DAM1MA36 [RENESAS]

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE;
DAM1MA36
型号: DAM1MA36
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

光电二极管 电视
文件: 总3页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SURGE SUPPRESSOR DIODE  
DAM1MA  
FEATURES  
OUTLINE DRAWING  
High transient reverse power capability  
suitable for protecting automobile electronic  
components etc.  
Unit in mm(inch)  
Direction of polarity  
Type mark  
High heat-resistant due to glass passivation.  
Cathode band  
Lot mark  
0.1MAX  
(0.004)  
2.0  
4.3  
(0.08)  
(0.17)  
4.7  
(0.19)  
1.2  
1.2  
(0.05)  
(0.05)  
Weight: 0.05 (g)  
ABSOLUTE MAXIMUM RATINGS  
Ratings  
Items  
Symbols Units  
Non-Repetitive Peak Reverse One-  
Cycle Dissipation  
600(Rectangular pulse t=0.1ms Tj=25°C start)  
PRSM  
W
°C  
°C  
V
Operating Junction Temperature  
Storage Temperature  
Tj  
-40 ~ +150  
-40 ~ +150  
Tstg  
VDC  
Refer to characteristics column  
DC Reverse Voltage  
CHARACTERISTICS(TL=25°C)  
Characteristics  
Maximum  
Reverse  
Current  
DC  
Zener Voltage Vz (V)  
Reverse  
Voltage  
VDC  
Maximum  
Dynamic  
Impedance  
Zz (ohm)  
Test Current  
Type  
Iz  
(mA)  
Minimum  
Maximum  
IRRM  
(µA)  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
VR  
(V)  
7
(V)  
7
DAM1MA10  
DAM1MA11  
DAM1MA12  
DAM1MA13  
DAM1MA15  
DAM1MA16  
DAM1MA18  
DAM1MA20  
DAM1MA22  
DAM1MA24  
DAM1MA27  
DAM1MA30  
DAM1MA33  
DAM1MA36  
DAM1MA39  
DAM1MA43  
DAM1MA47  
DAM1MA51  
DAM1MA68  
DAM1MA75  
DAM1MA82  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32.0  
35.0  
38.6  
41.9  
46.2  
50.7  
55.1  
74.8  
82.5  
90.2  
15  
25  
25  
25  
25  
25  
15  
15  
15  
15  
10  
10  
10  
10  
10  
10  
6
8
10.4  
11.4  
12.4  
13.5  
15.3  
16.8  
18.8  
20.8  
22.7  
25.1  
28.0  
31.0  
33.4  
36.1  
39.8  
43.3  
46.9  
61.2  
67.5  
73.8  
15  
8
9
15  
9
10  
11  
12  
13  
14  
16  
18  
20  
22  
24  
26  
28  
31  
34  
37  
49  
54  
59  
15  
10  
11  
12  
13  
14  
16  
18  
20  
22  
24  
26  
28  
31  
34  
37  
55  
61  
66  
15  
15  
15  
15  
15  
15  
15  
15  
15  
15  
30  
30  
30  
6
30  
6
60  
4
60  
4
5
60  
3
5
PDE-DAM1MA-0  
DAM1MA  
Typical zener characteristics ( Vz:10~51V)  
Typical zener characteristics ( Vz:68~82V)  
1000  
1000  
100  
100  
10  
DAM1MA27  
DAM1MA30  
DAM1MA33  
DAM1MA36  
10  
1
1
0.1  
0.1  
TL=25˚C  
110  
TL=25˚C  
0.01  
0.001  
0.01  
0.001  
0
10  
20  
30  
40  
50  
60  
70  
50  
60  
70  
80  
90  
100  
120  
ZENER VOLTAGE (V)  
ZENER VOLTAGE (V)  
Typical reverse power characteristic  
Transient thermal impedance  
(Rectangular pulse non-repetitive)  
200  
100  
1000  
Rth(j-a)  
Rth(j-L)  
10  
TL=25°C  
100  
Lead temperature  
Soldering land  
1
(
6mm)  
On glass-epoxi  
substrate( 50mm)  
10  
0.01  
0.1  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
TIME (s)  
1
10  
100  
RECTANGULAR PULSE DURATION (ms)  
PDE-DAM1MA-0  
HITACHI POWER SEMICONDUCTORS  
Notices  
1.The information given herein, including the specifications and dimensions, is subject to  
change without prior notice to improve product characteristics. Before ordering,  
purchasers are adviced to contact Hitachi sales department for the latest version of this  
data sheets.  
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure  
before use.  
3.In cases where extremely high reliability is required(such as use in nuclear power control,  
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel  
control equipment and various kinds of safety equipment), safety should be ensured by  
using semiconductor devices that feature assured safety or by means of users’ fail-safe  
precautions or other arrangement. Or consult Hitachi’s sales department staff.  
4.In no event shall Hitachi be liable for any damages that may result from an accident or  
any other cause during operation of the user’s units according to this data sheets. Hitachi  
assumes no responsibility for any intellectual property claims or any other problems that  
may result from applications of information, products or circuits described in this data  
sheets.  
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any  
secondary damage resulting from use at a value exceeding the absolute maximum rating.  
6.No license is granted by this data sheets under any patents or other rights of any third  
party or Hitachi, Ltd.  
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,  
without the expressed written permission of Hitachi, Ltd.  
8.The products (technologies) described in this data sheets are not to be provided to any  
party whose purpose in their application will hinder maintenance of international peace  
and safety not are they to be applied to that purpose by their direct purchasers or any  
third party. When exporting these products (technologies), the necessary procedures are  
to be taken in accordance with related laws and regulations.  
„ For inquiries relating to the products, please contact nearest overseas representatives which is located  
“Inquiry” portion on the top page of a home page.  
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse  

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