ISL8201MIRZ-T [RENESAS]
10A, High Efficiency DC/DC Module; MODULE15; Temp Range: -40° to 85°C;型号: | ISL8201MIRZ-T |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 10A, High Efficiency DC/DC Module; MODULE15; Temp Range: -40° to 85°C 开关 |
文件: | 总16页 (文件大小:1350K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATASHEET
ISL8201M
10A, High Efficiency DC/DC Module
FN6657
Rev 3.00
October 28, 2014
The ISL8201M is a 20V, 10A output current, variable output
step-down power supply. Included in the 15mmx15mm
package is a high performance PWM controller switching at
600kHz, power MOSFETs, an inductor, and all the passive
components required for complete DC/DC power solution.
The ISL8201M operates over an input voltage range of 1V to
20V and supports an output voltage range of 0.6V to 5V,
which is set by a single dividing resistor. This high efficiency
power module is capable of delivering 10A (17A peak) output
with up to 95% efficiency, needing no heat sinks or airflow to
meet power specifications. Only bulk input and output
capacitors are needed to finish the design. Utilizing
voltage-mode control, the output voltage can be precisely
regulated to as low as 0.6V with up to ±1% output voltage
regulation. The ISL8201M also features internal
Features
• Complete Switch Mode Power Supply
• Bias Voltage Range from +4.5 to +14.4V
- Wide Input Voltage Range from 1V up to 20V (see
“Input Voltage Considerations” on page 11)
• 10A DC Output Current, 17A Peak Output Current
• Adjustable +0.6V to +5V Output Range
• Up to 95% Efficiency
• Simple Voltage Mode Control
• Fixed 600kHz Switching Frequency
• Fast Transient Response
• Enable Function Option
compensation, internal soft-start, auto-recovery overcurrent
protection, an enable option, and pre-biased output start-up
capability.
• Pre-biased Output Start-up Capability
• Internal Soft-Start
The ISL8201M is packaged in a thermally enhanced, compact
(15mmx15mm) and low profile (3.5mm) overmolded QFN
Package Module suitable for automated assembly by
standard surface mount equipment. The ISL8201M is RoHS
compliant.
• Overcurrent Protection by Low-Side MOSFET rDS(ON)
Sensing (Non-Latching, Auto-Recovery)
• Small Footprint, Low Profile Surface Mount QFN Package
(15mmx15mmx3.5mm)
• RoHS Compliant
Typical Schematic
Applications
(+5V/+12V)
PVCC
OR
• Servers
(+6.5V TO 14.4V) CPVCC
• Industrial Equipment
VOUT
• Point of Load Regulation
• Other General Purpose Step-Down DC/DC
• Telecom and Datacom Applications
(+4.5V TO +20V)
PVCC
1.8V
VIN
10A
VIN
VOUT
CIN
COUT
ISL8201M
FB
PGND
RFB
4.87k
FN6657 Rev 3.00
October 28, 2014
Page 1 of 16
ISL8201M
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
PACKAGE
(RoHS Compliant)
PART MARKING
ISL8201M
Evaluation Board
PKG. DWG. #
L15.15x15
ISL8201MIRZ
15 Ld QFN
ISL8201MEVAL1Z
1. Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil plastic packaged products are RoHS compliant by EU exemption 7C-I and employ special Pb-free material sets, molding
compounds/die attach materials, and 100% matte tin plate plus anneal (e3) termination finish which is compatible with both SnPb and Pb-free
soldering operations. Intersil RoHS compliant products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-
free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see product information page for ISL8201M. For more information on MSL please see techbrief
TB363.
Simplified Block Diagram
PVCC
VIN
SAMPLE
AND
HOLD
POR
AND
SOFT-START
PGND
LDO
DRIVER
-
INHIBIT
+
21.5µA
ISET
0.6V
VOUT
+
-
GATE
FB
PWM
+
-
CONTROL
LOGIC
PVCC
0.4V
+
DIS
DRIVER
-
OSCILLATOR
COMP/EN
RSET-IN
PGND
PWM Controller
RFB-TI
ISET
PHASE
FIGURE 1. INTERNAL BLOCK DIAGRAM
FN6657 Rev 3.00
October 28, 2014
Page 2 of 16
ISL8201M
Pinout
ISL8201M
(15 LD QFN)
TOP AND 3D VIEW
9
8 7 6 5 4 3 2
1
15
14
13
10
12
11
Pin Descriptions
PIN
1, 2, 3, 4, 11
5
SYMBOL
PGND
PVCC
NC
DESCRIPTION
Power ground. Connect to ground plane directly.
Supply voltage. Connect 1µF ceramic capacitor to ground plane directly.
Do not connect.
6, 8, 15
Overcurrent protection. Integrated internal 3.57k resistor. Connect additional resistor between this
pin and PGND pin can change initial setting.
7
ISET
9
VIN
PHASE
VOUT
Power input. Connect to input.
10
12
13
14
Phase node. Node of high-side and low-side MOSFETs and output inductor connection.
Power output. Connect to output.
COMP/EN
FB
Compensation and enable.
Feedback input. Connect resistor between this pin and ground for adjusting output voltage.
