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HZM24N [RENESAS]

Silicon Epitaxial Planar Zener Diode for Stabilizer; 硅外延平面齐纳二极管的稳定器
HZM24N
型号： HZM24N
厂家： RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述：

Silicon Epitaxial Planar Zener Diode for Stabilizer
硅外延平面齐纳二极管的稳定器

二极管 齐纳二极管
文件： 总8页 (文件大小：195K)
中文：  中文翻译
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HZM-N Series  
Silicon Epitaxial Planar Zener Diode for Stabilizer  
REJ03G0483-0500  
(Previous: ADE-208-130D)  
Rev.5.00  
Dec 14, 2004  
Features  
•
Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  
MPAK Package is suitable for high density surface mounting and high speed assembly.  
•
Ordering Information  
Type No.  
HZM-N Series  
Laser Mark  
Let to Mark Code  
Package Code  
MPAK  
Pin Arrangement  
3
1. NC  
2. Anode  
3. Cathode  
1
2
(Top View)  
Rev.5.00, Dec.14.2004, page 1 of 7  
HZM-N Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Power dissipation  
Junction temperature  
Storage temperature  
Note: 1. See Fig. 3.  
Symbol  
Value  
200  
150  
Unit  
mW  
°C  
Pd *1  
Tj  
Tstg  
−55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
Reverse Current  
Dynamic Resistance  
Test  
Test  
Test  
VZ (V)*1  
Condition  
IR (µA)  
Max  
120  
Condition  
rd (Ω)  
Max  
100  
100  
100  
Condition  
Type  
Grade  
B
B
B
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
Min  
1.90  
2.10  
2.30  
2.50  
2.50  
2.65  
2.80  
2.80  
2.95  
3.10  
3.10  
3.25  
3.40  
3.40  
3.55  
3.70  
3.70  
3.87  
4.01  
4.01  
4.15  
4.28  
4.42  
4.42  
4.55  
4.69  
4.84  
4.84  
4.98  
5.14  
5.31  
5.31  
5.49  
5.67  
Max  
2.20  
2.40  
2.60  
2.90  
2.75  
2.90  
3.20  
3.05  
3.20  
3.50  
3.35  
3.50  
3.80  
3.65  
3.80  
4.10  
3.97  
4.10  
4.48  
4.21  
4.34  
4.48  
4.90  
4.61  
4.75  
4.90  
5.37  
5.04  
5.20  
5.37  
5.92  
5.55  
5.73  
5.92  
IZ (mA)  
VR (V)  
0.5  
IZ (mA)  
HZM2.0N  
HZM2.2N  
HZM2.4N  
HZM2.7N  
5
5
5
5
5
5
5
5
120  
0.7  
120  
1.0  
120  
1.0  
110  
HZM3.0N  
HZM3.3N  
HZM3.6N  
HZM3.9N  
HZM4.3N  
5
5
5
5
5
50  
20  
10  
10  
10  
1.0  
1.0  
1.0  
1.0  
1.0  
120  
130  
130  
130  
130  
5
5
5
5
5
HZM4.7N  
HZM5.1N  
HZM5.6N  
5
5
5
10  
5
1.0  
1.5  
2.5  
130  
130  
80  
5
5
5
5
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 2 of 7  
HZM-N Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition  
IZ (mA)  
5
IR (µA)  
Condition  
rd (Ω)  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
5.86  
5.86  
6.06  
6.26  
6.47  
6.47  
6.65  
6.86  
7.06  
7.06  
7.28  
7.52  
7.76  
7.76  
8.02  
8.28  
8.56  
8.56  
8.85  
9.15  
9.45  
9.45  
9.77  
10.11  
10.44  
10.44  
10.76  
11.10  
11.42  
11.42  
11.74  
12.08  
12.47  
12.47  
12.91  
13.37  
13.84  
13.84  
14.34  
14.85  
15.37  
15.37  
15.85  
16.35  
16.94  
16.94  
17.56  
18.21  
Max  
6.53  
6.12  
6.33  
6.53  
7.14  
6.73  
6.93  
7.14  
7.84  
7.36  
7.60  
7.84  
8.64  
8.10  
8.36  
8.64  
9.55  
8.93  
9.23  
9.55  
Max  
2
VR (V)  
3.0  
HZM6.2N  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZM6.8N  
HZM7.5N  
HZM8.2N  
HZM9.1N  
HZM10N  
HZM11N  
HZM12N  
HZM13N  
5M15N  
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
3.5  
4.0  
30  
30  
30  
30  
30  
30  
35  
35  
40  
40  
45  
5
5
5
5
5
5
5
5
5
5
5
5.0  
6.0  
10.55  
9.87  
7.0  
10.21  
10.55  
11.56  
10.88  
11.22  
11.56  
12.60  
11.90  
12.24  
12.60  
13.96  
13.03  
13.49  
13.96  
15.52  
14.46  
14.98  
15.52  
17.09  
16.01  
16.51  
17.09  
19.03  
17.70  
18.35  
19.03  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZM16N  
HZM18N  
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 3 of 7  
HZM-N Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition  
