HVC417C [RENESAS]

Variable Capacitance Diode for tuner; 变容二极管的调谐器
HVC417C
型号: HVC417C
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Variable Capacitance Diode for tuner
变容二极管的调谐器

二极管 变容二极管 光电二极管
文件: 总7页 (文件大小:81K)
中文:  中文翻译
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Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
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names are mentioned in the document, these names have in fact all been changed to Renesas  
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April 1, 2003  
Cautions  
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HVC417C  
Variable Capacitance Diode for tuner  
ADE-208-1433 (Z)  
Rev.0  
Apr. 2002  
Features  
High capacitance ratio. (n =13.0 min)  
Ultra small Flat Package (UFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
UFP  
HVC417C  
A8  
Pin Arrangement  
Cathode mark  
Mark  
1. Cathode  
2. Anode  
1
2
HVC417C  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VR  
Value  
30  
Unit  
V
Reverse voltage  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
Tstg  
55 to +125  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Reverse current  
IR1  
10  
nA  
VR = 25 V  
IR2  
100  
9.4  
0.6  
VR = 25 V, Ta = 60°C  
VR = 1 V, f = 1 MHz  
VR = 25 V, f = 1 MHz  
C1/C25  
Capacitance  
C1  
7.8  
0.5  
13.0  
pF  
C25  
Capacitance ratio  
Series resistance  
Matching error  
n
rs  
1.5  
6.0  
VR = 5V, f = 470 MHz  
VR = 1 to 25 V, f = 1 MHz  
C/C *1  
%
Note: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C  
continuous in a reel, expect extention to another group.  
Calculate Matching Error,  
(Cmax Cmin)  
C/C =  
× 100 (%)  
Cmin  
Rev.0, Apr. 2002, page 2 of 2  
HVC417C  
Main Characteristic  
1010  
10  
8
f = 1MHz  
1011  
1012  
1013  
1014  
6
4
2
0
0
5
10  
15  
20  
25  
30  
1.0  
10  
Reverse voltage VR (V)  
100  
Reverse voltage VR (V)  
Fig.1 Reverse current vs. Reverse voltage  
Fig.2 Capacitance vs. Reverse voltage  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
f = 470MHz  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0.5  
1.0  
10  
1.0  
10  
30  
Reverse voltage VR (V)  
Reverse voltage VR (V)  
Fig.3 Series resistance vs. Reverse voltage  
Fig.4 Linearity factor vs. Reverse voltage  
Rev.0, Apr. 2002, page 3 of 3  
HVC417C  
Package Dimensions  
As of January, 2002  
Unit: mm  
1.2 0.10  
1.6 0.10  
Hitachi Code  
JEDEC  
UFP  
JEITA  
Mass (reference value)  
Conforms  
0.0016 g  
Rev.0, Apr. 2002, page 4 of 4  
HVC417C  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
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URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
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(Taipei Branch Office)  
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Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
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Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.  
Colophon 6.0  
Rev.0, Apr. 2002, page 5 of 5  

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