ISL6522IBZ-T_技术文档

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NS, INTERSIL RECO

FOR NEW DESIG

DATASHEET

5

PRODUCT - ISL653

DROP-IN ENHANCED

ISL6522

FN9030

Rev 8.00

Mar 10, 2006

Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller

The ISL6522 provides complete control and protection for a

DC-DC converter optimized for high-performance micro-

Features

• Drives two N-Channel MOSFETs

• Operates from +5V or +12V input

processor applications. It is designed to drive two N-Channel

MOSFETs in a synchronous rectified buck topology. The

ISL6522 integrates all of the control, output adjustment,

monitoring and protection functions into a single package.

• Simple single-loop control design

- Voltage-mode PWM control

The output voltage of the converter can be precisely

regulated to as low as 0.8V, with a maximum tolerance of

1% over temperature and line voltage variations.

• Fast transient response

- High-bandwidth error amplifier

- Full 0–100% duty ratio

The ISL6522 provides simple, single feedback loop, voltage-

mode control with fast transient response. It includes a

200kHz free-running triangle-wave oscillator that is

adjustable from below 50kHz to over 1MHz. The error

amplifier features a 15MHz gain-bandwidth product and

6V/s slew rate which enables high converter bandwidth for

fast transient performance. The resulting PWM duty ratio

ranges from 0–100%.

• Excellent output voltage regulation

- 0.8V internal reference

- 1% over line voltage and temperature

• Overcurrent fault monitor

- Does not require extra current sensing element

- Uses MOSFETs r

DS(ON)

• Converter can source and sink current

• Small converter size

The ISL6522 protects against overcurrent conditions by

inhibiting PWM operation. The ISL6522 monitors the current

- Constant frequency operation

by using the r

of the upper MOSFET which eliminates

DS(ON)

- 200kHz free-running oscillator programmable from

50kHz to over 1MHz

the need for a current sensing resistor.

• 14-lead SOIC and TSSOP package and 16-lead 5x5mm

QFN Package

SOIC, TSSOP

TOP VIEW

Pinouts

• QFN Package

14

13

12

11

10

9

RT

OCSET

SS

1

2

3

4

5

6

7

VCC

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline.

PVCC

LGATE

PGND

BOOT

UGATE

PHASE

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

COMP

FB

• Pb-free plus anneal available (RoHS compliant)

EN

8

GND

Applications

QFN

TOP VIEW

®

• Power supply for Pentium , Pentium Pro, PowerPC and

AlphaPC™ microprocessors

• High-power 5V to 3.xV DC-DC regulators

• Low-voltage distributed power supplies

16 15 14 13

SS

COMP

FB

1

2

3

4

12 PVCC

11 LGATE

GND

10

9

PGND

BOOT

EN

5

6

7

8

FN9030 Rev 8.00

Mar 10, 2006

Page 1 of 16

ISL6522

Ordering Information

Ordering Information (Continued)

PART

TEMP.

PKG.

PART

TEMP.

PKG.

NUMBER

MARKING RANGE (°C) PACKAGE

DWG. #

NUMBER

MARKING RANGE (°C) PACKAGE

DWG. #

ISL6522CB

0 to 70

14 Ld SOIC

M14.15

ISL6522CR ISL6522CR

0 to 70

16 Ld 5x5 QFN L16.5x5B

ISL6522CBZ 6522CBZ

(Note)

14 Ld SOIC

(Pb-free)

ISL6522CRZ ISL6522CRZ

(Note)

16 Ld 5x5 QFN L16.5x5B

(Pb-free)

ISL6522CBZA 6522CBZ

(Note)

0 to 70

14 Ld SOIC

(Pb-free)

M14.15

ISL6522IR

-40 to 85 16 Ld 5x5 QFN L16.5x5B

ISL6522IRZ ISL6522IRZ

(Note)

-40 to 85 16 Ld 5x5 QFN L16.5x5B

(Pb-free)

ISL6522IB

-40 to 85 14 Ld SOIC

M14.15

ISL6522IBZ 6522IBZ

(Note)

-40 to 85 14 Ld SOIC

(Pb-free)

NOTE: Intersil Pb-free plus anneal products employ special Pb-free

material sets; molding compounds/die attach materials and 100% matte

tin plate termination finish, which are RoHS compliant and compatible

with both SnPb and Pb-free soldering operations. Intersil Pb-free

products are MSL classified at Pb-free peak reflow temperatures that

meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

ISL6522CV

0 to 70

14 Ld TSSOP M14.173

ISL6522CVZ ISL6522CVZ

(Note)

14 Ld TSSOP M14.173

(Pb-free)

ISL6522IV

-40 to 85 14 Ld TSSOP M14.173

Add “-T” for tape and reel.