IZ (mA)  
5
IR (µA)  
Condition  
rd (Ω)  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
Max  
2
VR (V)  
15.0  
HZM20Ｎ  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
18.86  
18.86  
19.52  
20.21  
20.88  
20.88  
21.54  
22.23  
22.93  
22.93  
23.72  
24.54  
25.10  
28.00  
31.00  
34.00  
21.08  
19.70  
20.39  
21.08  
23.17  
21.77  
22.47  
23.17  
25.57  
23.96  
24.78  
25.57  
28.90  
32.00  
35.00  
38.00  
HZM22N  
HZM24N  
5
5
2
2
17.0  
19.0  
55  
60  
5
5
B1  
B2  
B3  
B
B
B
HZM27N  
HZM30N  
HZM33N  
HZM36N  
2
2
2
2
2
2
2
2
21.0  
23.0  
25.0  
27.0  
70  
80  
80  
90  
2
2
2
2
B
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 4 of 7  
HZM-N Series  
Mark Code  
Type  
Grade  
Mark No.  
2 0 –  
2 2 –  
2 4 –  
2 7 1  
2 7 2  
3 0 1  
3 0 2  
3 3 1  
3 3 2  
3 6 1  
3 6 2  
3 9 1  
3 9 2  
4 3 1  
4 3 2  
4 3 3  
4 7 1  
4 7 2  
4 7 3  
5 1 1  
5 1 2  
5 1 3  
5 6 1  
5 6 2  
5 6 3  
Type  
HZM6.2N  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
Mark No.  
6 2 1  
6 2 2  
6 2 3  
6 8 1  
6 8 2  
6 8 3  
7 5 1  
7 5 2  
7 5 3  
8 2 1  
8 2 2  
8 2 3  
9 1 1  
9 1 2  
9 1 3  
1 0 1  
1 0 2  
1 0 3  
1 1 1  
1 1 2  
1 1 3  
1 2 1  
1 2 2  
1 2 3  
Type  
HZM13N  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B
Mark No.  
1 3 1  
1 3 2  
1 3 3  
1 5 1  
1 5 2  
1 5 3  
1 6 1  
1 6 2  
1 6 3  
1 8 1  
1 8 2  
1 8 3  
2 0 1  
2 0 2  
2 0 3  
2 2 1  
2 2 2  
2 2 3  
2 4 1  
2 4 2  
2 4 3  
2 7 –  
3 0 –  
3 3 –  
3 6 –  
HZM2.0N  
HZM2.2N  
HZM2.4N  
HZM2.7N  
B
B
B
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
HZM6.8N  
HZM7.5N  
HZM8.2N  
HZM9.1N  
HZM10N  
HZM11N  
HZM12N  
HZM15N  
HZM16N  
HZM18N  
HZM20N  
HZM22N  
HZM24N  
HZM3.0N  
HZM3.3N  
HZM3.6N  
HZM3.9N  
HZM4.3N  
HZM4.7N  
HZM5.1N  
HZM5.6N  
HZM27N  
HZM30N  
HZM33N  
HZM36N  
B
B
B
Example of Marking  
1. One grade type (grade type B)  
Underline  
20 -  
30 -  
-
HZM2.0NB  
HZM30NB  
2. Two grade type (B1, B2)  
301  
302  
HZM3.0NB1  
HZM3.0NB2  
3. Three grade type (B1, B2, B3)  
433  
431  
432  
HZM4.3NB1  
HZM4.3NB3  
HZM4.3NB2  
Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max.  
B grade is standard and has better delivery, These are marked one of B1, B2, B3.  
Ordering P/N HZM-N series are delivered taped (TL/TR).  
Choose one taping code and adhere to parts No.  
Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).  
(Grade B type)  
2.  
3.  
HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR).  
(Grade B1, B2, B3 type)  
Rev.5.00, Decl.14.2004, page 5 of 7  
HZM-N Series  
Main Characteristic  
10  
8
6
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
0.10  
0.09  
0.08  
250  
1.0mm  
45  
40  
%/°C  
0.07  
0.06  
0.05  
0.04  
0.03  
35  
200  
Cu Foil  
30  
25  
20  
15  
10  
5
Printed circuit board  
×
×
25 62 1.6t mm  
Material:  
Glass Epoxy Resin+Cu Foil  
mV/°C  
150  
0.02  
0.01  
0
0
–5  
100  
–0.01  
–0.02  
–0.03  
–0.04  
–0.05  
–0.06  
–0.07  
–10  
–15  
–20  
50  
–25  
–30  
0
0
5
10 15 20 25 30 35 40 45  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.5.00, Decl.14.2004, page 6 of 7  
HZM-N Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3–0.4  
0 – 0.1  
(0.95) (0.95)  
1.9 ± 0.2  
+ 0.3  
– 0.1  
2.8  
Package Code  
JEDEC  
MPAK  
—
JEITA  
Mass (reference value)  
Conforms  
0.011 g  
Rev.5.00, Decl.14.2004, page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
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Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
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Tel: <852> 2265-6688, Fax: <852> 2730-6071  
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .2.0  

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