HS2-117RH-8S9000 [RENESAS]
ADJUSTABLE POSITIVE REGULATOR;
| 型号： | HS2-117RH-8S9000 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | ADJUSTABLE POSITIVE REGULATOR 输出元件 调节器 |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Radiation Hardened Adjustable Positive Voltage
Regulator
HS-117RH, HS-117EH
Features
The Radiation Hardened HS-117RH, HS-117EH are adjustable
positive voltage linear regulator capable of operating with
input voltages up to 40VDC. The output voltage is adjustable
from 1.2V to 37V with two external resistors. The device is
• Electrically Screened to DLA SMD # 5962-99547
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- 300 krad (Si) (Max)
- Latch-up Immune
capable of sourcing from 5mA to 1.25A
(0.5 A for
PEAK
PEAK
the TO-39 package). Protection is provided by the on-chip
thermal shutdown and output current limiting circuitry.
• Superior Temperature Stability
The Intersil HS-117RH, HS-117EH has advantages over other
industry standard types, in that circuitry is incorporated to
minimize the effects of radiation and temperature on device
stability.
• Overcurrent and Overtemperature Protection
Applications
• Adjustable Linear Voltage Regulators
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, the HS-117RH, HS-117EH are
immune to single event latch-up and has been specifically
designed to provide highly reliable performance in harsh
radiation environments.
• Adjustable Linear Current Regulator
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency (DLA). The SMD numbers listed here
must be used when ordering.
Detailed electrical specifications for the HS-117RH, HS-117EH
are contained in SMD 5962-99547. A “hot-link” is provided on
our website for downloading.
Pin Configurations
HS2-117RH
(TO-39 CAN)
BOTTOM VIEW
HSYE-117RH
(SMD.5 CLCC)
BOTTOM VIEW
ADJUST
2
2
1 - ADJUST
2 - IN
OUT
3
IN
1
3
3 - OUT
1
HS9S-117RH
(TO-257AA FLANGE MOUNT)
TOP VIEW
NOTE: No current JEDEC outline for the SMD.5 package. Refer to SMD
for package dimensions. The TO-257 is a totally isolated metal package
IN
3
2
1
OUT
ADJUST
September 4, 2012
FN4560.9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2003, 2007, 2011, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
1
All other trademarks mentioned are the property of their respective owners.
HS-117RH, HS-117EH
Ordering Information
ORDERING
INTERNAL
MKT. NUMBER
TEMP. RANGE
(°C)
NUMBER
5962F9954702VUC
5962F9954702V9A
5962F9954702VXC
5962F9954702VYC
5962F9954701VUC
5962F9954701QUC
5962F9954701VXC
5962F9954701QXC
5962F9954701VYC
5962F9954701QYC
HS2-117RH/Proto
HS9S-117RH/Proto
HSYE-117RH/Proto
5962F9954701QUC
5962F9954701VXC
5962F9954701VYC
5962F9954701VYC
NOTE:
PACKAGE
3 LD METAL CAN
PKG DWG. #
T3.C
HS2-117EH-Q
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
HS0-117EH-Q
DIE
HS9S-117EH-Q
3 LD TO-257
3 PAD LCC
T3.D
J3.A
T3.C
T3.C
T3.D
T3.D
J3.A
J3.A
T3.C
T3.D
HSYE-117EH-Q
HS2-117RH-Q
3 LD METAL CAN
3 LD METAL CAN
3 LD TO-257
3 LD TO-257
3 PAD LCC
HS2-117RH-8
HS9S-117RH-Q
HS9S-117RH-8
HSYE-117RH-Q
HSYE-117RH-8
3 PAD LCC
HS2-117RH/Proto
HS9S-117RH/Proto
HSYE-117RH/Proto
HS2-117RH-8S9000
HS9S-117RH-QS9000
HSYE-117RH-QS9000
HSYE-117RH-QS9002
3 LD TO-257
3 LD TO-257
3 PAD LCC
3 LD METAL CAN
3 LD TO-257
3 PAD LCC
T3.C
T3.D
J3.A
J3.A
3 PAD LCC
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
FN4560.9
September 4, 2012
2
HS-117RH, HS-117EH
Substrate
Die Characteristics
DIE DIMENSIONS
Radiation Hardened Silicon Gate,
Dielectric Isolation
2616mm x 2794mm (103 mils x 110 mils)
483mm ±25.4mm (19 mils ±1 mil)
Backside Finish
Gold
INTERFACE MATERIALS
Glassivation
ASSEMBLY RELATED INFORMATION
Substrate Potential
Type: Silox (SiO )
Thickness: 8.0kÅ2±1.0kÅ
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
Top Metallization
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
5
2
<2.0 x 10 A/cm
Transistor Count
95
Metallization Mask Layout
HS-117RH, HS-117EH
V
V
IN
IN
V
V
OUT
OUT
ADJ
V
OUTK
For additional products, see www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4560.9
September 4, 2012
3
相关型号：
HS2-2620RH-Q
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers
INTERSIL
HS2-2622RH-Q
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers
INTERSIL
©2020 ICPDF网 联系我们和版权申明