HITK0202MP [RENESAS]
Silicon N Channel MOS FET Power Switching; 硅N沟道MOS FET电源开关型号: | HITK0202MP |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon N Channel MOS FET Power Switching |
文件: | 总7页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
HITK0202MP
Silicon N Channel MOS FET
Power Switching
R07DS0480EJ0100
Rev.1.00
Jun 22, 2011
Features
Low on-resistance
DS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A)
R
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
G
1. Source
2. Gate
2
3. Drain
1
2
S
1
Note: Marking is “RG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
V
20
12
V
3.8
A
Note1
Drain peak current
ID(pulse)
12
A
Body - drain diode reverse drain current
Channel dissipation
IDR
3.8
A
Pch Note2
Tch
0.8
W
C
C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
HITK0202MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
20
12
—
—
0.4
—
—
6
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage V(BR)DSS
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 1.9 A, VGS = 4.5 VNote3
ID = 1.9 A, VGS = 2.5 VNote3
ID = 1.9 A, VDS = 10 VNote3
VDS = 10 V
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
—
—
V
—
10
1
A
A
V
Drain to source leak current
IDSS
—
Gate to source cutoff voltage
Drain to source on state resistance
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
1.4
55
85
—
42
62
8.5
293
74
37
13
88
35
7
m
m
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
GS = 0
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
—
—
—
ID = 1.9 A
GS = 4.5 V
RL = 5.2
Rg = 4.7
V
—
Turn - off delay time
Fall time
td(off)
tf
—
—
Total gate charge
Qg
3.7
0.5
0.8
0.85
—
VDD = 10 V
GS = 4.5 V
ID = 3.8 A
IF = 3.8 A, VGS = 0 Note3
V
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Qgs
Qgd
VDF
—
—
1.1
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 2 of 6
HITK0202MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
100
10
1
Operation in this area
is limited by RDS(on)
μs
100
0.8
0.6
0.4
0.2
0
1
0.1
0.01
Ta = 25°C
1 Shot Pulse
0
50
100
150
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Typical Output Characteristics
Typical Transfer Characteristics (1)
10 V
5 V
12
12
3.0 V
2.8 V
VDS = 10 V
Pulse Test
2.2 V
10
10
8
2.6 V
Pulse Test
Tc = 25°C
2.4 V
2.0 V
1.8 V
8
6
6
4
2
0
1.6 V
1.4 V
= 0 V
4
2
0
Tc = 75°C
25°C
V
GS
–25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Typical Transfer Characteristics (2)
1
1.6
VDS = 10 V
Pulse Test
VDS = 10 V
Pulse Test
0.1
1.2
0.8
0.4
0
ID = 10 mA
Tc = 75°C
0.01
25°C
1 mA
0.001
0.1 mA
–25°C
0.0001
–25
0
25 50 75 100 125 150
0
0.5
1
1.5
2
Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 3 of 6
HITK0202MP
Preliminary
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
100
10
400
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
300
200
100
V
GS = 2.5 V
3.8 A
4.5 V
10 V
1.9 A
1 A
0.5 A
0
0
2
4
6
8
10
0.1
1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
100
70
Pulse Test
V
GS = 4.5 V
90
ID = 3.8 A
ID = 3.8 A
60
50
40
80
1.9 A
1 A
1.9 A
70
60
0.5 A
1 A
50
30
20
0.5 A
40
30
Pulse Test
VGS .5 V
=
2
–25
0
25 50 75 100 125 150
–25
0
25 50 75 100 125 150
Case Temperature Tc ( C)
°
Case Temperature Tc ( C)
°
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
10000
100
10
1
Pulse Test
Pulse Test
V
V
GS = 0 V
DS = 20 V
V
DS = 10 V
–25°C
1000
100
10
25°C
Tc = 75°C
1
0.1
–25
0.1
0.01
0
25 50 75 100 125 150
0.1
1
10
100
Drain Current ID (A)
Case Temperature Tc (°C)
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 4 of 6
HITK0202MP
Preliminary
Switching Characteristics
Dynamic Input Characteristics
VGS
40
30
20
10
0
16
12
8
1000
100
VDD = 10 V
GS = 4.5 V
Rg = 4.7 Ω
= 5 μs
t
r
V
P
W
Tc = 25°C
t
d(off)
VDD = 20 V
5 V
10 V
t
d(on)
10 V
VDD = 20 V
10
1
5 V
t
f
4
ID
= 3.8 A
Tc = 25°C
VDS
0
10
0.1
1
10
100
0
2
4
6
8
Drain Current ID (A)
Gate Charge Qg (nc)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
600
550
500
450
400
1000
Ciss
100
Coss
Crss
VDS = 0 V
f = 1 MHz
VGS = 0 V
f = 1 MHz
350
–
10
0
10
–8
–6
–4
–
2
0
2
4
6
8
10
5
10
15
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
12
0.6
Pulse Test
VGS = 0
Tc = 25°C
10 V
0.5
5 V
8
0.4
0.3
ID = 10 mA
4
0
–5, –10 V
VGS = 0 V
1 mA
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Case Temperature Tc (°C)
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 5 of 6
HITK0202MP
Preliminary
Package Dimensions
Package Name
MPAK
JEITA Package Code
SC-59A
RENESAS Code
PLSP0003ZB-A
Previous Code
MASS[Typ.]
0.011g
MPAK(T) / MPAK(T)V
D
A
Q
c
e
E
HE
L
LP
L
1
A
A
A3
b
Dimension in Millimeters
Min Nom Max
Reference
Symbol
x
S
A
M
e
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
1.0
0
1.0
1.3
0.1
1.2
1.1
0.25
0.4
A
2
1
A
0.35
0.1
2.7
0.5
0.16 0.26
3.1
e1
1.35
1.5
0.95
2.8
1.65
A
S
2.2
3.0
b
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.55
I1
c
1.95
0.3
b
2
1.05
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Orderable Part Number
Quantity
Shipping Container
178 mm reel, 8 mm Emboss taping
HITK0202MPTL-HQ
3000 pcs.
Note: This product is designed for consumer use and not for automotive.
R07DS0480EJ0100 Rev.1.00
Jun 22, 2011
Page 6 of 6
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