IQE022N06LM5CG
IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the new PQFN 3.3x3.3 Center-Gate package, IQE022N06LM5CG is targeted for high power density and performance SMPS products commonly found in telecom and data servers.
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INFINEON
10-PY12PMA025M7-P588A78Y
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
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VINCOTECH