FN6657 Rev 3.00
October 28, 2014
Page 3 of 16
ISL8201M
Absolute Maximum Ratings
Thermal Information
COMP/EN to PGND . . . . . . . . . . . . . . . . . . . . . . . . PGND - 0.3V to +6V
Thermal Resistance (Typical)
JA (°C/W)
13
JC (°C/W)
2
I
SET to PGND. . . . . . . . . . . . . . . . . . . . . PGND - 0.3V to PVCC + 0.3V
15 Ld QFN (Notes 5, 6) . . . . . . . . . . . .
P
P
V
VCC to PGND. . . . . . . . . . . . . . . . . . . . . . . . . . PGND - 0.3V to +15V
HASE to PGND. . . . . . . . . . . . . . . . . . . . . . . . -1.2V ~ +30V (Note 4)
IN to PHASE . . . . . . . . . . . . . . . . . . . . . . . . . -1.2V ~ +30V (Note 4)
Junction Temperature TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range TSTG . . . . . . . . . . . . .-55°C to +125°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Ratings
Input Supply Voltage (VIN) . . . . . . . . . . . . . . . . . . . . . . +1V to +20V
Output Voltage (VOUT) . . . . . . . . . . . . . . . . . . . . . . . . . +0.6V to +5V
PVCC
Fixed Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . +5V or +12V
Wide Range Supply . . . . . . . . . . . . . . . . . . . . . . +6.5V to +14.4V
Ambient Temperature Range (TA) . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. VDS (Drain-to-Source) specification for internal high-side and low-side MOSFET.
5. JA is measured in free air with the component mounted on a high effective thermal conductivity test board (i.e. 4-layer type without thermal vias
– see tech brief TB379) per JEDEC standards except that the top and bottom layers assume solid planes.
6. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications TA = +25°C. VIN = 12V, VOUT = 1.5V. CIN = 220µFx1, 10µF/Ceramicx2, COUT = 330µF (ESR = 10m),
22µF/Ceramicx3.
PARAMETER
INPUT CHARACTERISTICS
Input Supply Bias Current
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
IQ(VIN)
IinRush
IS(VIN)
IOUT = 0A, VOUT = 1.5V, VIN = 12V, PVCC = 12V
IOUT = 0A, VOUT = 1.5V, VIN = 12V, PVCC = 12V
IOUT = 10A, VOUT = 1.5V, VIN = 12V, PVCC = 12V
-
10
-
mA
mA
A
Input In-rush Current
-
140
1.48
-
Input Supply Current
-
-
OUTPUT CHARACTERISTICS
Output Continuous Current Range
Line Regulation Accuracy
IOUT(DC)
VIN = 12V, VOUT = 1.5V
0
-
-
10
-
A
VOUT/VIN VOUT = 1.5V, IOUT = 0A, VIN =3.3V to 20V, PVCC = 12V
VOUT/IOUT IOUT = 0A to 10A, VOUT = 1.5V, VIN = 12V, PVCC = 12V
0.1
0.5
20
%
Load Regulation Accuracy
-
-
%
Peak-to-Peak Output Ripple Voltage
DYNAMIC CHARACTERISTICS
Voltage Change For Positive Load Step
VOUT
IOUT = 10A, VOUT = 1.5V, VIN = 12V, PVCC = 12V
-
-
mV
VOUT-DP IOUT = 0A to 5A. Current slew rate = 2.5A/µs, VIN = 12V,
OUT = 1.5V, PVCC = 12V
-
-
36
39
-
-
mV
mV
V
Voltage Change For Negative Load Step
VOUT-DN IOUT = 0A to 5A. Current slew rate = 2.5A/µs, VIN = 12V,
OUT = 1.5V, PVCC = 12V
V
CONTROLLER
Shutdown PVCC Supply Current
Supply Voltage
IPVCC_S
PVCC
PVCC = 12V; Disabled (Note 7)
Fixed 5V supply
Wide range supply
IOUT = 10A, VOUT = 1.5V VIN = 12V
5V supply
4
5.2
5.0
7
mA
V
4.5
5.5
14.4
6.5 12.0
V
P
VCC Operating Current
IPVCC
-
22
47
4.1
-
-
mA
mA
V
12V supply
-
Rising PVCC Threshold
VPORR
VPORH
FOSC
(Note 7)
3.9
4.3
PVCC Power-On-Reset Threshold Hysteresis
Oscillator Frequency
(Note 7)
0.30 0.35 0.40
510 600 660
V
(Note 7)
kHz
FN6657 Rev 3.00
October 28, 2014
Page 4 of 16
ISL8201M
Electrical Specifications TA = +25°C. VIN = 12V, VOUT = 1.5V. CIN = 220µFx1, 10µF/Ceramicx2, COUT = 330µF (ESR = 10m),
22µF/Ceramicx3. (Continued)
PARAMETER
Internal Resistor Between VOUT and FB Pins
Disabled Threshold Voltage (COMP/EN)
Reference Voltage
SYMBOL
RFB-TI
CONDITIONS
MIN TYP MAX UNITS
9.66 9.76 9.85
0.375 0.4 0.425
k
V
VENDIS
VREF
(Note 7)
(Note 7)
-
0.6
-
V
Reference Voltage Tolerance
0°C to +70°C (Note 7)
-40°C to +85°C (Note 7)
-1.0
-1.5
-
-
+1.0
+1.5
%
%
FAULT PROTECTION
Internal Resistor Between ISET and PGND Pins
ISET Current Source
RSET-IN
ISET
-
3.57
-
k
(Note 7)
18.0 21.5 23.5
µA
NOTE:
