CR3KM-12-D-A8 [RENESAS]

4.7 A, 600 V, SCR, TO-220AB, TO-220FN, 3 PIN;
CR3KM-12-D-A8
型号: CR3KM-12-D-A8
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

4.7 A, 600 V, SCR, TO-220AB, TO-220FN, 3 PIN

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CR3KM-12  
Thyristor  
Low Power Use  
REJ03G0386-0200  
Rev.2.00  
Mar.28.2005  
Features  
IT (AV) : 3 A  
DRM : 600 V  
GT : 100 µA  
Viso : 2000 V  
Insulated Type  
Glass Passivation Type  
UL Recognized : Yellow Card No. E223904  
File No. E80271  
V
I
Outline  
RENESAS Package code: PRSS0003AB-A  
(Package name: TO-220FN)  
e  
de  
ate  
Applications  
TV sets, control of household equket, and other general purpose control applications  
Maximum Ratings  
Voltage class  
Parame
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
Repetitive peak off-state voltageNote1  
DC off-state voltageNote1  
VRRM  
VRSM  
600  
720  
480  
600  
480  
V
V
V
V
V
VR (DC)  
VDRM  
VD (DC)  
Rev.2.00, Mar.28.2005, page 1 of 7  
CR3KM-12  
Parameter  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
4.7  
Unit  
A
Conditions  
RMS on-state current  
Average on-state current  
3.0  
A
Commercial frequency, sine half wave  
180° conduction, Tc = 103°C  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
70  
A
60Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
24.5  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
Mass  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
0.5  
W
W
V
0.1  
6
6
0.3  
V
A
– 40 to +125  
– 40 to +125  
2.0  
°C  
°C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
2000  
V
Ta = 25°C, AC 1 minute,  
eterminal to case  
Notes: 1. With gate to cathode resistance RGK = 220 .  
Electrical Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Test conditions  
Repetitive peak reverse current  
IRRM  
Tj = 125°C, VRRM applied,  
RGK = 220 Ω  
Repetitive peak off-state current  
On-state voltage  
IDRM  
VTM  
A  
V
Tj = 125°C, VDRM applied,  
RGK = 220 Ω  
Tc = 25°C, ITM = 10 A,  
instantaneous value  
Gate trigger voltage  
VGT  
0.8  
V
V
Tj = 25°C, VD = 6 V, IT = 0.1 A  
Gate non-trigger voltage  
Tj = 125°C, VD = 1/2 VDRM  
RGK = 220 Ω  
Gate trigger current  
Thermal resistance  
100Note3  
4.1  
µA  
Tj = 25°C, VD = 6 V, IT = 0.1 A  
Junction to caseNote2  
°C/W  
Notes: 2. The contact thse of greasing is 0.5°C/W.  
3. If special valuose item D or E from those listed in the table below if possible.  
Item  
D
E
IGT (µA)  
20 t
to 100  
1 to 50  
20 to 100  
The above values do node the current flowing through the 220 resistance between the gate and  
cathode.  
Rev.2.00, Mar.28.2005, page 2 of 7  
CR3KM-12  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tc = 25°C  
5
3
2
101  
7
5
3
2
100  
7
5
3
2
10–1  
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
igger Current vs.  
Temperature  
Gate Characteristics  
102  
7
5
Typical Example  
I
(25°C)  
GT  
3
2
# 1 45µA  
# 2 18µA  
V
= 6V  
P
= 0.5W  
FGM  
GM  
101  
7
5
3
2
P
= 0.1W  
G(AV)  
V
= 0.8V  
GT  
100  
7
7
5
3
2
I
= 100µA  
GT  
(Tj = 25°C)  
5
3
2
I
FG
10–1  
7
5
100  
5710123 57100 23
–40 –20  
0
20 40 60 80 100 120  
Gat
Junction Temperature (°C)  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
Gate T
Junction
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
102  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
7
5
3
2
Distribution  
Typical Example  
101  
7
5
3
2
100  
7
5
3
2
10–1  
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100  
–40 –20  
0
20 40 60 80 100 120  
Junction Temperature (°C)  
