HRW0703A [RENESAS]

Silicon Schottky Barrier Diode for Rectifying; 硅肖特基二极管整流
HRW0703A
型号: HRW0703A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Schottky Barrier Diode for Rectifying
硅肖特基二极管整流

肖特基二极管
文件: 总6页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HRW0703A  
Silicon Schottky Barrier Diode for Rectifying  
REJ03G0160-0600Z  
(Previous: ADE-208-110E)  
Rev.6.00  
Jan.06.2004  
Features  
Low forward voltage drop and suitable for high efficiency rectifying.  
MPAK Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HRW0703A  
S8  
MPAK  
Pin Arrangement  
3
1. NC  
2. Anode  
2
1
(Top View)  
3. Cathode  
Rev.6.00, Jan.06.2004, page 1 of 5  
HRW0703A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
V
1
Repetitive peak reverse voltage  
Forward current  
VRRM  
IF *1  
IFSM  
Tj  
*
30  
700  
mA  
A
2
Non-Repetitive peak forward surge current  
Junction temperature  
Storage temperature  
*
5
125  
°C  
°C  
Tstg  
–55 to +125  
Notes: 1. See from Fig.4 to Fig.7.  
2. 50 Hz sine wave 1 pulse  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
Typ Max Unit  
Test Condition  
IF = 700 mA  
Forward voltage  
Reverse current  
Capacitance  
VF  
IR  
0.5  
100  
V
µA  
pF  
VR = 30 V  
C
150  
390  
290  
VR = 0 V, f = 1 MHz  
Thermal resistance Rth1(j-a)  
Rth2(j-a)  
°C/W Polyimide board *1  
°C/W Ceramic board *2  
Notes: 1. Polyimide board  
20h×15w×0.8t  
1.5  
Unit: mm  
1.5  
2. Ceramic board  
20h×15w×0.65t  
4.2  
2.0  
Unit: mm  
Rev.6.00, Jan.06.2004, page 2 of 5  
HRW0703A  
Main Characteristic  
10–1  
10–2  
10–3  
10–4  
10–5  
10–6  
10  
Pulse test  
Pulse test  
1.0  
Ta = 75°C  
Ta = 75°C  
Ta = 25°C  
Ta = 25°C  
10–1  
10–2  
0
10  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
20  
30  
40  
50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
100  
f = 1MHz  
Pulse test  
10  
1.0  
1.0  
10  
40  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.6.00, Jan.06.2004, page 3 of 5  
HRW0703A  
1.6  
1.2  
0.8  
0.4  
0
0.80  
0V  
D=1/6  
D=5/6  
D=2/3  
0A  
t
t
t
D = —  
T
t
T
T
T
D = —  
0.60  
Tj = 25°C  
D=1/3  
D=1/2  
Tj = 125°C  
DC  
0.40  
0.20  
0
D=1/2  
sin(θ=180°)  
sin(θ=180°)  
0
5
10 15 20 25 30  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Forward current IF (A)  
Reverse voltage VR (V)  
Fig.4 Forward power dissipation vs. Forward current  
Fig.5 Reverse power dissipation vs. Reverse voltage  
0.80  
0.80  
VR=VRRM/2  
VR=VRRM/2  
DC  
Tj =125°C  
Tj =125°C  
Polyimide board  
Ceramic board  
0.60  
DC  
0.60  
0.40  
0.20  
0
sin(θ=180°)  
0.40  
sin(θ=180°)  
D=1/2  
D=1/3  
0.20  
D=1/2  
D=1/6  
0
D=1/6  
D=1/3  
0
25  
0
25 50 75 100 125  
25  
25 50 75 100 125  
°C  
Ambient temperature Ta  
(
)
Ambient temperature Ta  
(°C)  
Fig.6 Average rectified current vs. Ambient temperature  
Fig.7 Average rectified current vs. Ambient temperature  
Rev.6.00, Jan.06.2004, page 4 of 5  
HRW0703A  
Package Dimensions  
As of January, 2003  
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3–0.4  
0 – 0.1  
(0.95) (0.95)  
1.9 ± 0.2  
+ 0.3  
– 0.1  
2.8  
Package Code  
JEDEC  
MPAK  
JEITA  
Mass (reference value)  
Conforms  
0.011 g  
Rev.6.00, Jan.06.2004, page 5 of 5  
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