7. Parameters are 100% tested for internal IC prior to module assembly.
Typical Performance Characteristics
Efficiency Performance TA = +25°C, VIN = PVCC (PVCC = 5V for 18VIN), CIN = 220µFx1, 10µF/Ceramicx2, COUT = 330µF (ESR = 10m),
V xI
P
OUT OUT
Output Power
Input Power
OUT
22µF/Ceramicx3. The efficiency equation is:
Efficiency = ----------------------------------------- = --------------- = --------------------------------------
P
V xI
IN
IN IN
100
90
80
70
60
50
40
30
100
90
80
70
60
50
40
30
3.3V
5.0V
3.3V
2.5V
2.5V
1.5V
1.5V
1.2V
1.2V
0.8V
0.8V
0
2
4
6
8
10
0
2
4
6
8
10
LOAD CURRENT (A)
LOAD CURRENT (A)
FIGURE 2. EFFICIENCY vs LOAD CURRENT (5VIN
)
FIGURE 3. EFFICIENCY vs LOAD CURRENT (12VIN)
100
V
V
= 12V
= 1.2V
IN
OUT
90
80
70
60
50
40
30
I
= 0A to 5A
OUT
5.0V
3.3V
2.5V
1.5V
1.2V
0
2
4
6
8
10
LOAD CURRENT (A)
FIGURE 4. EFFICIENCY vs LOAD CURRENT (18VIN
)
FIGURE 5. 1.2V TRANSIENT RESPONSE
FN6657 Rev 3.00
October 28, 2014
Page 5 of 16
ISL8201M
Typical Performance Characteristics (Continued)
Transient Response Performance TA = +25°C, VIN = 12V, VOUT = 1.5V, PVCC = 12V, CIN = 220µFx1, 10µF/Ceramicx2, COUT = 330µF
(ESR = 10m), 22µF/Ceramicx3 IOUT = 0-5A (10A), Current slew rate = 2.5A/µs
V
V
I
= 12V
V
V
I
= 12V
IN
OUT
IN
OUT
= 1.5V
= 0A to 5A
= 1.8V
= 0A to 5A
OUT
OUT
FIGURE 6. 1.5V TRANSIENT RESPONSE
FIGURE 7. 1.8V TRANSIENT RESPONSE
V
V
I
= 12V
V
V
I
= 12V
IN
OUT
IN
OUT
= 3.3V
= 0A to 5A
= 2.5V
= 0A to 5A
OUT
OUT
FIGURE 9. 3.3V TRANSIENT RESPONSE
FIGURE 8. 2.5V TRANSIENT RESPONSE
CPVCC
PVCC
VOUT
1.8V
10A
VIN
(+5V/+12V)
VIN
VOUT
CIN (BULK)
220µF
ISL8201M
PGND
CIN (CER)
10µF
25V
COUT2
330µF
COUT1
22µF
6.3V
x3
PHASE
COMP/EN
x2
FB
ISET
RFB
4.87k
FIGURE 10. TYPICAL APPLICATION
FN6657 Rev 3.00
October 28, 2014
Page 6 of 16
ISL8201M
the MOSFETs outputs to be held low. The external pull-down
device will initially need to overcome a maximum of 5mA of
COMP/EN output current. However, once the controller is
disabled, the COMP/EN output will also be disabled, thus only
a 20µA current source will continue to draw current.
Pin Functions
PGND (Pins 1, 2, 3, 4, 11)
Power ground pin for signal, input, and output return path. PGND
needs to connect to one (or more) ground plane(s) immediately,
which is recommended to minimize the effect of switching noise,
copper losses, and maximize heat dissipation.
FB (Pin 14)
The FB pin is the output voltage adjustment of the ISL8201M. It
will regulate to 0.6V at the FB pin with respect to the PGND pin.
The ISL8201M has an integrated voltage dividing resistor. This
is a precision 9.76k resistor (RFB-TI) between the VOUT and
FB pins. Different output voltages can be programmed with
additional resistors between FB to PGND.
PVCC (Pin 5)
This pin provides the bias supply for ISL8201M, as well as the
low-side MOSFET’s gate and high-side MOSFET’s gate. If
PVCC rises above 6.5V, an internal 5V regulator will supply to
the internal logics bias (but high-side and low-side MOSFET
gate will still be sourced by PVCC). Connect a well decoupled
+5V or +12V supply to this pin.
Reference Circuitry For General Applications
NC (Pins 6, 8, 15)
Typical Application with Single Power Supply
These pins have no function; do not connect.
Figure 11 shows the ISL8201M application schematic for input
voltage +5V or +12V. The PVCC pin can connect to the input
supply directly.
ISET (Pin 7)
The ISET pin is the input for the overcurrent protection (OCP)
setting, which compares the rDS(ON) of the low-side MOSFET
to set the overcurrent threshold. The ISL8201M has an initial
protect overcurrent limit. It has an integrated internal 3.57k
resistor (RSET-IN) between the ISET and PGND pins, which
can prevent significant overcurrent impact to the module. One
can also connect an additional resistor RSET-EX between the
ISET pin and the PGND pin in order to reduce the current limit
point by paralleling.
CPVCC
PVCC
(+5V/+12V)
COMP/EN
ISL8201M
VIN
VIN
CIN
FB
PHASE
VOUT
COUT
VOUT
ISET
VIN (Pin 9)
PGND
RFB RSET-EX
Power input pin. Apply input voltage between the VIN pin and
PGND pin. It is recommended to place an input decoupling
capacitor directly between the VIN pin and the PGND pin. The
input capacitor should be placed as closely as possible to the
module.