ISL6522IVZ ISL6522IVZ

(Note)

-40 to 85 14 Ld TSSOP M14.173

(Pb-free)

Typical Application

12V

+5V OR +12V

V

CC

OCSET

SS

MONITOR AND

PROTECTION

EN

BOOT

RT

OSC

UGATE

PHASE

ISL6522

+V

O

REF

+12V

PV

CC

LGATE

PGND

-

+

-

FB

COMP

GND

FN9030 Rev 8.00

Mar 10, 2006

Page 2 of 16

ISL6522

Block Diagram

VCC

POWER-ON

RESET (POR)

EN

SS

10A

SOFT-

START

+

-

OCSET

OVER

CURRENT

BOOT

4V

UGATE

200A

PHASE

PWM

0.8V

COMPARATOR

REF

GATE

CONTROL

LOGIC

REFERENCE

INHIBIT

PWM

+

-

PV

CC

ERROR

AMP

LGATE

PGND

GND

FB

COMP

RT

OSCILLATOR

FN9030 Rev 8.00

Mar 10, 2006

Page 3 of 16

ISL6522

Absolute Maximum Ratings

Thermal Information

Supply Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15.0V

Thermal Resistance (Typical, Note 1)



(°C/W)

 (°C/W)

JC

CC

JA

Boot Voltage, V

Input, Output or I/O Voltage . . . . . . . . . . . .GND -0.3V to V

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2

- V

. . . . . . . . . . . . . . . . . . . . . . +15.0V

BOOT

PHASE

SOIC Package (Note 1) . . . . . . . . . . . .

TSSOP Package (Note 1) . . . . . . . . . .

QFN Package (Notes 2, 3). . . . . . . . . .

67

95

36

n/a

5

+0.3V

CC

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150°C

Maximum Storage Temperature Range. . . . . . . . . . .-65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

Recommended Operating Conditions

Supply Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V 10%

CC

Ambient Temperature Range, ISL6522C. . . . . . . . . . . . 0°C to 70°C

Ambient Temperature Range, ISL6522I. . . . . . . . . . . .-40°C to 85°C

Junction Temperature Range, ISL6522C. . . . . . . . . . . 0°C to 125°C

Junction Temperature Range, ISL6522I . . . . . . . . . .-40°C to 125°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1.  is measured with the component mounted on a highs effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

JA

2.  is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. SeeTech

JA

Brief TB379.

3. For  , the "case temp" location is the center of the exposed metal pad on the package underside.

JC

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

V

SUPPLY CURRENT

CC

Nominal Supply

I

EN = V ; UGATE and LGATE Open

CC

-

5

-

mA

CC

Shutdown Supply

POWER-ON RESET

EN = 0V

50

100

A

Rising V

Threshold

V

= 4.5VDC

-

10.4

-

V

CC

OCSET

Falling V

8.1

0.8

-

CC

Enable-Input Threshold Voltage

ISL6522C, V

= 4.5VDC

-

2.0

2.1

-

OCSET

ISL6522I, V

= 4.5VDC

OCSET

Rising V

Threshold

1.27

OCSET

OSCILLATOR

Free Running Frequency

ISL6522C, R = OPEN, V

= 12

CC

175

160

-20

-

200

-

230

+20

-

kHz

%

T

ISL6522I, R = OPEN, V

= 12

T

CC

Total Variation

6k < R to GND < 200k

T

Ramp Amplitude

V

R

= OPEN

1.9

V

P-P

OSC

T

REFERENCE

Reference Voltage Tolerance

V

Commercial

Industrial

-1

-2

-

1

+1

-

%

V

REF

Reference Voltage

ERROR AMPLIFIER

DC Gain

0.800

-

88

15

6

-

dB

Gain-Bandwidth Product

Slew Rate

GBW

SR

MHz

V/s

COMP = 10pF

GATE DRIVERS

Upper Gate Source

I

V

- V

PHASE

= 12V, V

= 6V

350

500

-

mA

UGATE

BOOT

UGATE

FN9030 Rev 8.00

Mar 10, 2006

Page 4 of 16

ISL6522

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted (Continued)

PARAMETER

Upper Gate Sink

SYMBOL

TEST CONDITIONS

= 0.3A

MIN

TYP

5.5

450

3.5

MAX

10

UNITS

R

ISL6522C, I

-



UGATE

LGATE

= 0.3A

ISL6522I, I

-

7.2

-

LGATE

Lower Gate Source

Lower Gate Sink

I

V

= 12V, V

= 6V

300

mA



LGATE

CC

LGATE

R

ISL6522C, I

= 0.3A

-

6.5

4.5

LGATE

= 0.3A

ISL6522I, I



LGATE

PROTECTION

OCSET Current Source

Soft-Start Current

I

V

= 4.5VDC

170

-

200

10

230

-

A

OCSET

I

SS

Typical Performance Curves

80

70

60

50

40

30

20

10

0

R

PULLUP

TO +12V

T

1000

100

10

C

= 3300pF

GATE

R

PULLDOWN

C

= 1000pF

T

GATE

TO V

SS

C

= 10pF

GATE

100 200 300 400 500 600 700 800 900 1000

10

100

SWITCHING FREQUENCY (kHz)

1000

SWITCHING FREQUENCY (kHz)

FIGURE 1. R RESISTANCE vs FREQUENCY

FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY

T

RT

Functional Pin Descriptions

This pin provides oscillator switching frequency adjustment.

