HSB2836 [RENESAS]

Silicon Epitaxial Planar Diode for High Speed Switching; 硅外延平面二极管,高速开关
HSB2836
型号: HSB2836
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Planar Diode for High Speed Switching
硅外延平面二极管,高速开关

整流二极管 开关 光电二极管
文件: 总5页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HSB2836  
Silicon Epitaxial Planar Diode for High Speed Switching  
REJ03G0548-0200  
(Previous: ADE-208-485A)  
Rev.2.00  
Mar 04, 2005  
Features  
Fast recovery time.  
CMPAK package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Package Code  
Type No.  
Laser Mark  
Package Name  
(Previous Code)  
HSB2836  
A4  
CMPAK  
PTSP0003ZB-A  
(CMPAK)  
Pin Arrangement  
3
1. Cathode  
2. Cathode  
3. Anode  
2
1
(Top View)  
Rev.2.00 Mar 04, 2005 page 1 of 4  
HSB2836  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Peak reverse voltage  
Symbol  
Value  
Unit  
VRM  
VR  
85  
V
V
Reverse voltage  
80  
1
Peak forward current  
IFM  
*
300  
mA  
A
2
Non-Repetitive peak forward surge current  
Average rectified current  
Junction temperature  
IFSM  
*
4
100  
1
IO  
Tj  
*
mA  
°C  
°C  
125  
Storage temperature  
Tstg  
55 to +125  
Notes: 1. Two device total.  
2. Value at duration of 1 µs, two device total.  
Electrical Characteristics *  
(Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
1.0  
Unit  
Test Condition  
IF = 10 mA  
IF = 50 mA  
Forward voltage  
VF1  
VF2  
VF3  
IR  
V
1.0  
1.2  
IF = 100 mA  
Reverse current  
0.1  
µA  
pF  
ns  
VR = 80 V  
Capacitance  
C
4.0  
VR = 0 V, f = 1 MHz  
IF = 10 mA, VR = 6 V, RL= 50 Ω  
Reverse recovery time  
Note: Per one device.  
trr  
20.0  
Rev.2.00 Mar 04, 2005 page 2 of 4  
HSB2836  
Main Characteristic  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
10-9  
10-10  
10-6  
10-7  
10-8  
10-9  
10-10  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
0
20  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
40  
60  
80  
100  
f=1MHz  
10  
1.0  
0.1  
1.0  
10  
100  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.2.00 Mar 04, 2005 page 3 of 4  
HSB2836  
Package Dimensions  
JEITA Package Code  
SC-70  
RENESAS Code  
Previous Code  
MASS[Typ.]  
0.006g  
PTSP0003ZB-A  
CMPAK / CMPAKV  
D
e
Q
c
H
E
E
L
A
A
b
e
Reference  
Symbol  
Dimension in Millimeters  
Min  
0.8  
0
0.8  
0.25  
0.1  
1.8  
1.15  
-
1.8  
-
-
-
-
Nom Max  
A
2
A
A
-
-
1.1  
0.1  
1.0  
0.4  
A
1
A
2
0.9  
0.3  
A
1
b
c
D
E
e
0.16 0.26  
2.0 2.2  
1.25 1.35  
e
1
b
0.65  
2.1  
0.425  
-
1.5  
-
-
2.4  
-
0.45  
-
l
1
H
E
c
L
b
2
b
2
e
1
A — A Section  
l
0.9  
-
1
Pattern of terminal position areas  
Q
-
0.2  
Rev.2.00 Mar 04, 2005 page 4 of 4  
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 2.0  

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