGE (VDD) = 5V
40
30
20
10
10V
15V
10V
15V
40
20
0
10 20
30 40
50 60 70
80 90 100
0
20
40
60
80
100
120
LOAD CAPACITANCE (CL) (pf)
LOAD CAPACITANCE (CL) (pF)
FIGURE 7. TYPICAL LOW-TO-HIGH PROPAGATION DELAY
TIME vs LOAD CAPACITANCE
FIGURE 8. TYPICAL HIGH-TO-LOW PROPAGATION DELAY
TIME vs LOAD CAPACITANCE
o
AMBIENT TEMPERATURE (T ) = +25 C
A
o
AMBIENT TEMPERATURE (T ) = +25 C
A
60
SUPPLY VOLTAGE (VDD) = 5V
250
SUPPLY VOLTAGE (VDD) = 5V
50
200
150
40
10V
10V
15V
30
100
50
20
15V
10
0
10 20
30 40
50 60 70
80 90 100
0
20
40
60
80
100
120
LOAD CAPACITANCE (CL) (pf)
LOAD CAPACITANCE (CL) (pF)
FIGURE 9. TYPICAL LOW-TO-HIGH TRANSITION TIME vs
LOAD CAPACITANCE
FIGURE 10. TYPICAL HIGH-TO-LOW TRANSISTION TIME vs
LOAD CAPACITANCE
4
8
10
AMBIENT TEMPERATURE
6
4
o
(T ) = +25 C
A
2
SUPPLY VOLTAGE
(VCC) = 15V
3
8
10V
10
6
4
10V
5V
2
2
10
10
8
6
4
LOAD CAPACITANCE (CL) = 50pF
CL = 15pF
2
2
4
6
8
2
4
6
8
2
4
6
8
2
3
4
10
10
10
10
INPUT FREQUENCY (fφ) kHz
FIGURE 11. TYPICAL DISSIPATION CHARACTERISTICS
7
CD4009UBMS
Chip Dimensions and Pad Layout
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
-3
as indicated. Grid graduations are in mils (10 inch)
METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
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8
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