SOIC

and

TSSOP

14

13

12

11

10

9

1

2

3

4

5

6

7

RT

OCSET

SS

VCC

By placing a resistor (R ) from this pin to GND, the nominal

T

PVCC

LGATE

PGND

BOOT

UGATE

PHASE

200kHz switching frequency is increased according to the

following equation:

COMP

FB

6

5  10

Fs  200kHz + ------------------

(R to GND)

R

T

EN

8

GND

Conversely, connecting a pull-up resistor (R ) from this pin

T

to V

reduces the switching frequency according to the

CC

following equation:

QFN

7

4  10

Fs  200kHz – ------------------

16 15 14 13

(R to 12V)

T

R

T

SS

COMP

FB

1

2

3

4

12 PVCC

11 LGATE

GND

10

9

PGND

BOOT

EN

5

6

7

8

FN9030 Rev 8.00

Mar 10, 2006

Page 5 of 16

ISL6522

OCSET

LGATE

Connect a resistor (R

) from this pin to the drain of the

, an internal 200A current source

Connect LGATE to the lower MOSFET gate. This pin provides

the gate drive for the lower MOSFET. This pin is also

monitored by the adaptive shoot through protection circuitry to

determine when the lower MOSFET has turned off.

OCSET

upper MOSFET. R

(I

OCSET

), and the upper MOSFET on-resistance (r

OCS DS(ON)

) set

the converter overcurrent (OC) trip point according to the

following equation:

PVCC

I

 R

OCSET

OCS

Provide a bias supply for the lower gate drive to this pin.

I

= -------------------------------------------

PEAK

r

DSON

VCC

An overcurrent trip cycles the soft-start function.

Provide a 12V bias supply for the chip to this pin.

SS

Functional Description

Connect a capacitor from this pin to ground. This capacitor,

along with an internal 10A current source, sets the soft-start

interval of the converter.

Initialization

The ISL6522 automatically initializes upon receipt of power.

Special sequencing of the input supplies is not necessary.

The Power-On Reset (POR) function continually monitors

the input supply voltages and the enable (EN) pin. The POR

monitors the bias voltage at the VCC pin and the input

COMP and FB

COMP and FB are the available external pins of the error

amplifier. The FB pin is the inverting input of the error

amplifier and the COMP pin is the error amplifier output.

These pins are used to compensate the voltage-control

feedback loop of the converter.

voltage (V ) on the OCSET pin. The level on OCSET is

IN

equal to V Less a fixed voltage drop (see overcurrent

IN

protection). With the EN pin held to V , the POR function

CC

EN

initiates soft-start operation after both input supply voltages

exceed their POR thresholds. For operation with a single

This pin is the open-collector enable pin. Pull this pin below

1V to disable the converter. In shutdown, the soft-start pin is

discharged and the UGATE and LGATE pins are held low.

+12V power source, V and V

are equivalent and the

IN

CC

+12V power source must exceed the rising V

before POR initiates operation.

threshold

CC

GND

The POR function inhibits operation with the chip disabled

(EN pin low). With both input supplies above their POR

thresholds, transitioning the EN pin high initiates a soft-start

interval.

Signal ground for the IC. All voltage levels are measured

with respect to this pin.

PHASE

Connect the PHASE pin to the upper MOSFET source. This

pin is used to monitor the voltage drop across the MOSFET

for overcurrent protection. This pin also provides the return

path for the upper gate drive.

Soft-Start

The POR function initiates the soft-start sequence. An internal

10A current source charges an external capacitor (C ) on

the SS pin to 4V. Soft-start clamps the error amplifier output

SS

UGATE

(COMP pin) to the SS pin voltage. Figure 3 shows the soft-

start interval. At t in Figure 3, the SS and COMP voltages

1

Connect UGATE to the upper MOSFET gate. This pin

provides the gate drive for the upper MOSFET. This pin is also

monitored by the adaptive shoot through protection circuitry to

determine when the upper MOSFET has turned off.

reach the valley of the oscillator’s triangle wave. The

oscillator’s triangular waveform is compared to the ramping

error amplifier voltage. This generates PHASE pulses of

increasing width that charge the output capacitor(s). This

interval of increasing pulse width continues to t2, at which

point the output is in regulation and the clamp on the COMP

pin is released. This method provides a rapid and controlled

output voltage rise.

BOOT

This pin provides bias voltage to the upper MOSFET driver.

A bootstrap circuit may be used to create a BOOT voltage

suitable to drive a standard N-Channel MOSFET.

PGND

This is the power ground connection. Tie the lower MOSFET

source to this pin.

FN9030 Rev 8.00

Mar 10, 2006

Page 6 of 16

ISL6522

is reference to V . When the voltage across the upper

IN

VOLTAGE

MOSFET (also referenced to V ) exceeds the voltage

IN

V

across R

, the overcurrent function initiates a soft-start

SOFT START

OCSET

sequence. The soft-start function discharges C with a

SS

10A current sink and inhibits PWM operation. The soft-start

function recharges C , and PWM operation resumes with

the error amplifier clamped to the SS voltage. Should an

SS

V

OUT

overload occur while recharging C , the soft-start function

inhibits PWM operation while fully charging C to 4V to

SS

V

COMP

complete its cycle. Figure 4 shows this operation with an

V

OSC(MIN)

overload condition. Note that the inductor current increases

to over 15A during the C charging interval and causes an

SS

overcurrent trip. The converter dissipates very little power

with this method. The measured input power for the

conditions of Figure 4 is 2.5W.

