HVC133TRF-E [RENESAS]

15V, SILICON, PIN DIODE;


型号：	HVC133TRF-E
厂家：	RENESAS TECHNOLOGY CORP
描述：	15V, SILICON, PIN DIODE PIN二极管开关测试光电二极管
文件：	总7页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

To all our customers

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

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circuit application examples contained in these materials.

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contained therein.

HVC133

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

ADE-208-423B (Z)

Rev. 2

Feb. 2000

Features

•

Low capacitance.(C1 = 1.0pF max)

Low forward resistance. (rf = 0.7Ω max)

Ultra small Flat Package (UFP) is suitable for surface mount design.

Ordering Information

Type No.

Laser Mark

Package Code

HVC133

UFP

Pin Arrangement

Cathode mark

Mark

1. Cathode

2. Anode

HVC133

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_R

Value

Unit

Reverse voltage

Power dissipation

Junction temperature

Storage temperature

P_d

150

°C

125

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ Max Unit Test Condition

Reverse voltage

Reverse current

Forward voltage

Capacitance

V_R

I_R

—

I_R= 1µA

100

0.85

1.0

0.9

V_R= 25V

V_F

C₁

C₆

I_F= 2 mA

V_R= 1V, f = 1 MHz

V_R= 6V, f = 1 MHz

Forward resistance r_f

0.55 0.7

Ω

I_F= 2mA, f = 100 MHz

Rev.2, Feb. 2000, page 2 of 5

HVC133

Main Characteristic

-10

10^-2

10^-4

-11

Ta= 75°C

Ta= 50°C

10^-6

10^-8

10^-12

Ta= 75°C

Ta= 50°C

Ta= 25°C

10^-13

10^-10

Ta= 25°C

-12

-14

0.6

0.8

0.2

0.4

1.0

Forward voltage V_F(V)

Reverse voltage V_R(V)

Fig.1 Forward current Vs. Forward voltage

Fig.2 Reverse current Vs. Reverse voltage

10³

f=1MHz

f=100MHz

10²

10¹

1.0

0.1

10^-1

-2

-4

10^-5

Forward current I_F(A)

10^-3

1.0

0.1

Reverse voltage V_R(V)

Fig.4 Forward resistance Vs. Forward current

Fig.3 Capacitance Vs. Reverse voltage

Rev.2, Feb. 2000, page 3 of 5

HVC133

Package Dimensions

Unit: mm

1.2 0.10

1.6 0.10

Hitachi Code

JEDEC

EIAJ

UFP

—

Conforms

0.0016 g

Mass

Rev.2, Feb. 2000, page 4 of 5

HVC133

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

Asia

: http://semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

Hitachi Europe Ltd.

Hitachi Asia Ltd.

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

(America) Inc.

Electronic Components Group

Hitachi Tower

179 East Tasman Drive Whitebrook Park

San Jose,CA 95134

Tel: <1> (408) 433-1990 Maidenhead

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Tel: <44> (1628) 585000

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Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

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World Finance Centre,

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Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://semiconductor.hitachi.com.hk

Fax: <44> (1628) 585200

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Colophon 4.0

Rev.2, Feb. 2000, page 5 of 5

HVC133TRF-E [RENESAS]

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