DAM1MA30 [RENESAS]
600W, UNIDIRECTIONAL, SILICON, TVS DIODE;型号: | DAM1MA30 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE 电视 |
文件: | 总3页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SURGE SUPPRESSOR DIODE
DAM1MA
FEATURES
OUTLINE DRAWING
• High transient reverse power capability
suitable for protecting automobile electronic
components etc.
Unit in mm(inch)
Direction of polarity
Type mark
• High heat-resistant due to glass passivation.
Cathode band
Lot mark
0.1MAX
(0.004)
2.0
4.3
(0.08)
(0.17)
4.7
(0.19)
1.2
1.2
(0.05)
(0.05)
Weight: 0.05 (g)
ABSOLUTE MAXIMUM RATINGS
Ratings
Items
Symbols Units
Non-Repetitive Peak Reverse One-
Cycle Dissipation
600(Rectangular pulse t=0.1ms Tj=25°C start)
PRSM
W
°C
°C
V
Operating Junction Temperature
Storage Temperature
Tj
-40 ~ +150
-40 ~ +150
Tstg
VDC
Refer to characteristics column
DC Reverse Voltage
CHARACTERISTICS(TL=25°C)
Characteristics
Maximum
Reverse
Current
DC
Zener Voltage Vz (V)
Reverse
Voltage
VDC
Maximum
Dynamic
Impedance
Zz (ohm)
Test Current
Type
Iz
(mA)
Minimum
Maximum
IRRM
(µA)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
VR
(V)
7
(V)
7
DAM1MA10
DAM1MA11
DAM1MA12
DAM1MA13
DAM1MA15
DAM1MA16
DAM1MA18
DAM1MA20
DAM1MA22
DAM1MA24
DAM1MA27
DAM1MA30
DAM1MA33
DAM1MA36
DAM1MA39
DAM1MA43
DAM1MA47
DAM1MA51
DAM1MA68
DAM1MA75
DAM1MA82
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.6
41.9
46.2
50.7
55.1
74.8
82.5
90.2
15
25
25
25
25
25
15
15
15
15
10
10
10
10
10
10
6
8
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
33.4
36.1
39.8
43.3
46.9
61.2
67.5
73.8
15
8
9
15
9
10
11
12
13
14
16
18
20
22
24
26
28
31
34
37
49
54
59
15
10
11
12
13
14
16
18
20
22
24
26
28
31
34
37
55
61
66
15
15
15
15
15
15
15
15
15
15
30
30
30
6
30
6
60
4
60
4
5
60
3
5
PDE-DAM1MA-0
DAM1MA
Typical zener characteristics ( Vz:10~51V)
Typical zener characteristics ( Vz:68~82V)
1000
1000
100
100
10
DAM1MA27
DAM1MA30
DAM1MA33
DAM1MA36
10
1
1
0.1
0.1
TL=25˚C
110
TL=25˚C
0.01
0.001
0.01
0.001
0
10
20
30
40
50
60
70
50
60
70
80
90
100
120
ZENER VOLTAGE (V)
ZENER VOLTAGE (V)
Typical reverse power characteristic
Transient thermal impedance
(Rectangular pulse non-repetitive)
200
100
1000
Rth(j-a)
Rth(j-L)
10
TL=25°C
100
Lead temperature
Soldering land
1
(
6mm)
On glass-epoxi
substrate( 50mm)
10
0.01
0.1
0.1
1
10
100
0.001
0.01
0.1
TIME (s)
1
10
100
RECTANGULAR PULSE DURATION (ms)
PDE-DAM1MA-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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