HZS7LA3 [RENESAS]

Silicon Epitaxial Planar Zener Diode for Low Noise Application; 硅外延平面齐纳二极管的低噪声应用
HZS7LA3
型号: HZS7LA3
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Planar Zener Diode for Low Noise Application
硅外延平面齐纳二极管的低噪声应用

二极管 齐纳二极管
文件: 总7页 (文件大小:74K)
中文:  中文翻译
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HZS-L Series  
Silicon Epitaxial Planar Zener Diode for  
Low Noise Application  
REJ03G0166-0200Z  
(Previous: ADE-208-121A)  
Rev.2.00  
Jan.06.2004  
Features  
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for  
stabilized power supply, etc.  
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS-L Series  
Type No.  
MHD  
Pin Arrangement  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.2.00, Jan.06.2003, page 1 of 6  
HZS-L Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
400  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
200  
Tstg  
–55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd ()  
Condition  
IZ (mA)  
0.5  
Type  
Grade  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
Min  
5.2  
5.3  
5.4  
5.5  
5.6  
5.7  
5.8  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.5  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZS6L  
5.5  
5.6  
5.7  
5.8  
5.9  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.6  
7.7  
7.9  
0.5  
1
2.0  
150  
80  
60  
60  
0.5  
0.5  
0.5  
HZS7L  
0.5  
1
3.5  
Note: 1. Tested with DC.  
Rev.2.00, Jan.06.2003, page 2 of 6  
HZS-L Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd ()  
Condition  
IZ (mA)  
0.5  
Type  
Grade  
Min  
7.7  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZS9L  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
1
8.1  
0.5  
1
6.0  
60  
7.9  
8.3  
8.1  
8.5  
8.3  
8.7  
8.5  
8.9  
8.7  
9.1  
8.9  
9.3  
9.1  
9.5  
9.3  
9.7  
HZS11L  
9.5  
9.9  
0.5  
1
8.0  
80  
0.5  
9.7  
10.1  
10.3  
10.6  
10.8  
11.1  
11.3  
11.6  
11.9  
12.1  
12.4  
12.7  
12.9  
13.1  
13.4  
13.7  
14.0  
14.3  
14.7  
15.1  
15.5  
15.9  
16.5  
17.1  
9.9  
10.2  
10.4  
10.7  
10.9  
11.1  
11.4  
11.6  
11.9  
12.2  
12.4  
12.6  
12.9  
13.2  
13.5  
13.8  
14.1  
14.5  
14.9  
15.3  
15.7  
16.3  
HZS12L  
0.5  
1
10.5  
80  
0.5  
HZS15L  
HZS16L  
0.5  
0.5  
1
1
13.0  
14.0  
80  
80  
0.5  
0.5  
2
3
1
2
3
Note: 1. Tested with DC.  
Rev.2.00, Jan.06.2003, page 3 of 6  
HZS-L Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd ()  
Condition  
IZ (mA)  
0.5  
Type  
Grade  
Min  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZS18L  
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
16.9  
17.5  
18.1  
18.8  
19.5  
20.2  
20.9  
21.6  
22.3  
22.9  
23.6  
24.3  
25.2  
26.2  
27.2  
28.2  
29.2  
30.2  
31.2  
32.2  
33.2  
34.2  
35.3  
36.4  
17.7  
18.3  
19.0  
19.7  
20.4  
21.1  
21.9  
22.6  
23.3  
24.0  
24.7  
25.5  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
33.6  
34.6  
35.7  
36.8  
38.0  
0.5  
1
15.0  
80  
HZS20L  
HZS22L  
HZS24L  
HZS27L  
HZS30L  
HZS33L  
HZS36L  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
1
1
1
1
1
1
1
18.0  
20.0  
22.0  
24.0  
27.0  
30.0  
33.0  
100  
100  
120  
150  
200  
250  
300  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
Notes: 1. Tested with DC.  
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L  
Rev.2.00, Jan.06.2003, page 4 of 6  
HZS-L Series  
Main Characteristic  
10–2  
10–3  
10–4  
10–5  
10–6  
10–7  
10–8  
0
5
10  
15  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
20  
25  
30  
35  
40  
0.10  
50  
500  
400  
300  
200  
100  
0
l
%/°C  
0.08  
40  
2.5 mm  
3 mm  
0.06  
0.04  
30  
Printed circuit board  
100 180 1.6t mm  
Quality: paper phenol  
×
×
20  
mV/°C  
0.02  
10  
l
= 5 mm  
0
0
0.02  
0.04  
0.06  
0.08  
0.10  
10  
20  
30  
40  
50  
l
=
10 mm  
(Publication value)  
0
5
10 15 20 25 30 35 40  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.2.00, Jan.06.2003, page 5 of 6  
HZS-L Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
26.0 Min  
26.0 Min  
2.4 Max  
Package Code  
JEDEC  
JEITA  
MHD  
Conforms  
Mass (reference value)  
0.084 g  
Rev.2.00, Jan.06.2003, page 6 of 6  
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