HZS2ALLTA-E [RENESAS]

暂无描述;


型号：	HZS2ALLTA-E
厂家：	RENESAS TECHNOLOGY CORP
描述：	暂无描述二极管齐纳二极管
文件：	总7页 (文件大小：56K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HZS Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

REJ03G0184-0300Z

(Previous: ADE-208-120B)

Rev.3.00

Mar.11.2004

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc.

•

Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.3.00, Mar.11.2004, page 1 of 6

HZS Series

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

400

Unit

°C

Power dissipation

Junction temperature

Storage temperature

200

Tstg

−55 to +175

°C

Electrical Characteristics

(Ta = 25°C)

Zener Voltage

V_Z(V)*¹

Reverse Current

Dynamic Resistance

Test

Condition

Test

I_R(µA)

Max

Condition

V_R(V)

0.5

r_d(Ω)

Max

100

Condition

Type

Grade

Min

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

Max

I_Z(mA)

HZS2

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

4.0

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

5.0

0.5

100

HZS3

HZS4

HZS5

1.0

100

1.5

100

Note: 1. Tested with DC.

Rev.3.00, Mar.11.2004, page 2 of 6

HZS Series

(Ta = 25°C)

Dynamic Resistance

Zener Voltage

V_Z(V)*¹

Reverse Current

Test

Condition

Test

I_R(µA)

Max

Condition

V_R(V)

1.5

r_d(Ω)

Max

100

Condition

Type

Grade

Min

4.9

Max

I_Z(mA)

HZS5

5.1

5.0

5.2

5.1

5.3

HZS6

HZS7

HZS9

HZS11

5.2

5.5

2.0

3.5

5.0

7.5

5.3

5.6

5.4

5.7

5.5

5.8

5.6

5.9

5.7

6.0

5.8

6.1

6.0

6.3

6.1

6.4

6.3

6.6

6.4

6.7

6.6

6.9

6.7

7.0

6.9

7.2

7.0

7.3

7.2

7.6

7.3

7.7

7.5

7.9

7.7

8.1

7.9

8.3

8.1

8.5

8.3

8.7

8.5

8.9

8.7

9.1

8.9

9.3

9.1

9.5

9.3

9.7

9.5

9.9

9.7

10.1

10.3

10.6

10.8

11.1

11.3

11.6

11.9

12.1

12.4

12.7

12.9

13.1

13.4

9.9

10.2

10.4

10.7

10.9

11.1

11.4

11.6

11.9

12.2

12.4

12.6

12.9

HZS12

9.5

Note: 1. Tested with DC.

Rev.3.00, Mar.11.2004, page 3 of 6

HZS Series

(Ta = 25°C)

Dynamic Resistance

Zener Voltage

V_Z(V)*¹

Reverse Current

Test

Condition

Test

I_R(µA)

Max

Condition

V_R(V)

9.5

r_d(Ω)

Max

Condition

Type

Grade

Min

Max

I_Z(mA)

HZS12

13.2

13.5

13.8

14.1

14.5

14.9

15.3

15.7

16.3

16.9

17.5

18.1

18.8

19.5

20.2

20.9

21.6

22.3

22.9

23.6

24.3

25.2

26.2

27.2

28.2

29.2

30.2

31.2

32.2

33.2

34.2

35.3

36.4

13.7

14.0

14.3

14.7

15.1

15.5

15.9

16.5

17.1

17.7

18.3

19.0

19.7

20.4

21.1

21.9

22.6

23.3

24.0

24.7

25.5

26.6

27.6

28.6

29.6

30.6

31.6

32.6

33.6

34.6

35.7

36.8

38.0

HZS15

HZS16

HZS18

HZS20

HZS22

HZS24

HZS27

HZS30

HZS33

HZS36

11.0

12.0

13.0

15.0

17.0

19.0

21.0

23.0

25.0

27.0

100

120

140

Notes: 1. Tested with DC.

2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.

Rev.3.00, Mar.11.2004, page 4 of 6

HZS Series

Main Characteristic

10^–2

10^–3

10^–4

10^–5

10^–6

10^–7

10^–8

Zener Voltage V_Z(V)

Fig.1 Zener current vs. Zener voltage

0.10

500

400

300

200

100

%/°C

0.08

0.06

0.04

0.02

2.5 mm

3 mm

Printed circuit board

100 180 1.6t mm

Material: paper phenol

mV/°C

l = 5 mm

−0.02

−0.04

−0.06

−0.08

−0.10

−10

−20

−30

−40

−50

l = 10 mm

(Publication value)

10 15 20 25 30 35 40

Ambient Temperature Ta (°C)

Fig.3 Power Dissipation vs. Ambient Temperature

100

150

200

Zener Voltage V_Z(V)

Fig.2 Temperature Coefficient vs. Zener voltage

Rev.3.00, Mar.11.2004, page 5 of 6

HZS Series

Package Dimensions

As of January, 2003

Unit: mm

26.0 Min

2.4 Max

Package Code

JEDEC

JEITA

MHD

Conforms

—

Mass (reference value)

0.084 g

Rev.3.00, Mar.11.2004, page 6 of 6

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a

product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater

use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and

cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

http://www.renesas.com

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501

Renesas Technology Europe Limited.

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom

Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900

Renesas Technology Europe GmbH

Dornacher Str. 3, D-85622 Feldkirchen, Germany

Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.

7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.

FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Colophon .1.0

相关型号：