HVL144AM [RENESAS]
Silicon Epitaxial Trench Pin Diode for Antenna Switching; 硅外延海沟PIN二极管的天线切换型号: | HVL144AM |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon Epitaxial Trench Pin Diode for Antenna Switching |
文件: | 总6页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HVL144AM
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0199-0200
Rev.2.00
Jan 20, 2006
Features
•
•
•
•
Adopting the trench structure improves low capacitance.(C = 0.43 pF max)
Low forward resistance. (rf = 1.8 Ω max)
Low operation current.
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package
Package Code
T
HVL144AM
K
PUSF0002ZA-A
Pin Arrangement
Cathode
1
athode
Anode
Rev.2.00 Jan 20, 2006 page 1 of 5
HVL144AM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
30
Unit
Reverse voltage
VR
IF
V
Forward current
100
mA
mW
°C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
100
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
—
Typ
Max
100
0.90
0.43
1.80
—
Unit
nA
V
Test Condition
Reverse current
Forward voltage
Capacitance
IR
VF
C
—
—
—
—
—
VR = 30 V
= 2 mA
—
—
p
1 V, f = 1 MHz
Forward resistance
ESD-Capability *1
rf
—
, f = 100 MHz
—
100
R = 0 Ω, Both forward
ection 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. For TEFP package, the material of lead is exposed dering nature of lead tip
part is considered as unquestioned. Please kind
Rev.2.00 Jan 20, 2006 page 2 of 5
HVL144AM
Main Characteristic
10-2
10-8
Ta = 75°C
10-9
10-10
10-11
10-4
10-6
10-8
Ta = 25°C
Ta = 75°C
Ta = 25°C
10-12
10-10
10-13
10-12
10-14
0
0.2
0.4
0.6
0.8
1.0
0
30
40
50
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
R (V)
. Reverse voltage
f = 1MHz
f = 100MHz
10
1.0
1.0
0.1
0.1
10-4
10-3
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
10-2
10-1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.2.00 Jan 20, 2006 page 3 of 5
HVL144AM
106
105
104
103
102
101
100
10-1
f=100MHz
0
0.2
0.4
0.6
0.8
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) vs. Forward volge
Rev.2.00 Jan 20, 2006 page 4 of 5
HVL144AM
Package Dimensions
Package Name
TEFP
JEITA Package Code
RENESAS Code
PUSF0002ZA-A
Previous Code
TEFP / TEFPV
MASS[Typ.]
0.0006g
D
b
E
H
E
c
e
φb
Dimension in Millimeters
A
Min
-
Nom
-
Max
0.40
0.35
0.18
0.65
0.90
1.05
-
b
0.25
0.08
0.55
0.75
0.95
-
0.30
0.13
0.60
0.80
1.00
0.40
1.00
c
D
E
HE
φb
e1
-
-
Rev.2.00 Jan 20, 2006 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Tecroduct best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, bTechnology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-pn the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these material
3. All information contained in these materials, including product data, diagrams, charts, programs ation on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. withous or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized ributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical erro
Renesas Technology Corp. assumes no responsibility for any damage, liability, or oth.
Please also pay attention to information published by Renesas Technology Corp. by ology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including algorithms, please be sure to
evaluate all information as a total system before making a final decision on thRenesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the info
5. Renesas Technology Corp. semiconductors are not designed or manufacd under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an ct distributor when considering the use of a
product contained herein for any specific purposes, such as apparatuical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necesthese materials.
7. If these products or technologies are subject to the Japanese ed under a license from the Japanese government and
cannot be imported into a country other than the approved d
Any diversion or reexport contrary to the export control lawof destination is prohibited.
8. Please contact Renesas Technology Corp. for further dained therein.
RENESAS SALES OFFICE
http://www.renesas.com
Refer to "http://www.renesas.coinformation.
Renesas Technology Ameri
450 Holger Way, San Jose
Tel: <1> (408) 382-7500
Renesas Technolo
Dukes Meadow, Millbshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-1
Renesas Technology (Sha
Unit 205, AZIA Center, No.133 udong District, Shanghai 200120, China
Tel: <86> (21) 5877-1818, Fax: -7898
Renesas Technology Hong Kong L
7th Floor, North Tower, World Finance ntre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .5.0
相关型号:
©2020 ICPDF网 联系我们和版权申明