HVB350BYP [RENESAS]
Silicon Epitaxial Planar Variable Capacitance Diode for VCO; 硅外延平面变容二极管的VCO型号: | HVB350BYP |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon Epitaxial Planar Variable Capacitance Diode for VCO |
文件: | 总5页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVB350BYP
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
REJ03G0487-0100
(Previous: ADE-208-1420)
Rev.1.00
Jan 11, 2005
Features
•
•
•
•
High capacitance ratio. (n = 2.8 min)
Low series resistance. (rs = 0.5 max)
Good C-V linearity.
CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVB350BYP
Laser Mark
Package Code
V1
CMPAK-4
Pin Arrangement
4
1
3
2
4
3
2
V1
1
1. Anode
2. Anode
3. Cathode
4. Cathode
(Top View)
(Top View)
Rev.1.00 Jan 11, 2005 page 1 of 4
HVB350BYP
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
Item
Symbol
Value
15
Reverse voltage
VR
Junction temperature
Storage temperature
Tj
Tstg
125
−55 to +125
°C
°C
Electrical Characteristics
(Ta = 25°C)
Test Condition
Item
Symbol
IR1
Min
—
Typ
—
Max
10
Unit
nA
Reverse current
VR = 15 V
IR2
C1
C4
n
—
—
—
—
—
100
17.0
6.0
—
VR = 15 V, Ta = 60°C
Capacitance
15.5
5.0
2.8
—
pF
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
Capacitance ratio
Series resistance
—
Ω
rs
—
0.5
VR = 1 V, f = 470 MHz
Note: 1. Per one device.
Rev.1.00 Jan 11, 2005 page 2 of 4
HVB350BYP
Main Characteristic
10-6
30
25
20
15
10
5
f=1MHz
10-7
10-8
10-9
10-10
10-11
10-12
10-13
0
0.1
0
4
8
12
16
20
1.0
Reverse voltage VR (V)
10
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Fig.2 Capacitance vs. Reverse voltage
0
-0.5
-1.0
-1.5
0.5
f=470MHz
0.4
0.3
0.2
0.1
0
0.5 1.0
10
30
0.1
1.0
10
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Fig.4 LF vs. Reverse voltage
Rev.1.00 Jan 11, 2005 page 3 of 4
HVB350BYP
Package Dimensions
As of January, 2003
Unit: mm
2.0 ± 0.2
1.3 ± 0.2
(0.65) (0.65)
+ 0.1
0.3 ± 0.05
0.3 ± 0.05
0.3 ± 0.05
0.16
– 0.06
0 – 0.1
0.3 ± 0.05
(0.65) (0.65)
1.3 ± 0.2
Package Code
JEDEC
CMPAK-4
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.1.00 Jan 11, 2005 page 4 of 4
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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