FIGURE 11. TYPICAL APPLICATION SCHEMATIC
Typical Application with Separated Power Supply
Figure 12 shows the ISL8201M application schematic for wide
input voltages from +1V to +20V. The PVCC supply can source
+5V/+12V or +6.5V to 14.4V.
PHASE (Pin 10)
The PHASE pin is the switching node between the high and
low-side MOSFET. It also returns the current path for the high-
side MOSFET driver and detects the low-side MOSFET drain
voltage for the overcurrent limits point.
(+5V/+12V)
PVCC
or
(+6.5V TO 14.4V)
CPVCC
VOUT (Pin 12)
Power output pin. Apply output load between this pin and the
PGND pin. It is recommended to place a high frequency output
decoupling capacitor directly between the VOUT pin and the
PGND pin. The output capacitor should be placed as closely
as possible to the module.
PVCC
(+1V TO +20V)
CIN
COMP/EN
ISL8201M
VIN
VIN
FB
PHASE
COMP/EN (Pin 13)
VOUT
COUT
VOUT
ISET
PGND
This is the multiplexed pin of the ISL8201M. During soft-start
and normal converter operation, this pin represents the output
of the error amplifier. Use COMP/EN in combination with the
FB pin to compensate for the voltage control feedback loop of
the converter. Pulling COMP/EN low (VENDIS = 0.4V nominal)
will disable (shut-down) the controller, which causes the
oscillator to stop, and the high-side gate and low-side gate of
RFB RSET-EX
FIGURE 12. WIDE INPUT VOLTAGE APPLICATION SCHEMATIC
FN6657 Rev 3.00
October 28, 2014
Page 7 of 16
ISL8201M
If the COMP/EN pin is held low during power-up, the
initialization will be delayed until the COMP/EN is released and
its voltage rises above the VENDIS trip point.
Applications Information
The typical ISL8201M application schematic for input voltage
+5V or +12V is shown in Figure 11. External component
selection is primarily determined by the maximum load current
and input/output voltage.
Figures 14 and 15 show a typical power-up sequence in more
detail. The initialization starts at t0, when either PVCC rises
above VPORR, or the COMP/EN pin is released (after POR).
The COMP/EN will be pulled up by an internal 20µA current
source, however, the timing will not begin until the COMP/EN
exceeds the VENDIS trip point (at t1). The external capacitance
of the disabling device, as well as the compensation
capacitors, will determine how quickly the 20µA current source
will charge the COMP/EN pin. With typical values, it should
add a small delay compared to the soft-start times. The
COMP/EN will continue to ramp to ~1V.
Programming the Output Voltage
The ISL8201M has an internal 0.6V ±1.5% reference voltage.
Programming the output voltage requires a dividing resistor
(RFB). The output voltage can be calculated as shown in
Equation 1:
9.76k
--------------
V
= 0.6 1 +
(EQ. 1)
OUT
R
FB
Note: ISL8201M has integrated 9.76k resistance into the
module (dividing resistor for top side). The resistance
corresponding to different output voltages is as shown in
Table 1:
From t1, there is a nominal 6.8ms delay, which allows the
PVCC pin to exceed 6.5V (if rising up towards 12V), so that the
internal bias regulator can turn on cleanly. At the same time,
the ISET pin is initialized by disabling the low-side gate driver
and drawing ISET (nominal 21.5µA) through RSETI. This sets up
a voltage that will represent the ISET trip point. At t2, there is a
variable time period for the OCP sample and hold operation
(0.0ms to 3.4ms nominal; the longer time occurs with the
higher overcurrent setting). The sample and hold uses a digital
counter and DAC to save the voltage, so the stored value does
not degrade, as long as the PVCC is above VPORR (See
“Overcurrent Protection (OCP)” on page 10 for more details on
the equations and variables). Upon the completion of sample
and hold at t3, the soft-start operation is initiated, and the
output voltage ramps up between t4 and t5.
TABLE 1. RESISTANCE TO OUTPUT VOLTAGES
VOUT
RFB
0.6V
open
1.8V
4.87k
1.05V
13k
1.2V
9.76k
3.3V
1.5V
6.49k
5V
VOUT
RFB
2.5V
3.09k
2.16k
1.33k
Initialization (POR and OCP Sampling)
Figure 13 shows a start-up waveform of ISL8201M. The
power-on-reset (POR) function continually monitors the bias
voltage at the PVCC pin. Once the rising POR threshold has
exceeded 4V (VPORR nominal), the POR function initiates the
overcurrent protection (OCP) sample and hold operation (while
COMP/EN is ~1V). When the sampling is complete, VOUT
begins the soft-start ramp.
COMP/EN
t
t
1
0
PVCC
ISET
V
OUT
V
OUT
~4V
COMP/EN
FIGURE 14. ISET AND SOFT-START OPERATION
FIGURE 13. POR AND SOFT-START OPERATION
FN6657 Rev 3.00
October 28, 2014
Page 8 of 16
ISL8201M
If the output is pre-biased to a voltage above the expected value
(as shown Figure 18), neither MOSFET will turn on until the end
of the soft-start, at which time it will pull the output voltage down
to the final value. Any resistive load connected to the output will
help pull down the voltage (at the RC rate of the R of the load
and the C of the output capacitance).
t
t
t
4
t
t
2
3
5
1
COMP/EN
ISET
ISET
V
OUT
V
OUT
3.4ms
3.4ms
t
2
FIGURE 15. ISET AND SOFT-START OPERATION
Soft-Start and Pre-Biased Outputs
t
t
1
0
The soft-start internally ramps the reference on the
non-inverting terminal of the error amp from 0V to 0.6V in a
nominal 6.8ms. The output voltage will thus follow the ramp,
from zero to final value, in the same 6.8ms (the actual ramp
seen on the VOUT will be less than the nominal time), due to
some initialization timing, between t3 and t4.
