HGTP2N120BND [RENESAS]
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| 型号： | HGTP2N120BND |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
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HGTP2N120BND, HGT1S2N120BNDS
Data Sheet
January 2000
File Number 4698.2
12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
o
• 12A, 1200V, T = 25 C
C
The HGTP2N120BND and HGT1S2N120BNDS are
• 1200V Switching SOA Capability
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type TA49056.
o
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
Formerly Developmental Type TA49310.
E
Ordering Information
C
COLLECTOR
G
(FLANGE)
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
2N120BND
2N120BND
HGTP2N120BND
HGT1S2N120BNDS
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.
JEDEC TO-263AB
Symbol
C
COLLECTOR
(FLANGE)
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1
HGTP2N120BND, HGT1S2N120BNDS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTP2N120BND
HGT1S2N120BNDS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
12
5.6
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
12A at 1200V
104
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
300
260
8
C
L
o
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
µs
µs
GE
GE
SC
SC
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
15
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 840V, T = 125 C, R = 51Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
1200
-
-
CES
C
GE
o
I
V
= BV
CES
T
= 25 C
-
-
250
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
50
-
o
= 150 C
-
0.6
2.7
4.2
-
o
Collector to Emitter Saturation Voltage
V
I
V
= 2.3A,
C
= 25 C
-
2.45
3.6
6.8
-
CE(SAT)
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 40µA, V = V
CE GE
6.0
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T = 150 C, R = 51Ω, V
= 15V,
12
-
J
G
GE
L = 400µH, V
= 1200V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 2.3A, V
= 10A,
= 0.5 BV
CE CES
-
-
-
-
-
-
-
-
-
10.2
24
-
V
GEP
C
C
Q
V
= 15V
30
nC
nC
ns
ns
ns
ns
µJ
µJ
G(ON)
GE
V
= 0.5 BV
CES
CE
V
= 20V
o
32
39
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
I
V
V
21
25
d(ON)I
J
= 2.3A
CE
t
11
15
rI
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
185
100
370
195
240
130
500
270
d(OFF)I
R
= 51Ω
G
t
fI
L = 5mH
Test Circuit (Figure 20)
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
E
OFF
2
HGTP2N120BND, HGT1S2N120BNDS
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
25
11
195
160
725
280
-
MAX
30
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 2.3A
CE
t
15
ns
rI
d(OFF)I
V
= 0.8 BV
= 15V
CE
CES
V
Current Turn-Off Delay Time
Current Fall Time
t
GE
260
200
1000
380
3.2
ns
R
= 51Ω
G
t
ns
fI
L = 5mH
Test Circuit (Figure 20)
Turn-On Energy
E
µJ
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
µJ
OFF
V
I
I
I
= 2.3A
V
EC
EC
EC
EC
t
= 2.3A, dl /dt = 200A/µs
EC
52
38
-
60
ns
rr
= 1A, dl /dt = 200A/µs
EC
44
ns
o
Thermal Resistance Junction To Case
NOTE:
R
IGBT
1.20
2.5
C/W
θJC
o
Diode
-
C/W
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
12
10
8
14
12
10
8
o
T
= 150 C, R = 51Ω, V = 15V, L = 1mH
GE
J
G
V
= 15V
GE
6
6
4
4
2
2
0
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
25
20
15
40
35
30
o
T
= 150 C, R = 51Ω, L = 5mH, V
= 960V
CE
o
J
G
V
= 840V, R = 51Ω, T = 125 C
CE
G
J
o
T
= 75 C, V = 15V, IDEAL DIODE
C
GE
t
SC
100
50
I
SC
T
V
C
GE
15V
75 C 12V
o
75 C
o
f
= 0.05 / (t
d(OFF)I
+ t )
d(ON)I
MAX1
10
5
25
20
f
= (P - P ) / (E
+ E )
MAX2
D
C
ON
OFF
T
V
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
C
GE
C
o
15V
12V
110 C
110 C
o
o
R
= 1.2 C/W, SEE NOTES
ØJC
10
12
13
14
15
0.5
1.0
2.0
5.0
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
10
8
10
o
T
= -55 C
C
8
o
T
= 25 C
C
o
= 25 C
T
C
6
6
4
2
0
o
T
= -55 C
C
o
