HZM4.3FA [RENESAS]
Silicon Epitaxial Planar Zener Diode for Surge Absorb; 硅外延平面齐纳二极管的浪涌吸收
| 型号： | HZM4.3FA |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to tents of the document, and
these changes do not constitute any alteration to the contents nt itself.
Renesas Technology Home Pa.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
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Please also pay attention to infos Technology Corporation by various
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contained therein.
HZM4.3FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-468B (Z)
Rev.2
Nov. 2002
Features
•
•
HZM4.3FA has four devices, and can absorb surge.
MPAK-5 Package is suitable for high density surface mounting speed assembly.
Ordering Information
Type No.
Laser Mark
age Code
HZM4.3FA
43A
PAK-5
Pin Arrangement
5
2
3
1. Cathode
2. Cathode
3. Cathode
4. Anode
4
5. Cathode
(Top View)
HZM4.3FA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pd *
Tj
Value
200
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
Note: Four device total, See Fig.2.
150
Tstg
–55 to +150
°C
Electrical Characteristics*1
(Ta = 25°C)
Item
Symbol Min
Typ
Max
4.48
10
Unit Ttion
Zener voltage
Reverse current
Capacitance
VZ
IR
4.01
—
—
—
—
—
—
V
s pulse
µ
C
—
150
1
1 MHz
Dynamic resistance
ESD-Capability *2
rd
—
—
30
50 pF, R = 330 Ω, Both forward and
erse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; IR > 10 µA
Rev.2, Nov. 2002, page 2 of 2
HZM4.3FA
Main Characteristic
10
1.0
10-1
10-2
10-3
10-4
10-5
10-6
10-7
0
1
2
3
4
Zener Vo
Fig.1 Zeneage
250
100
50
1.0mm
Cu Foil
Printed circuit board
×
×
25 62 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
0
0
50
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
100
150
200
Rev.2, Nov. 2002, page 3 of 3
HZM4.3FA
104
PRSM
Ta = 25°C
t
nonrepetitive
103
102
10
1.0
10-5
10-4
10-3
0-1
1.0
Time t
Fig.3 Surge Reve
104
103
102
10
20hx15wx0.8t
0.4
1.5
1.75
1.0
unit: mm
1.0
10-2
10-1
1.0
10
102
103
Time t (s)
Fig.4 Transient Thermal Impedance
Rev.2, Nov. 2002, page 4 of 4
HZM4.3FA
Package Dimensions
As of July, 2001
Unit: mm
1.9 0.2
(0.95)
(0.95)
+ 0.1
– 0.05
0.16
0 – 0.10
+ 0.1
– 0.05
5 – 0.4
2.9 0.2
MPAK-5
—
—
s (reference value)
0.013 g
Rev.2, Nov. 2002, page 5 of 5
HZM4.3FA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibilitr failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed rangder normally foreseeable
failure rates or failure modes in semiconductor devices and emeasures such as fail-
safes, so that the equipment incorporating Hitachi product y injury, fire or other
consequential damage due to operation of the Hitachi p
5. This product is not designed to be radiation resistan
6. No one is permitted to reproduce or duplicate, ir part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any quecument or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.2, Nov. 2002, page 6 of 6
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