CLAMP ON V

STEADY STATE

RELEASED AT

TIME

COMP

t

0

2

1

C

SS

The overcurrent function will trip at a peak inductor current

-----------

t

=

 V

1

OSCMIN

I

SS

(I

determined by:

PEAK)

V

OUT

C

SS

SteadyState

----------- ------------------------------------------------

 V

OSC

= t – t

=



I

 R

OCSET

SoftStart

2

1

OCSET

I

V

I

= ---------------------------------------------------

SS

IN

PEAK

r

DSON

C

I

= Soft Start Capacitor

Where:

SS

= Soft Start Current = 10A

where I

is the internal OCSET current source (200A

SS

OCSET

V

= Bottom of Oscillator = 1.35V

is typical). The OC trip point varies mainly due to the

MOSFETs r variations. To avoid overcurrent tripping

OSC(MIN)

= Input Voltage

IN

DS(ON)

V

V

= Peak to Peak Oscillator Voltage = 1.9V

in the normal operating load range, find the R

from the equation above with:

resistor

OSC

OCSET

= Steady State Output Voltage

OUTSteadyState

The maximum r

DS(ON)

at the highest junction temperature.

FIGURE 3. SOFT-START INTERVAL

1. The minimum I

2. Determine I

from the specification table.

OCSET

for I

 I

PEAK

+ I  2 ,

PEAK

where I is the output inducto^Or ^Uri^Tp^p^Mle^AXcu^rrent.

4V

2V

0V

For an equation for the ripple current see the section under

component guidelines titled Output Inductor Selection.

A small ceramic capacitor should be placed in parallel with

R

to smooth the voltage across R in the

OCSET

15A

presence of switching noise on the input voltage.

10A

5A

Current Sinking

The ISL6522 incorporates a MOSFET shoot-through

protection method which allows a converter to sink current

as well as source current. Care should be exercised when

designing a converter with the ISL6522 when it is known that

the converter may sink current.

0A

TIME (20ms/DIV)

FIGURE 4. OVERCURRENT OPERATION

When the converter is sinking current, it is behaving as a boost

converter that is regulating its input voltage. This means that

Overcurrent Protection

The overcurrent function protects the converter from a

shorted output by using the upper MOSFETs on-resistance,

the converter is boosting current into the V rail, the voltage

IN

that is being down-converted. If there is nowhere for this current

to go, such as to other distributed loads on the V rail, through

IN

r

to monitor the current. This method enhances the

DS(ON)

a voltage limiting protection device, or other methods, the

converter’s efficiency and reduces cost by eliminating a

current sensing resistor.

capacitance on the V bus will absorb the current. This

IN

situation will cause the voltage level of the V rail to increase. If

IN

The overcurrent function cycles the soft-start function in a

the voltage level of the rail is boosted to a level that exceeds the

maximum voltage rating of the MOSFETs or the input

capacitors, damage may occur to these parts. If the bias

hiccup mode to provide fault protection. A resistor (R

)

OCSET

programs the overcurrent trip level. An internal 200A

(typical) current sink develops a voltage across R

that

OCSET

voltage for the ISL6522 comes from the V rail, then the

IN

FN9030 Rev 8.00

Mar 10, 2006

Page 7 of 16

ISL6522

maximum voltage rating of the ISL6522 may be exceeded and

the IC will experience a catastrophic failure and the converter

will no longer be operational. Ensuring that there is a path for

the current to follow other than the capacitance on the rail will

prevent these failure modes.

+V

Q1

IN

BOOT

D1

C

L

O

BOOT

PHASE

+12V

VCC

V

OUT

ISL6522

SS

C

Q2

O

Application Guidelines

Layout Considerations

C

VCC

C

SS

As in any high frequency switching converter, layout is very

important. Switching current from one power device to

another can generate voltage transients across the

impedances of the interconnecting bond wires and circuit

traces. These interconnecting impedances should be

minimized by using wide, short printed circuit traces. The

critical components should be located as close together as

possible using ground plane construction or single point

grounding.

GND

FIGURE 6. PRINTED CIRCUIT BOARD SMALL SIGNAL

LAYOUT GUIDELINES

Feedback Compensation

Figure 7 highlights the voltage-mode control loop for a

synchronous rectified buck converter. The output voltage

(V ) is regulated to the reference voltage level. The error

Figure 5 shows the critical power components of the

converter. To minimize the voltage overshoot the

OUT

amplifier (error amp) output (V ) is compared with the

E/A

oscillator (OSC) triangular wave to provide a pulse-width

interconnecting wires indicated by heavy lines should be part

of ground or power plane in a printed circuit board. The

components shown in Figure 6 should be located as close

modulated (PWM) wave with an amplitude of V at the

IN

PHASE node. The PWM wave is smoothed by the output filter

(L and C ).

together as possible. Please note that the capacitors C

O

IN

and C each represent numerous physical capacitors.

O

The modulator transfer function is the small-signal transfer

function of V /V . This function is dominated by a DC

Locate the ISL6522 within three inches of the MOSFETs, Q1

and Q2. The circuit traces for the MOSFETs’ gate and

source connections from the ISL6522 must be sized to

handle up to 1A peak current.

OUT E/A

gain and the output filter (L and C ), with a double pole

O

break frequency at F and a zero at F

. The DC gain of

LC ESR

the modulator is simply the input voltage (V ) divided by the

IN

peak-to-peak oscillator voltage V

.