FIGURE 16. NORMAL START-UP
The ramp is created digitally, so there will be 64 small discrete
steps. There is no simple way to change this ramp rate
externally.
V
OUT
After an initialization period (t3 to t4), the error amplifier
(COMP/EN pin) is enabled and begins to regulate the converter's
output voltage during soft-start. The oscillator's triangular
waveform is compared to the ramping error amplifier voltage. This
generates PHASE pulses of increasing width that charge the
output capacitors. When the internally generated soft-start voltage
exceeds the reference voltage (0.6V), the soft-start is complete
and the output should be in regulation at the expected voltage.
This method provides a rapid and controlled output voltage rise;
there is no large in-rush current charging the output capacitors.
The entire start-up sequence from POR typically takes up to
17ms; up to 10.2ms for the delay and OCP sample and 6.8ms for
the soft-start ramp.
FIGURE 17. PRE-BIASED START-UP
Figure 16 shows the normal curve for start-up; initialization
begins at t0, and the output ramps between t1 and t2. If the
output is pre-biased to a voltage less than the expected value
(as shown Figure 17), the ISL8201M will detect that condition.
Neither internal MOSFET will turn on until the soft-start ramp
voltage exceeds the output; VOUT starts seamlessly ramping
from there.
FN6657 Rev 3.00
October 28, 2014
Page 9 of 16
ISL8201M
side gate driver is disabled to allow an internal 21.5µA current
source to develop a voltage across RSET. The ISL8201M
samples this voltage (which is referenced to the PGND pin) at
the ISET pin, and holds it in a counter and DAC combination.
This sampled voltage is held internally as the overcurrent set
point, for as long as power is applied, or until a new sample is
taken after coming out of a shut-down.
VOUT
The actual monitoring of the low-side MOSFET ON-resistance
starts 200ns (nominal) after the edge of the internal PWM logic
signal (that creates the rising external low-side gate signal).
This is done to allow the gate transition noise and ringing on
the PHASE pin to settle out before monitoring. The monitoring
ends when the internal PWM edge (and thus low-side gate
signal) goes low. The OCP can be detected anywhere within
the above window.
If the converter is running at high duty cycles around 75% for
600kHz operation, then the low-side gate pulse width may not
500mV/DIV
FIGURE 18. PRE-BIASED START-UP - OVERCHARGED
be wide enough for the OCP to properly sample the rDS(ON)
.
For those cases, if the low-side gate signal is too narrow (or
not there at all) for 3 consecutive pulses, then the third pulse
will be stretched and/or inserted to the 425ns minimum width.
This allows for OCP monitoring every third pulse under this
condition. This can introduce a small pulse-width error on the
output voltage, which will be corrected on the next pulse; and
the output ripple voltage will have an unusual 3-clock pattern,
which may look like jitter.
If the VIN for the synchronous buck converter is from a different
supply that comes up after PVCC, the soft-start will go through
its cycle, but with no output voltage ramp. When VIN turns on,
the output will follow the ramp of the VIN from zero up to the
final expected voltage (at close to 100% duty cycle, with
COMP/EN pin >4V). If VIN is too fast, there may be excessive
in-rush current charging the output capacitors (only the
beginning of the ramp, from zero to VOUT matters here). If this
is not acceptable, then consider changing the sequencing of
the power supplies, sharing the same supply, or adding
sequencing logic to the COMP/EN pin to delay the soft-start
until the VIN supply is ready (see “Input Voltage
The overcurrent function will trip at a peak inductor current
(IPEAK) determined by Equation 2:
2 I
R
SET
SET
-------------------------------------------
I
=
(EQ. 2)
PEAK
r
DSON
Considerations” on page 11).
where:
ISET is the internal ISET current source (21.5µA typical).
If ISL8201M is disabled after soft-start (by pulling COMP/EN
pin low), and afterwards enabled (by releasing the COMP/EN
pin), then the full initialization (including OCP sample) will take
place. However, there is no new OCP sampling during
overcurrent retries. If the output is shorted to GND during soft-
start, the OCP will handle it, as described in the next section.
RSET is equivalent resistance between ISET and PGND pins.
rDS(ON) is typically 6.1m at (VPVCC = VGS = 10V, IDS = 30A)
and 9m at (VPVCC = VGS = 4.5V, IDS = 30A).
Note: ISL8201M has integrated 3.57k resistance (RSET-IN).
Therefore, the equivalent resistance of RSET can be expressed
in Equation 3:
Overcurrent Protection (OCP)
The overcurrent function protects the converter from a shorted
output by using the low-side MOSFET ON-resistance, rDS(ON)
to monitor the current. A resistor (RSET) programs the
overcurrent trip level.
,
R
R
SET-IN
+ R
SET-IN
SET-EX
-------------------------------------------------------
=
R
(EQ. 3)
SET
R
SET-EX
The scale factor of 2 doubles the trip point of the MOSFET
voltage drop, compared to the setting on the RSET resistor. The
OC trip point varies in a system mainly due to the MOSFET
This method enhances the converter's efficiency and reduces
cost by eliminating a current sensing resistor. If overcurrent is
detected, the output immediately shuts off. It cycles the soft-
start function in a hiccup mode (2 dummy soft-start time-outs,
then up to one real one) to provide fault protection. If the
shorted condition is not removed, this cycle will continue
indefinitely.
r
DS(ON) variations (i.e. over process, current and temperature).
