HVC133A [RENESAS]
Silicon Epitaxial Planar Pin Diode for Antenna Switching; 硅外延平面PIN二极管的天线切换型号: | HVC133A |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon Epitaxial Planar Pin Diode for Antenna Switching |
文件: | 总5页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVC133A
Silicon Epitaxial Planar Pin Diode for
Antenna Switching
REJ03G0170-0100Z
Rev.1.00
Jan.21.2004
Features
•
•
•
•
An optimal solution for antenna switching in mobile phones.
Low capacitance.(C1 = 1.0 pF max)
Low forward resistance. (rf = 0.7 Ω max)
Ultra small Flat Package (UFP) is suitable for surface moun
Ordering Information
Type No.
Laser Mark
e Code
P
HVC133A
T9
Pin Arrangement
2
1. Cathode
2. Anode
Rev.1.00, Jan.21.2004, page 1 of 4
HVC133A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VR
Value
30
Unit
V
Reverse voltage
Power dissipation
Junction temperature
Storage temperature
Pd
150
mW
°C
Tj
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Reverse voltage
Reverse current
Forward voltage
Capacitance
VR
IR
30
—
—
—
—
—
—
—
—
—
—
V
100
0.
VF
C1
C6
1 MHz
, f = 1 MHz
2 mA, f = 100 MHz
Forward resistance rf
Rev.1.00, Jan.21.2004, page 2 of 4
HVC133A
Main Characteristic
10–2
10–4
10–6
10–8
10–10
10–11
10–12
10–13
Ta= 75°C
Ta= 50°C
Ta= 75°C
a= 25°C
Ta= 50°C
Ta= 25°C
10–10
10–12
0
0.2
0.4
0.6
0.8
1.0
rse voltage VR (V)
verse current vs. Reverse voltage
15
20
25
30
Forward voltage VF (V)
Fig.1 Forward current vs. Forward volta
f = 100MHz
10
10
1.0
0.1
1.0
0.1
0.1
0.1
1.0
10
1.0
10
Forward current IF (mA)
Reverse voltage VR (V)
Fig.4 Forward resistance vs. Forward current
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Jan.21.2004, page 3 of 4
HVC133A
Package Dimensions
As of January, 2003
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
de
UFP
—
(reference value)
Conforms
0.0016 g
Rev.1.00, Jan.21.2004, page 4 of 4
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliaut there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measuplacement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesst suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other riogy Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any e of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these m
3. All information contained in these materials, including product data, diagrams, charts, pron on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. ts or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an autt distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typograph
Renesas Technology Corp. assumes no responsibility for any damage, liabilityes or errors.
Please also pay attention to information published by Renesas Technology esas Technology Corp. Semiconductor
home page (http://www.renesas.com).
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is potentially at stake. Please contact Renesas Technology Corporp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apcular, medical, aerospace, nuclear, or undersea repeater
use.
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cannot be imported into a country other than the appr
Any diversion or reexport contrary to the export conhe country of destination is prohibited.
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