OSC

V

IN

ISL6522

UGATE

Q1

Q2

L

O

V

OUT

PHASE

C

IN

C

D2

O

LGATE

PGND

RETURN

FIGURE 5. PRINTED CIRCUIT BOARD POWER AND

GROUND PLANES OR ISLANDS

Figure 6 shows the circuit traces that require additional

layout consideration. Use single point and ground plane

construction for the circuits shown. Minimize any leakage

current paths on the SS PIN and locate the capacitor, C

SS

close to the SS pin because the internal current source is

only 10A. Provide local V decoupling between VCC and

CC

GND pins. Locate the capacitor, C

as close as practical

BOOT

to the BOOT and PHASE pins.

FN9030 Rev 8.00

Mar 10, 2006

Page 8 of 16

ISL6522

ST

4. Place 1 Pole at the ESR Zero

V

IN

ND

OSC

DRIVER

5. Place 2

Pole at Half the Switching Frequency

PWM

6. Check Gain against Error Amplifier’s Open-Loop Gain

7. Estimate Phase Margin - Repeat if Necessary

L

O

COMPARATOR

V

OUT

-

PHASE

+

V

OSC

C

O

Figure 8 shows an asymptotic plot of the DC-DC converter’s

gain vs. frequency. The actual modulator gain has a high gain

peak due to the high Q factor of the output filter and is not

shown in Figure 8. Using the above guidelines should give a

compensation gain similar to the curve plotted. The open loop

error amplifier gain bounds the compensation gain. Check the

ESR

(PARASITIC)

Z

FB

V

E/A

Z

-

IN

+

REFERENCE

ERROR

AMP

compensation gain at F with the capabilities of the error

P2

amplifier. The closed loop gain is constructed on the log-log

graph of Figure 8 by adding the modulator gain (in dB) to the

compensation gain (in dB). This is equivalent to multiplying

the modulator transfer function to the compensation transfer

function and plotting the gain.

DETAILED COMPENSATION COMPONENTS

Z

FB

V

OUT

C2

Z

IN

100

C1

C3

R3

R2

F

P1

F

Z2

Z1

P2

80

60

40

20

0

R1

OPEN LOOP

ERROR AMP GAIN

COMP

FB

-

+

20LOG

(R2/R1)

20LOG

ISL6522

(V /V

)

OSC

REF

IN

COMPENSATION

GAIN

MODULATOR

GAIN

-20

-40

-60

FIGURE 7. VOLTAGE - MODE BUCK CONVERTER

COMPENSATION DESIGN

CLOSED LOOP

GAIN

F

LC

F

ESR

10

100

1K

10K

100K

1M

10M

Modulator Break Frequency Equations

FREQUENCY (Hz)

1

F

= --------------------------------------

F

= --------------------------------------------

ESR

LC

FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN

2  ESR  C



2 

L  C

O O

O

The compensation gain uses external impedance networks

The compensation network consists of the error amplifier

(internal to the ISL6522) and the impedance networks Z

Z

and Z to provide a stable, high bandwidth (BW) overall

FB

IN

loop. A stable control loop has a gain crossing with

-20dB/decade slope and a phase margin greater than 45

degrees. Include worst case component variations when

determining phase margin.

and Z . The goal of the compensation network is to provide

FB

a closed loop transfer function with the highest 0dB crossing

frequency (f

) and adequate phase margin. Phase margin

is the difference between the closed loop phase at f and

0dB

180 degrees The equations below relate the compensation

network’s poles, zeros and gain to the components (R1, R2,

R3, C1, C2, and C3) in Figure 8. Use these guidelines for

locating the poles and zeros of the compensation network:

Component Selection Guidelines

Output Capacitor Selection

An output capacitor is required to filter the output and supply

the load transient current. The filtering requirements are a

function of the switching frequency and the ripple current.

The load transient requirements are a function of the slew

rate (di/dt) and the magnitude of the transient load current.

These requirements are generally met with a mix of

capacitors and careful layout.

Compensation Break Frequency Equations

1

F

= ----------------------------------

F

= ------------------------------------------------------

Z1

P1

2  R2  C1

C1  C2





----------------------

2  R2 





C1 + C2

1

----------------------------------

F

= -----------------------------------------------------

F

=

Z2

P2

2  R3  C3

2  R1 + R3  C3

Modern microprocessors produce transient load rates above

1A/ns. High frequency capacitors initially supply the transient

and slow the current load rate seen by the bulk capacitors.

The bulk filter capacitor values are generally determined by

1. Pick Gain (R2/R1) for desired converter bandwidth

ST

2. Place 1 Zero Below Filter’s Double Pole

(~75% F

ND

3. Place 2

)

LC

Zero at Filter’s Double Pole

FN9030 Rev 8.00

Mar 10, 2006

Page 9 of 16

ISL6522

the ESR (effective series resistance) and voltage rating

requirements rather than actual capacitance requirements.

equations give the approximate response time interval for

application and removal of a transient load:

L

 I

L  I

O TRAN

O

TRAN

High frequency decoupling capacitors should be placed as

close to the power pins of the load as physically possible. Be

careful not to add inductance in the circuit board wiring that

could cancel the usefulness of these low inductance

components. Consult with the manufacturer of the load on

specific decoupling requirements. For example, Intel

recommends that the high frequency decoupling for the

Pentium-Pro be composed of at least forty (40) 1.0F

ceramic capacitors in the 1206 surface-mount package.

t

= -------------------------------

t

= ------------------------------

RISE

FALL

V

– V

V

IN

OUT

where: I

is the transient load current step, t

is the

TRAN

response time to the application of load, and t

RISE

is the

FALL

response time to the removal of load. With a +5V input

source, the worst case response time can be either at the

application or removal of load and dependent upon the

output voltage setting. Be sure to check both of these

equations at the minimum and maximum output levels for

the worst case response time.