T
= 150 C
C
4
o
T
= 150 C
C
2
DUTY CYCLE < 0.5%, V
= 15V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 12V
PULSE DURATION = 250µs
GE
GE
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
2.0
400
R
T
= 51Ω, L = 5mH, V
= 960V
CE
G
R
= 51Ω, L = 5mH, V
= 960V
G
CE
350
300
250
200
150
1.5
1.0
o
o
= 150 C, V
= 12V OR 15V
T
= 150 C, V
= 12V, V = 15V
GE
J
GE
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
J
0.5
0
100
50
0
o
T
2
= 25 C, V
= 12V, V = 15V
GE
J
GE
0
1
2
3
4
5
0
1
3
4
5
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
45
40
35
30
25
20
15
40
35
30
25
R
= 51Ω, L = 5mH, V = 960V
CE
R
= 51Ω, L = 5mH, V
= 960V
CE
G
G
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
J
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
J
20
15
10
5
o
o
T
2
= 25 C OR T = 150 C, V
= 15V
J
J
GE
o
o
T
= 25 C, T = 150 C, V = 15V
GE
J
J
0
0
1
4
5
3
2
0
1
3
4
5
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
400
R
= 51Ω, L = 5mH, V
= 960V
CE
R
= 51Ω, L = 5mH, V
= 960V
CE
G
G
400
350
300
250
200
350
300
250
200
150
100
50
o
V
= 12V, V
GE
= 15V, T = 150 C
J
GE
o
= 150 C, V
T
= 12V OR 15V
GE
J
150
100
o
o
= 15V, T = 25 C
T
= 25 C, V
= 12V OR 15V
2
V
= 12V, V
1
J
GE
GE
GE
J
0
1
3
4
5
3
0
2
4
5
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
30
o
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 20V
I
= 1mA, R = 260Ω, T = 25 C
CE
G (REF)
L
C
25
20
15
10
15
10
5
V
= 1200V
CE
V
= 800V
V
= 400V
CE
CE
o
T
= 25 C
C
5
0
o
T
= 150 C
C
o
T
= -55 C
C
0
7
8
9
10
11
12
13
14
15
0
5
10
15
Q , GATE CHARGE (nC)
G
20
25
35
30
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
0.8
0.6
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, T = 110 C
C
PULSE DURATION = 250µs
C
IES
V
= 15V
GE
V
= 10V
GE
C
OES
0.2
0
C
RES
0
5
10
15
20
25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
10
0.5
0.2
0.1
t
1
-1
10
P
0.05
0.02
D
t
2
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Z
θJC
X R
) + T
J
D
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
-2
10
-1
0
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
70
o
= 25 C, dI
T
/ dt = 200A/µs
EC
C
10
60
50
40
30
20
10
t
rr
o
150 C
t
a
1
t
b
o
25 C
o
-55 C
0.1
0.5
1.5
2.0
2.5
1.0
0
1
2
3
4
5
V , FORWARD VOLTAGE (V)
I , FORWARD CURRENT (A)
F
F
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
6
HGTP2N120BND, HGT1S2N120BNDS
Test Circuit and Waveforms
HGTP2N120BND
90%
OFF
10%
ON
V
GE
E
E
V
CE
L = 5mH
90%
R
= 51Ω
G
10%
d(OFF)I
+
I
CE
t
t
V
= 960V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions are taken:
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
and t
are defined in Figure 21.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
JM d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
4. Devices should never be inserted into or removed from
circuits with power on.
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V
. Exceeding the rated V can result in
D
GEM
GE
permanent damage to the oxide layer in the gate region.
the conduction losses (P ) are approximated by
C
P
E
= (V
x I )/2.
CE
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
C
CE
and E
are defined in the switching waveforms
OFF
ON
shown in Figure 21. E
power loss (I
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
x V ) during
integral of the instantaneous power loss (I
CE
turn-off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate pro-
tection is required an external Zener is recommended.
E
OFF
CE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
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ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
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相关型号：
HGTP2N120CN_NL
Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
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