To avoid overcurrent tripping in the normal operating load
range, find the RSET resistor from Equation 4, and with Steps 1
to 3:
1. The maximum rDS(ON) at the highest junction temperature
Following POR (and 6.8ms delay), the ISL8201M initiates the
overcurrent protection sample and hold operation. The low-
2. The minimum ISET from the “Electrical Specifications” table
on page 3.
FN6657 Rev 3.00
October 28, 2014
Page 10 of 16
ISL8201M
3. Determine IPEAK for:
retry at an acceptable level. At time t2, the output starts a
normal soft-start cycle, and the output tries to ramp. If the short
is still applied and the current reaches the ISET trip point any
time during the soft-start ramp period, the output will shut off
and return to time t0 for another delay cycle. The retry period is
thus two dummy soft-start cycles plus one variable one (which
depends on how long it takes to trip the sensor each time).
Figure 19 shows an example where the output gets about half-
way up before shutting down; therefore, the retry (or hiccup)
time will be around 17ms. The minimum should be nominally
13.6ms and the maximum 20.4ms. If the short condition is
finally removed, the output should ramp up normally on the
next t2 cycle.
I
L
-------------
I
I
+
OUTMAX
(EQ. 4)
PEAK
2
where IL is the output inductor ripple current. In a high input
voltage, high output voltage application, such as 20V input to
5V output, the inductor ripple becomes excessive due to the
fixed internal inductor value. In such applications, the output
current will be limited from the rating to approximately 70% of
the module’s rated current.
The relationships between the external RSET values and the
typical output current IOUT(MAX) OCP levels are as follows:
TABLE 2.
RSET
()
OCP (A) AT VIN = 12V,
= 5V
OCP (A) AT VIN = 12V
= 12V
P
P
VCC
13.3
VCC
17.3
OPEN
50k
20k
10k
5k
12.6
11.4
10.2
7.6
16.6
14.9
13.3
10.3
8.3
t
t
t
2
0
1
3k
6.3
V
2k
4.9
6.7
OUT
The range of allowable voltages detected (2 x ISET x RSET) is
0mV to 475mV. If the voltage drop across RSET is set too low,
then this can cause almost continuous OCP tripping and retry.
It will also be very sensitive to system noise and in-rush current
spikes, so it should be avoided. The maximum usable setting is
around 0.2V across RSET (0.4V across the MOSFET); values
above this might disable the protection. Any voltage drop
across RSET that is greater than 0.3V (0.6V MOSFET trip
point) will disable the OCP. Note that conditions during power-
up or during a retry may look different than normal operation.
During power-up in a 12V system, the ISL8201M starts
operation just above 4V; if the supply ramp is slow, the soft-
start ramp might be over well before 12V is reached.
Therefore, with low-side gate drive voltages, the rDS(ON) of the
MOSFET will be higher during power-up, effectively lowering
the OCP trip. In addition, the ripple current will likely be
different at a lower input voltage. Another factor is the digital
nature of the soft-start ramp. On each discrete voltage step,
there is in effect, a small load transient and a current spike to
charge the output capacitors. The height of the current spike is
not controlled, however, it is affected by the step size of the
output and the value of the output capacitors, as well as the
internal error amp compensation. Therefore, it is possible to
trip the overcurrent with in-rush current, in addition to the
normal load and ripple considerations.
FIGURE 19. OVERCURRENT RETRY OPERATION
Starting up into a shorted load looks the same as a retry into
that same shorted load. In both cases, OCP is always enabled
during soft-start; once it trips, it will go into retry (hiccup) mode.
The retry cycle will always have two dummy time-outs, plus
whatever fraction of the real soft-start time passes before the
detection and shutoff. At that point, the logic immediately starts
a new two dummy cycle time-out.
Input Voltage Considerations
Figure 12 shows a standard configuration where PVCC is either
5V (±10%) or 12V (±20%). In each case, the gate drivers use
the PVCC voltage for low-side gate and high-side gate driver. In
addition, PVCC is allowed to work anywhere from 6.5V up to the
14.4V maximum. The PVCC range between 5.5V and 6.5V is
not allowed for long-term reliability reasons, but transitions
through it to voltages above 6.5V are acceptable.
There is an internal 5V regulator for bias, which turns on
between 5.5V and 6.5V. Some of the delay after POR is there to
allow a typical power supply to ramp-up past 6.5V before the
soft-start ramps begins. This prevents a disturbance on the
output, due to the internal regulator turning on or off. If the
transition is slow (not a step change), the disturbance should be
minimal. Thus, while the recommendation is to not have the
output enabled during the transition through this region, it may
be acceptable. The user should monitor the output for their
Figure 19 shows the output response during a retry of an
output shorted to PGND. At time t0, the output has been turned
off due to sensing an overcurrent condition. There are two
internal soft-start delay cycles (t1 and t2) to allow the MOSFETs
to cool down in order to keep the average power dissipation in
FN6657 Rev 3.00
October 28, 2014
Page 11 of 16
ISL8201M
application to see if there is any problem. If PVCC powers up first
and the VIN is not present by the time the initialization is done,
then the soft-start will not be able to ramp the output, and the
output will later follow part of the VIN ramp when it is applied. If
this is not desired, then change the sequencing of the supplies,
or use the COMP/EN pin to disable VOUT until both supplies are
ready.