Use only specialized low-ESR capacitors intended for

switching-regulator applications for the bulk capacitors. The

bulk capacitor’s ESR will determine the output ripple voltage

and the initial voltage drop after a high slew-rate transient. An

aluminum electrolytic capacitor’s ESR value is related to the

case size with lower ESR available in larger case sizes.

However, the equivalent series inductance (ESL) of these

capacitors increases with case size and can reduce the

usefulness of the capacitor to high slew-rate transient loading.

Unfortunately, ESL is not a specified parameter. Work with

your capacitor supplier and measure the capacitor’s

Input Capacitor Selection

Use a mix of input bypass capacitors to control the voltage

overshoot across the MOSFETs. Use small ceramic

capacitors for high frequency decoupling and bulk capacitors

to supply the current needed each time Q1 turns on. Place the

small ceramic capacitors physically close to the MOSFETs

and between the drain of Q1 and the source of Q2.

The important parameters for the bulk input capacitor are the

voltage rating and the RMS current rating. For reliable

operation, select the bulk capacitor with voltage and current

ratings above the maximum input voltage and largest RMS

current required by the circuit. The capacitor voltage rating

should be at least 1.25 times greater than the maximum

input voltage and a voltage rating of 1.5 times is a

conservative guideline. The RMS current rating requirement

for the input capacitor of a buck regulator is approximately

1/2 the DC load current.

impedance with frequency to select a suitable component. In

most cases, multiple electrolytic capacitors of small case size

perform better than a single large case capacitor.

Output Inductor Selection

The output inductor is selected to meet the output voltage

ripple requirements and minimize the converter’s response

time to the load transient. The inductor value determines the

converter’s ripple current and the ripple voltage is a function

of the ripple current. The ripple voltage and current are

approximated by the following equations:

For a through-hole design, several electrolytic capacitors

(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX

or equivalent) may be needed. For surface mount designs,

solid tantalum capacitors can be used, but caution must be

exercised with regard to the capacitor surge current rating.

These capacitors must be capable of handling the surge-

current at power-up. The TPS series available from AVX, and

the 593D series from Sprague are both surge current tested.

V

- V

V

OUT

V

IN

OUT

------------------------------- ---------------

I =



V

= I x ESR

OUT

Fs x L

Increasing the value of inductance reduces the ripple current

and voltage. However, the large inductance values reduce

the converter’s response time to a load transient.

MOSFET Selection/Considerations

The ISL6522 requires two N-Channel power MOSFETs.

One of the parameters limiting the converter’s response to a

load transient is the time required to change the inductor

current. Given a sufficiently fast control loop design, the

ISL6522 will provide either 0% or 100% duty cycle in response

to a load transient. The response time is the time required to

slew the inductor current from an initial current value to the

transient current level. During this interval the difference

between the inductor current and the transient current level

must be supplied by the output capacitor. Minimizing the

response time can minimize the output capacitance required.

These should be selected based upon r

, gate supply

DS(ON)

requirements, and thermal management requirements.

In high-current applications, the MOSFET power dissipation,

package selection and heatsink are the dominant design

factors. The power dissipation includes two loss

components; conduction loss and switching loss. The

conduction losses are the largest component of power

dissipation for both the upper and the lower MOSFETs.

These losses are distributed between the two MOSFETs

according to duty factor. The switching losses seen when

sourcing current will be different from the switching losses seen

when sinking current. When sourcing current, the upper

MOSFET realizes most of the switching losses. The lower

The response time to a transient is different for the

application of load and the removal of load. The following

FN9030 Rev 8.00

Mar 10, 2006

Page 10 of 16

ISL6522

switch realizes most of the switching losses when the converter

is sinking current (see the equations below).

D

BOOT

+12V

VCC

+5V OR +12V

-

+

V

D

Losses while Sourcing Current

2

1

2

BOOT

--

 D +  Io  V  t

P

= Io  r

 F

SW

UPPER

DSON

IN

S

ISL6522

C

BOOT

2

Q1

P

= Io x r

x (1 - D)

DS(ON)

LOWER

UGATE

PHASE

NOTE:

V

_G-S V - V

CC

D

Losses while Sinking Current

2

P

= Io x r

x D

UPPER

DS(ON)

+5V

OR +12V

2

1

2

PVCC

--

 1 – D +  Io  V  t

P

= Io  r

 F

SW S

LOWER

DSON

IN

D2

Q2

Where: D is the duty cycle = V

/ V ,

OUT

IN

LGATE

PGND

-

NOTE:

_G-S PVCC

t

is the switching interval, and

is the switching frequency.