Time (s)  
Rev.2.00, Mar.28.2005, page 3 of 7  
CR3KM-12  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Half Wave)  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
8
160  
140  
120  
100  
80  
Resistive,  
inductive loads  
7
6
5
4
3
2
1
0
θ
180°  
360°  
120°  
90°  
60°  
θ = 30°  
θ = 30°  
90° 180°  
60° 120°  
60  
θ
40  
360°  
20  
Resistive,  
inductive loads  
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
Mrage Power Dissipation  
ase Full Wave)  
(Single-Phase Half Wave)  
160  
140  
120  
100  
80  
Resistive,  
inductive loads  
Natural convection  
2
1
0
θ
180°  
360°  
120°  
90°  
θ = 180°  
60°  
120°  
90°  
θ = 30°  
60°  
30°  
60  
40  
θ
θ
360°  
Resistive loads  
3.0 4.0 5.0  
20  
0
0
0.2 0.4 0.6
Average
0
1.0  
2.0  
Average On-State Current (A)  
Allowab
Averag
(Single-P)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Resistive loads  
Natural convection  
Resistive oads  
θ
θ
θ
θ
360°  
360°  
θ = 180°  
120°  
90°  
60°  
30°  
θ = 30° 60° 90° 120° 180°  
60  
60  
40  
40  
20  
20  
0
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Average On-State Current (A)  
Average On-State Current (A)  
Rev.2.00, Mar.28.2005, page 4 of 7  
CR3KM-12  
Breakover Voltage vs.  
Junction Temperature  
Holding Current vs.  
Junction Temperature  
160  
140  
120  
100  
80  
102  
7
V
R
= 12V  
Typical Example  
= 220Ω  
D
5
= 1kΩ  
GK  
R
GK  
3
2
Distribution  
Typical Example  
101  
7
5
3
2
60  
100  
7
5
40  
3
2
20  
0
10–1  
–4020 0 20 40 60 80 100120140160  
–4020 0 20 40 60 80 100120140160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Holding Current vs.  
Gate to Cathode Resistance  
Turn-On Time vs.  
Gate Current  
400  
Typical Example  
(25°C)  
# 1 25µA  
# 2 50µA  
V
= 100V  
D
I
Ta = 25°C  
Typical Example  
GT  
350  
300  
250  
200  
150  
100  
50  
I
(25°C)  
# 33µA  
GT  
# 1  
# 2  
#
4
3
2
10–1  
0
100  
2
3
4 5 7 101  
2
3
4 5 7 102  
10–1 2 3 5 7 100 2 3 
Gate to Cat
Gate Current (mA)  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
Jun
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
I
V
= 2A  
T
Typical Example  
= 50V, V = 50V  
D
R
dv/dt = 5V/µs  
60  
Typical Example  
Distribution  
40  
20  
0
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
–4020 0 20 40 60 80 100120140160  
Junction Temperature (°C)  
Rev.2.00, Mar.28.2005, page 5 of 7  
CR3KM-12  
Gate Trigger Current vs.  
Gate Current Pulse Width  
104  
7
5
tw  
Typical Example  
3
2
0.1s  
103  
7
5
3
2
102  
7
5
3
2
101  
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
Gate Current Pulse Width (µs)  
Rev.2.00, Mar.28.2005, page 6 of 7  
CR3KM-12  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
PRSS0003AB-A  
Package Name  
TO-220FN  
MASS[Typ.]  
2.0g  
Unit: mm  
2.8 ± 0.2  
10 ± 0.3  
φ3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
Order Code  
Standard order  
code example  
Lead form  
Standard pa
Standard order code  
Straight type  
Lead form  
Tube  
Tube  
0 Type name  
50 Type name – Lead forming code  
CR3KM-12  
CR3KM-12-A8  
Note : Please confirm the ping in detail.  
Rev.2.00, Mar.28.2005, page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-mhiyoda-ku, Tokyo 100-0004, Japan  
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Remember to give due consideration to safety when making your circuit designs, with appropriate ent of substitutive, auxiliary circuits,  
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Colophon .2.0  

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