DFM1SF2 [RENESAS]
1A, 200V, SILICON, SIGNAL DIODE;
| 型号： | DFM1SF2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 1A, 200V, SILICON, SIGNAL DIODE 二极管 |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST RECOVERY DIODE
DFM1SF
FEATURES
OUTLINE DRAWING
• For high speed switching.
Unit in mm(inch)
• Diffused-junction. Resin encapsulated.
Direction of polarity
φ
0.6
(0.024)
Color of symbol
& cathode band
Type
DFM1SF1 (100V)
DFM1SF2 (200V)
DFM1SF4 (400V)
DFM1SF6 (600V)
Yellow
White
Blue
Red
Weight: 0.20 (g)
ABSOLUTE MAXIMUM RATINGS
DFM1SF1
100
DFM1SF2
200
DFM1SF4
400
DFM1SF6
Items
Type
600
Repetitive Peak Reverse Voltage
VRRM
V
A
Single-phase half sine wave 180° conduction
TL = 50°C, Lead length = 3mm
Average Forward Current
IF(AV)
1.0
(
)
40( Without PIV, 10ms conduction, Tj = 40°C start )
6.4( Time = 2 ~ 10ms, I = RMS value )
-40 ~ +150
Surge(Non-Repetitive) Forward Current
I2t Limit Value
IFSM
I2t
A
A2s
°C
°C
Operating Junction Temperature
Storage Temperature
Tj
Tstg
-40 ~ +150
Notes (1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Symbols
IRRM
Items
Units
Min. Typ. Max.
Test Conditions
20
DFM1SF1,2
Peak Reverse Current
µA
Rated VRRM
10
DFM1SF4,6
IFM=1.0Ap, Single-phase half sine
wave 1 cycle
Peak Forward Voltage
VFM
trr
V
µs
1.3
0.1
Reverse Recovery Time
IF=0.5A, Irp=1.0A, 25%recovery
Lead length = 3 mm
Rth(j-a)
Rth(j-l)
100
70
°C/W
Steady State Thermal Impedance
PDE-DFM1SF-0
DFM1SF
Forward characteristics
Max. average forward power dissipation
(Resistive or inductive load)
100
2.0
Single-phase half sine wave
Conduction : 10ms 1 Cycle
DC
1.6
1.2
0.8
0.4
0
Single-phase
( 50Hz )
10
TL=150˚C
TL=25˚C
1
0.1
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PEAK FORWARD VOLTAGE DROP (V)
AVERAGE FORWARD CURRENT (A)
Max. allowable ambient temperature
(Resistive or inductive load)
Max. allowable lead temperature
(Resistive or inductive load)
180
180
Single-phase half sine wave
Single-phase half sine wave
180˚ conduction (50Hz)
180˚ conduction (50Hz)
160
Lead length
=3mm
160
140
120
100
L
140
120
100
80
PC board
(100×180×1.6t)
Copper foil
(
5.5)
80
Lead length
=3mm
L
60
60
Lead temp
Copper foil
(
5.5)
40
40
20
0
PC board
(100×180×1.6t)
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
AVERAGE FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
Surge forward current characteristic
Transient thermal impedance
(Non-repetitive)
50
0
Surge current
peak value
Rth(j-a)
Rth(j-l)
100
10
10ms
1 cycle
40
30
Without PIV
Lead length
=3mm
20
10
0
L
Lead temp
Copper foil
1.0
0.1
(
5.5)
PC board
(100×180×1.6t)
1
10
CYCLES
100
0.001
0.01
0.1
TIME (s)
10
100
1.0
PDE-DFM1SF-0
DFM1SF
Reverse recovery time(trr) test circuit
10Ω
50Ω
D.U.T
22µs
25V
(approx.)
1Ω
SCOPE
220µs
trr
I
F=0.5A
0
t
0.25 Irp
I
rp=1.0A
PDE-DFM1SF-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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