HVC308AKRV [RENESAS]

35V, SILICON, VARIABLE CAPACITANCE DIODE;
HVC308AKRV
型号: HVC308AKRV
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

35V, SILICON, VARIABLE CAPACITANCE DIODE

二极管 变容二极管 电视
文件: 总5页 (文件大小:143K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVC308A  
Variable Capacitance Diode for TV tuner  
REJ03G0099-0200Z  
(Previous: ADE-208-411A)  
Rev.2.00  
Sep.23.2003  
Features  
Low series resistance. (rs = 0.95 max)  
Ultra small Flat Package (UFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
UFP  
HVC308A  
V
Pin Arrangement  
Cathode mark  
Mark  
1
2
1. Cathode  
2. Anode  
Rev.2.00, Sep.23.2003, page 1 of 4  
HVC308A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VR  
Value  
35  
Unit  
V
Reverse voltage  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Tstg  
55 to +125  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Reverse current  
IR1  
IR2  
C2  
C20  
n
10  
nA  
VR = 30 V  
100  
VR = 30 V, Ta = 60°C  
VR = 2 V, f = 1 MHz  
VR = 20 V, f = 1 MHz  
C2/C20  
Capacitance  
13.7  
1.65  
7.12  
15.9 pF  
2.06  
Capacitance ratio  
Series resistance  
rs  
0.95  
VR = 5 V, f = 470 MHz  
Rev.2.00, Sep.23.2003, page 2 of 4  
HVC308A  
Main Characteristic  
10–9  
10–10  
10–11  
10–12  
10–13  
25  
20  
15  
10  
5
0
1.0  
0
10  
Reverse voltage VR (V)  
Fig.1 Reverse current vs. Reverse voltage  
20  
30  
40  
50  
10  
40  
Reverse voltage VR (V)  
Fig.2 Capacitance vs. Reverse voltage  
1.2  
0
–0.5  
–1.0  
–1.5  
f = 470MHz  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
10  
Reverse voltage VR (V)  
40  
1.0  
10  
40  
Reverse voltage VR (V)  
Fig.3 Series resistance vs. Reverse voltage  
Fig.4 Linearity factor vs. Reverse voltage  
Rev.2.00, Sep.23.2003, page 3 of 4  
HVC308A  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.2 ± 0.10  
1.6 ± 0.10  
Package Code  
JEDEC  
UFP  
JEITA  
Mass (reference value)  
Conforms  
0.0016 g  
Rev.2.00, Sep.23.2003, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited.  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom  
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900  
Renesas Technology Europe GmbH  
Dornacher Str. 3, D-85622 Feldkirchen, Germany  
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11  
Renesas Technology Hong Kong Ltd.  
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2375-6836  
Renesas Technology Taiwan Co., Ltd.  
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 1.0  

相关型号:

HVC308ATRF

Variable Capacitance Diode, 35V, Silicon
HITACHI

HVC308ATRF

35V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC308ATRF-E

35V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC308ATRU

35V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC308ATRV

35V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS

HVC30R

100mA SILICON CARTRIDGE RECTIFIERS
ETC

HVC316

Variable Capacitance Diode for BS/CS tuner
RENESAS

HVC317B

Variable Capacitance Diode for tuner
HITACHI

HVC317B

Variable Capacitance Diode for Tuner
LRC

HVC317B

Variable Capacitance Diode for tuner
RENESAS

HVC317BKRF

Variable Capacitance Diode, 30V, Silicon
HITACHI

HVC317BKRF

30V, SILICON, VARIABLE CAPACITANCE DIODE
RENESAS