Where:
IN is the input capacitance (µF)
C
IIN is the input current (A)
t is the turn on time of the high-side switch (µs)
V is the allowable peak-to-peak voltage (V)
Figure 20 shows a simple sequencer for this situation. If PVCC
powers up first, Q1 will be off, and R3 pulling to PVCC will turn
Q2 on, keeping the ISL8201M in shut-down. When VIN turns
on, the resistor divider R1 and R2 determines when Q1 turns
on, which will turn off Q2 and release the shut-down. If VIN
powers up first, Q1 will be on, turning Q2 off; so the ISL8201M
will start-up as soon as PVCC comes up. The VENDIS trip point
is 0.4V nominal, so a wide variety of N-MOSFET or NPN BJT
or even some logic IC's can be used as Q1 or Q2. However, Q2
must be low leakage when off (open-drain or open-collector) so
as not to interfere with the COMP output. Q2 should also be
placed near the COMP/EN pin.
In addition to the bulk capacitance, some low Equivalent Series
Inductance (ESL) ceramic capacitance is recommended to
decouple between the drain terminal of the high-side MOSFET
and the source terminal of the low-side MOSFET. This is used
to reduce the voltage ringing created by the switching current
across parasitic circuit elements.
Output Capacitors
The ISL8201M is designed for low output voltage ripple. The
output voltage ripple and transient requirements can be met
with bulk output capacitors (COUT) with low enough Equivalent
Series Resistance (ESR). COUT can be a low ESR tantalum
capacitor, a low ESR polymer capacitor or a ceramic capacitor.
The typical capacitance is 330µF and decoupled ceramic
output capacitors are used. The internally optimized loop
compensation provides sufficient stability margins for all
ceramic capacitor applications with a recommended total value
of 400µF. Additional output filtering may be needed if further
reduction of output ripple or dynamic transient spike is
required.
V
PVCC
IN
R
R
R
3
1
TO COMP/EN
Layout Guide
2
Q
Q
2
To achieve stable operation, low losses, and good thermal
performance some layout considerations are necessary.
1
FIGURE 20. SEQUENCE CIRCUIT
C
PGND
PVCC
The VIN range can be as low as ~1V (for VOUT as low as the
0.6V reference) and as high as 20V. There are some
restrictions for running high VIN voltage. The maximum PHASE
voltage is 30V. The VIN + PVCC + any ringing or other
transients on the PHASE pin must be less than 30V. If VIN is
20V, it is recommended to limit PVCC to 5V.
V
IN
R
FB
V
OUT
Switching Frequency
C
IN
The switching frequency is a fixed 600kHz clock, which is
determined by the internal oscillator. However, all of the other
timing mentioned (POR delay, OCP sample, soft-start, etc.) is
independent of the clock frequency (unless otherwise noted).
C
OUT1
(DECOUPLE)
PGND
Selection of the Input Capacitor
The input filter capacitor should be based on how much ripple
the supply can tolerate on the DC input line. The larger the
capacitor, the less ripple expected but consideration should be
taken for the higher surge current during power-up. The
ISL8201M provides the soft-start function that controls and
limits the current surge. The value of the input capacitor can be
calculated by Equation 5:
FIGURE 21. RECOMMENDED LAYOUT
• The ground connection between pin 11 and pins 1 to 4
should be a solid ground plane under the module.
• Place a high frequency ceramic capacitor between (1) VIN
and PGND (pin 11) and (2) PVCC and PGND (pins 1 to 4) as
I
t
IN
-------------------
=
C
(EQ. 5)
IN
V
FN6657 Rev 3.00
October 28, 2014
Page 12 of 16
ISL8201M
close to the module as possible to minimize high frequency
noise.
Thermal Considerations
Experimental power loss curves along with JA from thermal
modeling analysis can be used to evaluate the thermal
consideration for the module. The derating curves are derived
from the maximum power allowed while maintaining the
temperature below the maximum junction temperature of
+125°C. In actual application, other heat sources and design
margin should be considered.
• Use large copper areas for power path (VIN, PGND, VOUT)
to minimize conduction loss and thermal stress. Also, use
multiple vias to connect the power planes in different layers.
• Keep the trace connection to the feedback resistor short.
• Avoid routing any sensitive signal traces near the PHASE
node.
12
10
8
3.5
3.0
3.3V
1.5V
2.5
3.3V
1.5V
2.0
0.6V
6
0.6V
1.5
1.0
0.5
0.0
4
2
0
0
2
4
6
8
10
60
70
80
90
100
110
LOAD CURRENT (A)
AMBIENT TEMPERATURE (°C)
FIGURE 22. POWER LOSS vs LOAD CURRENT (5VIN
)
FIGURE 23. DERATING CURVE (5VIN)
4.0
12
10
8
1.5V
5.0V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.6V
3.3V
2.5V
5.0V
1.5V
6
0.6V
2.5V
4
3.3V
2
0
0
2
4
6
8
10
60
70
80
90
100
110
LOAD CURRENT (A)
AMBIENT TEMPERATURE (°C)
FIGURE 24. POWER LOSS vs LOAD CURRENT (12VIN
)
FIGURE 25. DERATING CURVE (12VIN)
© Copyright Intersil Americas LLC 2009-2014. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6657 Rev 3.00
October 28, 2014
Page 13 of 16
ISL8201M
Stencil Pattern Design
Package Description
Reflowed solder joints on the perimeter I/O lands should have
about a 50µm to 75µm (2mil to 3mil) standoff height. The solder
paste stencil design is the first step in developing optimized,
reliable solder joins. Stencil aperture size to land size ratio should
typically be 1:1. The aperture width may be reduced slightly to
help prevent solder bridging between adjacent I/O lands. To
reduce solder paste volume on the larger thermal lands, it is
recommended that an array of smaller apertures be used instead
of one large aperture. It is recommended that the stencil printing
area cover 50% to 80% of the PCB layout pattern. A typical solder
stencil pattern is shown in the Package Outline Drawing
L15.15x15 on page 15. The gap width between pad to pad is
0.6mm. The user should consider the symmetry of the whole
stencil pattern when designing its pads. A laser cut, stainless steel
stencil with electropolished trapezoidal walls is recommended.
