HVC133A [RENESAS]

Silicon Epitaxial Planar Pin Diode for Antenna Switching; 硅外延平面PIN二极管的天线切换
HVC133A
型号: HVC133A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Planar Pin Diode for Antenna Switching
硅外延平面PIN二极管的天线切换

二极管
文件: 总5页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVC133A  
Silicon Epitaxial Planar Pin Diode for  
Antenna Switching  
REJ03G0170-0100Z  
Rev.1.00  
Jan.21.2004  
Features  
An optimal solution for antenna switching in mobile phones.  
Low capacitance.(C1 = 1.0 pF max)  
Low forward resistance. (rf = 0.7 max)  
Ultra small Flat Package (UFP) is suitable for surface moun
Ordering Information  
Type No.  
Laser Mark  
e Code  
P  
HVC133A  
T9  
Pin Arrangement  
2
1. Cathode  
2. Anode  
Rev.1.00, Jan.21.2004, page 1 of 4  
HVC133A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VR  
Value  
30  
Unit  
V
Reverse voltage  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
150  
mW  
°C  
Tj  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit
Reverse voltage  
Reverse current  
Forward voltage  
Capacitance  
VR  
IR  
30  
V
100  
0.
VF  
C1  
C6  
1 MHz  
, f = 1 MHz  
2 mA, f = 100 MHz  
Forward resistance rf  
Rev.1.00, Jan.21.2004, page 2 of 4  
HVC133A  
Main Characteristic  
10–2  
10–4  
10–6  
10–8  
10–10  
10–11  
10–12  
10–13  
Ta= 75°C  
Ta= 50°C  
Ta= 75°C  
a= 25°C  
Ta= 50°C  
Ta= 25°C  
10–10  
10–12  
0
0.2  
0.4  
0.6  
0.8  
1.0  
rse voltage VR (V)  
verse current vs. Reverse voltage  
15  
20  
25  
30  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward volta
f = 100MHz  
10  
10  
1.0  
0.1  
1.0  
0.1  
0.1  
0.1  
1.0  
10  
1.0  
10  
Forward current IF (mA)  
Reverse voltage VR (V)  
Fig.4 Forward resistance vs. Forward current  
Fig.3 Capacitance vs. Reverse voltage  
Rev.1.00, Jan.21.2004, page 3 of 4  
HVC133A  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.2 ± 0.10  
1.6 ± 0.10  
de  
UFP  
(reference value)  
Conforms  
0.0016 g  
Rev.1.00, Jan.21.2004, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliaut there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measuplacement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesst suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other riogy Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any e of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these m
3. All information contained in these materials, including product data, diagrams, charts, pron on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. ts or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an autt distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typograph
Renesas Technology Corp. assumes no responsibility for any damage, liabilityes or errors.  
Please also pay attention to information published by Renesas Technology esas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, incrams, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from
5. Renesas Technology Corp. semiconductors are not designed or mhat is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corporp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apcular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is or in part these materials.  
7. If these products or technologies are subject to the Japabe exported under a license from the Japanese government and  
cannot be imported into a country other than the appr
Any diversion or reexport contrary to the export conhe country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for furucts contained therein.  
RENESAS SALES OF
http://www.renesas.com  
Renesas Technology Ame
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Tel: <1> (408) 382-7500 Fax
Renesas Technology Europe Li
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Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11  
Renesas Technology Hong Kong Ltd.  
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2375-6836  
Renesas Technology Taiwan Co., Ltd.  
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 1.0  

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