+

SW

V

F

S

GND

These equations assume linear voltage-current transitions

and do not adequately model power loss due the reverse-

recovery of the upper and lower MOSFET’s body diode. The

gate-charge losses are dissipated by the ISL6522 and do not

heat the MOSFETs. However, large gate-charge increases

FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION

Figure 10 shows the upper gate drive supplied by a direct

connection to V . This option should only be used in

CC

converter systems where the main input voltage is +5V

or

DC

the switching interval, t

which increases the upper

SW

less. The peak upper gate-to-source voltage is approximately

less the input supply. For +5V main power and +12V

MOSFET switching losses. Ensure that both MOSFETs are

within their maximum junction temperature at high ambient

temperature by calculating the temperature rise according to

package thermal-resistance specifications. A separate

heatsink may be necessary depending upon MOSFET

power, package type, ambient temperature and air flow.

V

CC

DC

for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level

MOSFET is a good choice for Q1 and a logic-level MOSFET

can be used for Q2 if its absolute gate-to-source voltage rating

exceeds the maximum voltage applied to PV

.

CC

+12V

Standard-gate MOSFETs are normally recommended for

use with the ISL6522. However, logic-level gate MOSFETs

can be used under special circumstances. The input voltage,

upper gate drive level, and the MOSFETs absolute gate-to-

source voltage rating determine whether logic-level

MOSFETs are appropriate.

+5V OR LESS

VCC

BOOT

ISL6522

Q1

UGATE

PHASE

NOTE:

_G-S V - 5V

V

CC

Figure 9 shows the upper gate drive (BOOT pin) supplied by

a bootstrap circuit from V . The boot capacitor, C

develops a floating supply voltage referenced to the PHASE

+5V

OR +12V

CC

BOOT

PVCC

pin. This supply is refreshed each cycle to a voltage of V

less the boot diode drop (V ) when the lower MOSFET, Q2

D

turns on. A logic-level MOSFET can only be used for Q1 if

D2

CC

Q2

LGATE

PGND

-

NOTE:

_G-S PVCC

+

V

the MOSFETs absolute gate-to-source voltage rating

exceeds the maximum voltage applied to V . For Q2, a

CC

GND

logic-level MOSFET can be used if its absolute gate-to-

source voltage rating exceeds the maximum voltage applied

to PVCC.

FIGURE 10. UPPER GATE DRIVE - DIRECT V

DRIVE OPTION

CC

Schottky Selection

Rectifier D2 is a clamp that catches the negative inductor

swing during the dead time between turning off the lower

MOSFET and turning on the upper MOSFET. The diode must

be a Schottky type to prevent the lossy parasitic MOSFET

body diode from conducting. It is acceptable to omit the diode

and let the body diode of the lower MOSFET clamp the

negative inductor swing, but efficiency will drop one or two

percent as a result. The diode's rated reverse breakdown

voltage must be greater than the maximum input voltage.

FN9030 Rev 8.00

Mar 10, 2006

Page 11 of 16

ISL6522

implemented using the ISL6522 controller without any

modifications. Detailed information on the circuit, including a

complete bill of materials and circuit board description, can be

found in Application Note AN9722. See Intersil’s home page on

the web: http://www.intersil.com.

ISL6522 DC-DC Converter Application

Circuit

Figure 11 shows a DC-DC converter circuit for a

microprocessor application, originally designed to employ the

HIP6006 controller. Given the similarities between the

HIP6006 and ISL6522 controllers, the circuit can be

12V

CC

V

IN

C17-18

2x 1F

1206

C1-3

3x 680F

RTN

C12

1F

C19

R7

10K

1206

VCC

14

1000pF

R6

CR1

4148

OCSET

2

6

ENABLE

MONITOR AND

PROTECTION

SS

RT

3

3.01K

Q1

PHASE

TP2

10 BOOT

1

C20

0.1F

9

UGATE

OSC

L1

R1

SPARE

C13

0.1F

U1

ISL6522

PHASE

PVCC

8

REF

V

OUT

13

CR2

Q2

LGATE

PGND

C6-9

4x 1000F

-

12

11

-

+

--

MBR

340

+

5

FB

+

RTN

4

7

R2

1K

GND

JP1

COMP

C14

33pF

C15

R5

COMP

TP1

15K

0.01F

C16

SPARE

R4

SPARE

R3

1K

Component Selection Notes:

C1-C3 - Three each 680F 25W VDC, Sanyo MV-GX or equivalent.

C6-C9 - Four each 1000F 6.3W VDC, Sanyo MV-GX or equivalent.

L1 - Core: micrometals T50-52B; winding: ten turns of 17AWG.

CR1 - 1N4148 or equivalent.

CR2 - 3A, 40V Schottky, Motorola MBR340 or equivalent.

Q1, Q2 - Fairchild MOSFET; RFP25N05

FIGURE 11. DC-DC CONVERTER APPLICATION CIRCUIT

FN9030 Rev 8.00

Mar 10, 2006

Page 12 of 16

ISL6522

All trademarks and registered trademarks are the property of their respective owners.

