HVD191KRF-E [RENESAS]

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HVD191KRF-E
型号: HVD191KRF-E
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
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二极管 衰减器
文件: 总5页 (文件大小:42K)
中文:  中文翻译
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HVD191  
Silicon Epitaxial Planar PIN Diode for  
High Frequency Attenuator  
REJ03G0015-0100Z  
Rev.1.00  
Apr.28.2003  
Features  
Low capacitance. (C 0.37 pF)  
Low forward resistance. (rf 2.5 )  
Super small Flat Package (SFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
SFP  
HVD191  
H2  
Pin Arrangement  
Cathode mark  
Mark  
1
2
H2  
1. Cathode  
2. Anode  
Rev.1.00, Apr.28.2003, page 1 of 5  
HVD191  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
30  
Unit  
V
Reverse voltage  
Forward current  
Power dissipation  
Junction temperature  
Storage temperature  
VR  
IF  
100  
mA  
mW  
°C  
Pd  
Tj  
150  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Forward voltage  
Reverse current  
Capacitance  
VF  
IR  
1.0  
0.1  
V
IF = 10 mA  
µA  
VR = 30 V  
C
0.37 pF  
2.5  
VR = 1 V, f = 1 MHz  
Forward resistance rf  
IF = 10 mA, f = 100 MHz  
Notes: 1. Please do not use the soldering iron due to avoid high stress to the SFP package.  
2. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is  
considered as unquestioned. Please kindly consider soldering nature.  
Rev.1.00, Apr.28.2003, page 2 of 5  
HVD191  
Main Characteristic  
10–2  
10–4  
107  
108  
109  
10–6  
1010  
1011  
1012  
1013  
1014  
10–8  
10–10  
10–12  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
0
10  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
20  
30  
40  
50  
10  
103  
f = 1MHz  
f = 100MHz  
102  
101  
1.0  
0.1  
100  
0.01  
101  
0.1  
1.0  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
10  
100  
104  
103  
Forward current IF (A)  
Fig.4 Forward resistance vs. Forward current  
102  
101  
Rev.1.00, Apr.28.2003, page 3 of 5  
HVD191  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.0 ± 0.10  
1.4 ± 0.10  
Package Code  
JEDEC  
SFP  
JEITA  
Mass (reference value)  
0.0010 g  
Rev.1.00, Apr.28.2003, page 4 of 5  
HVD191  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with  
them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of  
nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they  
do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,  
programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these  
materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers  
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed  
herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information  
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,  
liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially  
at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained  
herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be  
imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.  
http://www.renesas.com  
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.  
Colophon 0.0  
Rev.1.00, Apr.28.2003, page 5 of 5  

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