HVU145 [RENESAS]

Silicon Epitaxial Planar Pin Diode for Antenna Switching; 硅外延平面PIN二极管的天线切换
HVU145
型号: HVU145
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Planar Pin Diode for Antenna Switching
硅外延平面PIN二极管的天线切换

PIN二极管 开关 测试 光电二极管
文件: 总6页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVU145  
Silicon Epitaxial Planar Pin Diode for Antenna Switching  
REJ03G0437-0200  
(Previous: ADE-208-1508A)  
Rev.2.00  
Dec 07, 2004  
Features  
An optimal solution for antenna switching in mobile phones.  
Low capacitance. (C =0.45 pF max)  
Low forward resistance. (rf = 1.8 max)  
Ultra small Resin Package (URP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HVU145  
T5  
URP  
Pin Arrangement  
Cathode mark  
Mark  
1
2
T5  
1. Cathode  
2. Anode  
Rev.2.00 Dec 07, 2004 page 1 of 5  
HVU145  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
60  
Unit  
Reverse voltage  
VR  
IF  
V
Forward current  
50  
mA  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
100  
0.9  
Unit  
nA  
V
Test Condition  
Reverse current  
Forward voltage  
Capacitance  
IR  
VF  
C
VR = 60 V  
IF = 2 mA  
0.45  
1.8  
pF  
VR = 1 V, f = 1 MHz  
Forward resistance  
ESD-Capability *1  
rf  
IF = 10 mA, f = 100 MHz  
100  
V
C = 200 pF, R = 0 , Both forward  
and reverse direction 1 pulse.  
Note: 1. Failure criterion ; IR > 100 nA at VR = 60 V  
Rev.2.00 Dec 07, 2004 page 2 of 5  
HVU145  
Main Characteristic  
10-2  
10-7  
10-8  
10-9  
10-4  
10-6  
10-8  
Ta = 75°C  
Ta = 50°C  
10-10  
Ta = 75°C  
Ta = 25°C  
10-11  
10-12  
Ta = –25°C  
Ta = 25°C  
10-10  
10-12  
10-13  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
20  
40  
60  
80  
100  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
103  
f = 1MHz  
f = 100MHz  
10  
102  
101  
100  
10-1  
1.0  
0.1  
10-4  
10-3  
Forward current IF (A)  
Fig.4 Forward resistance vs. Forward current  
10-2  
10-1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.2.00 Dec 07, 2004 page 3 of 5  
HVU145  
107  
106  
105  
104  
103  
102  
101  
100  
f=100MHz  
0
0.2  
Forward voltage VF (V)  
Fig.5 Forward resistance (parallel) vs. Forward voltage  
0.4  
0.6  
0.8  
Rev.2.00 Dec 07, 2004 page 4 of 5  
HVU145  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.7 ± 0.15  
2.5 ± 0.15  
Package Code  
JEDEC  
JEITA  
URP  
Conforms  
Mass (reference value)  
0.004 g  
Rev.2.00 Dec 07, 2004 page 5 of 5  
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
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