NTNS5K0P021ZTCG [ONSEMI]
MOSFET，P 沟道，-20V，5 Ω，XDFN3;
| 型号： | NTNS5K0P021ZTCG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，P 沟道，-20V，5 Ω，XDFN3 |
| 文件： | 总6页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTNS5K0P021Z
MOSFET – Single
P-Channel, Small Signal,
XDFN3,
0.62 x 0.42 x 0.4 mm
www.onsemi.com
-20 V, -127 mA
Features
V
R
MAX
I Max
D
(BR)DSS
DS(on)
• Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm)
for Extremely Space−Constrained Applications
• −1.5 V Gate Drive
5.0 W @ −4.5 V
5.5 W @ −3.3 V
−20 V
6.0 W @ −2.5 V
−127 mA
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
7.0 W @ −1.8 V
10 W @ −1.5 V
Compliant
Applications
• Small Signal Load Switch
• High Speed Interfacing
• Level Shift
P−CHANNEL MOSFET
D (3)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
20
Unit
V
G (2)
V
DSS
V
GS
8
V
Continuous Drain
Current (Note 1)
Steady
T = 25°C
I
−127
−91
−146
125
mA
A
D
State
T = 85°C
A
t ≤ 5 s
T = 25°C
A
S (1)
Power Dissipation
(Note 1)
Steady
State
T = 25°C
A
P
mW
D
t ≤ 5 s
166
MARKING DIAGRAM
Pulsed Drain
Current
t = 10 ms
p
I
−488
mA
DM
1
FM
Operating Junction and Storage
Temperature
T , T
−55 to
150
°C
J
STG
XDFN3
CASE 711BH
Source Current (Body Diode) (Note 2)
I
200
260
mA
S
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
°C
L
F
M
= Specific Device Code
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2
or 2 mm , 1 oz Cu.
†
Package
Device
NTNS5K0P021ZTCG
Shipping
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
XDFN3
8000 / Tape &
Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2019 − Rev. 0
NTNS5K0P021Z/D
NTNS5K0P021Z
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
998
751
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
θJA
°C/W
R
θJA
2
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
V
= 0 V, I = −250 mA
−20
V
(BR)DSS
GS
D
I
I
V
= 0 V, V = −5 V
T = 25°C
J
−50
−100
100
nA
nA
nA
DSS
DSS
GSS
GS
DS
V
GS
= 0 V, V = −16 V
T = 25°C
J
DS
I
V
= 0 V, V
= 5 V
DS
GS
V
V
GS
= V , I = −250 mA
−0.4
−1.0
5.0
5.5
6.0
7.0
10
V
GS(TH)
DS
D
V
V
= −4.5 V, I = −100 mA
2.1
2.4
GS
GS
D
= −3.3 V, I = −100 mA
D
V
= −2.5 V, I = −50 mA
2.7
Drain−to−Source On Resistance
R
W
GS
GS
D
DS(on)
V
= −1.8 V, I = −20 mA
3.6
D
V
= −1.5 V, I = −10 mA
4.2
GS
DS
D
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
Input Capacitance
g
FS
V
= −5 V, I = −125 mA
0.35
−0.6
S
V
D
V
SD
V
= 0 V, I = −10 mA
−1.0
GS
S
C
12.8
2.8
ISS
Output Capacitance
C
V
GS
= 0 V, freq = 1 MHz, V = −15 V
pF
ns
OSS
RSS
DS
Reverse Transfer Capacitance
C
2.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
t
37
71
d(ON)
t
r
V
= −4.5 V, V = −15 V,
DD
GS
I
D
= 200 mA, R = 2 W
G
Turn−Off Delay Time
Fall Time
t
280
171
d(OFF)
t
f
4. Switching characteristics are independent of operating junction temperatures.
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2
NTNS5K0P021Z
TYPICAL CHARACTERISTICS
0.25
0.20
0.15
0.10
0.25
V
GS
= −2 V to −5 V
V
DS
= −5 V
−1.8 V
0.20
−1.6 V
0.15
−1.4 V
0.10
T = 25°C
J
−1.2 V
0.05
0
0.05
T = −55°C
J
T = 125°C
J
0
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
5.0
4.5
4.0
3.5
3.0
2.5
T = 25°C
J
T = 25°C
D
J
V
= −1.5 V
= −1.8 V
GS
I
= −0.12 A
V
V
GS
V
GS
= −3.3 V
= −2.5 V
= −4.5 V
GS
GS
V
2.0
1.5
1.5
1.0
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1000
100
10
T = 150°C
J
V
I
= −4.5 V
= −0.1 A
GS
T = 125°C
J
D
T = 85°C
J
1
0.1
T = 25°C
J
0.7
0.6
−50 −25
0.01
0
25
50
75
100
125 150
0
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTNS5K0P021Z
TYPICAL CHARACTERISTICS
100
1000
V
V
= −4.5 V
= −15 V
= −0.2 A
GS
V
= 0 V
GS
DS
T = 25°C
J
I
D
t
d(off)
f = 1 MHz
t
f
C
ISS
100
10
10
t
r
C
OSS
t
d(on)
C
RSS
1
0
5
10
15
20
1
10
R , GATE RESISTANCE (W)
100
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
G
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
0.010
0.009
0.008
0.007
0.006
0.005
0.004
1
V
GS
= 0 V
V
≤ −4.5 V
GS
Single Pulse
= 25°C
10 ms
T
C
0.1
100 ms
T = 125°C
J
1 ms
10 ms
T = 25°C
J
0.01
dc
R
Limit
DS(on)
Thermal Limit
Package Limit
0.003
0.002
T = −55°C
J
0.001
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
1000
Duty Cycle = 0.5
0.2
0.1
100
0.05
0.02
0.01
10
1
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
100
1000
Figure 11. Thermal Response
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN3 0.42x0.62, 0.3P
CASE 711BH
ISSUE A
DATE 29 APR 2018
SCALE 8:1
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Date Code
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON64946G
XDFN3 0.42x0.62, 0.3P
PAGE 1 OF 1
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