For additional products, see www.intersil.com/en/products.html

Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted

in the quality certifications found at www.intersil.com/en/support/qualandreliability.html

Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such

modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are

current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its

subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN9030 Rev 8.00

Mar 10, 2006

Page 13 of 16

ISL6522

Small Outline Plastic Packages (SOIC)

M14.15 (JEDEC MS-012-AB ISSUE C)

14 LEAD NARROW BODY SMALL OUTLINE PLASTIC

PACKAGE

N

INDEX

AREA

0.25(0.010)

M

B M

H

E

INCHES

MILLIMETERS

-B-

SYMBOL

MIN

MAX

MIN

1.35

0.10

0.33

0.19

8.55

3.80

MAX

1.75

0.25

0.51

0.25

8.75

4.00

NOTES

A

A1

B

C

D

E

e

0.0532

0.0040

0.013

0.0688

0.0098

0.020

-

1

2

3

L

-

SEATING PLANE

A

9

0.0075

0.3367

0.1497

0.0098

0.3444

0.1574

-

-A-

o

h x 45

D

3

4

-C-



0.050 BSC

1.27 BSC

-

e

A1

C

H

h

0.2284

0.0099

0.016

0.2440

0.0196

0.050

5.80

0.25

0.40

6.20

0.50

1.27

-

B

0.10(0.004)

5

0.25(0.010) M

C

A M B S

L

6

N



14

7

NOTES:

o

0

8

0

8

-

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of

Publication Number 95.

Rev. 0 12/93

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006

inch) per side.

4. Dimension“E”doesnotincludeinterleadflashorprotrusions. Interlead

flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater

above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions

are not necessarily exact.

FN9030 Rev 8.00

Mar 10, 2006

Page 14 of 16

ISL6522

Thin Shrink Small Outline Plastic Packages (TSSOP)

M14.173

N

14 LEAD THIN SHRINK SMALL OUTLINE PLASTIC

PACKAGE

INDEX

AREA

0.25(0.010)

M

B M

E

E1

-B-

GAUGE

PLANE

INCHES

MIN

MILLIMETERS

SYMBOL

MAX

0.047

0.006

0.051

0.0118

0.0079

0.199

0.177

MIN

-

MAX

1.20

0.15

1.05

0.30

0.20

5.05

4.50

NOTES

A

A1

A2

b

-

1

2

3

0.002

0.031

0.0075

0.0035

0.195

0.169

0.05

0.80

0.19

0.09

4.95

4.30

-

L

0.25

0.010

0.05(0.002)

SEATING PLANE

A

-

-A-

9

D

c

-

-C-

D

3



E1

e

4

A2

e

A1

c

0.026 BSC

0.65 BSC

-

b

0.10(0.004)

E

0.246

0.256

6.25

0.45

6.50

0.75

-

0.10(0.004) M

C

A M B S

L

0.0177

0.0295

6

N

14

7

NOTES:

o

0

8

0

8

-



1. These package dimensions are within allowable dimensions of

JEDEC MO-153-AC, Issue E.

Rev. 1 6/00

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm

(0.006 inch) per side.

4. Dimension “E1” does not include interlead flash or protrusions. Inter-

lead flash and protrusions shall not exceed 0.15mm (0.006 inch) per

side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. Dimension “b” does not include dambar protrusion. Allowable dambar

protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimen-

sion at maximum material condition. Minimum space between protru-

sion and adjacent lead is 0.07mm (0.0027 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions

are not necessarily exact. (Angles in degrees)

FN9030 Rev 8.00

Mar 10, 2006

Page 15 of 16

ISL6522

Quad Flat No-Lead Plastic Package (QFN)

Micro Lead Frame Plastic Package (MLFP)

L16.5x5B

16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE

(COMPLIANT TO JEDEC MO-220VHHB ISSUE C)

MILLIMETERS

SYMBOL

MIN

NOMINAL

MAX

1.00

0.05

1.00

NOTES

A

A1

A2

A3

b

0.80

0.90

-

9

0.20 REF

9

0.28

2.95

0.33

0.40

3.25

5, 8

D

5.00 BSC

-

D1

D2

E

4.75 BSC

9

3.10

7, 8

5.00 BSC

-

E1

E2

e

4.75 BSC

9

3.10

7, 8

0.80 BSC

-

k

0.25

0.35

-

L

0.60

0.75

0.15

8

L1

N

-

16

4

-

10

2

Nd

Ne

P

3

-

0.60

12

9



-

9

Rev. 1 10/02

NOTES:

1. Dimensioning and tolerancing conform to ASME Y14.5-1994.

2. N is the number of terminals.

3. Nd and Ne refer to the number of terminals on each D and E.

4. All dimensions are in millimeters. Angles are in degrees.

5. Dimension b applies to the metallized terminal and is measured

between 0.15mm and 0.30mm from the terminal tip.

6. The configuration of the pin #1 identifier is optional, but must be

located within the zone indicated. The pin #1 identifier may be

either a mold or mark feature.

7. Dimensions D2 and E2 are for the exposed pads which provide

improved electrical and thermal performance.

8. Nominal dimensionsare providedtoassist with PCB LandPattern

Design efforts, see Intersil Technical Brief TB389.

9. Features and dimensions A2, A3, D1, E1, P &  are present when

Anvil singulation method is used and not present for saw

singulation.

10. Depending on the method of lead termination at the edge of the

package, a maximum 0.15mm pull back (L1) maybe present. L

minus L1 to be equal to or greater than 0.3mm.

FN9030 Rev 8.00

Mar 10, 2006

Page 16 of 16


型号：	ISL6522IBZ-T
厂家：	RENESAS TECHNOLOGY CORP
描述：	Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller; QFN16, SOIC14, TSSOP14; Temp Range: See Datasheet 开关光电二极管
文件：	总16页 (文件大小：818K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISL6522IBZ-T [RENESAS]

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