Electropolishing "smoothes" the aperture walls resulting in
reduced surface friction and better paste release which reduces
voids. Using a trapezoidal section aperture (TSA) also promotes
paste release and forms a "brick like" paste deposit that assists in
firm component placement. A 0.1mm to 0.15mm stencil thickness
is recommended for this large pitch (1.3mm) QFN.
The structure of ISL8201M belongs to the Quad Flat-pack
No-lead package (QFN). This kind of package has advantages,
such as good thermal and electrical conductivity, low weight and
small size. The QFN package is applicable for surface mounting
technology and is being more readily used in the industry. The
ISL8201M contains several types of devices, including resistors,
capacitors, inductors and control ICs. The ISL8201M is a copper
leadframe based package with exposed copper thermal pads,
which have good electrical and thermal conductivity. The copper
leadframe and multi component assembly is overmolded with
polymer mold compound to protect these devices.
The package outline and typical PCB layout pattern design and
typical stencil pattern design are shown in the package outline
drawing L15.15x15 on page 15. The module has a small size
of 15mmx15mm x 3.5mm. Figure 26 shows typical reflow
profile parameters. These guidelines are general design rules.
Users could modify parameters according to their application.
PCB Layout Pattern Design
The bottom of ISL8201M is leadframe footprint, which is
attached to PCB by surface mounting process. The PCB layout
pattern is shown in the Package Outline Drawing L15.15x15 on
page 15. The PCB layout pattern is essentially 1:1 with the
QFN exposed pad and I/O termination dimensions, except for
the PCB lands being a slightly extended distance of 0.2mm
(0.4mm max) longer than the QFN terminations, which allows
for solder filleting around the periphery of the package. This
ensures a more complete and inspectable solder joint. The
thermal lands on the PCB layout should match 1:1 with the
package exposed die pads.
Reflow Parameters
Due to the low mount height of the QFN, "No Clean" Type 3
solder paste per ANSI/J-STD-005 is recommended. Nitrogen
purge is also recommended during reflow. A system board
reflow profile depends on the thermal mass of the entire
populated board, so it is not practical to define a specific
soldering profile just for the QFN. The profile given in Figure 26
is provided as a guideline, to be customized for varying
manufacturing practices and applications.
300
PEAK TEMPERATURE +230°C~+245°C;
Thermal Vias
TYPICALLY 60s-70s ABOVE +220°C
KEEP LESS THAN 30s WITHIN 5°C OF PEAK TEMP.
A grid of 1.0mm to 1.2mm pitch thermal vias, which drops
down and connects to buried copper plane(s), should be
placed under the thermal land. The vias should be about
0.3mm to 0.33mm in diameter with the barrel plated to about
1.0 ounce copper. Although adding more vias (by decreasing
via pitch) will improve the thermal performance, diminishing
returns will be seen as more and more vias are added. Simply
use as many vias as practical for the thermal land size and
your board design rules allow.
250
200
SLOW RAMP (3°C/s MAX)
AND SOAK FROM +100°C
TO +180°C FOR 90s~120s
150
100
RAMP RATE 1.5°C FROM +70°C TO +90°C
50
0
0
100
150
200
250
300
350
DURATION (s)
FIGURE 26. TYPICAL REFLOW PROFILE
FN6657 Rev 3.00
October 28, 2014
Page 14 of 16
Package Outline Drawing
L15.15x15
15 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (PUNCH QFN)
Rev 3, 8/10
23X 1.30
7x 1.70
2X 7.70
5.90
4X 1.90
X4
1.30
0.2 S AB
PIN 1
INDEX AREA
1 151413
12
12
13 14 15 1
1.80
2
2
3
4
5
6
7
8
3.80
11X 0.80
0.90
3
4
5
6
7
8
3.10
6.90
5.10
1.90
11
13.80
15.0±0.2 15.8±0.2
11
2.10
9.0
2.10
6.0000
5.0
9
9
2.90
0.30
45°
10
5.80
10
15.0±0.2
15.8±0.2
0.05M S AB 33x 0.5
21X 1.0
2X1.125
(33x0.4)
3.0
4.80
4.60
2.20
TOP VIEW
4X 7.90
BOTTOM VIEW
5° ALL AROUND
0.2 S
3.5±0.2
NOTES:
0.5
0.05 S
S
1. Dimensions are in millimeters.
2.
Unless otherwise specified, tolerance : Decimal ± 0.05;
Body Tolerance ±0.1mm
SIDE VIEW
The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
3.
8.30
6.10
5.60
4.80
8.29
6.18
6.08
5.52
4.87
4.22
8.29
6.99
5.52
4.22
3.58
2.92
2.28
1.62
4.30
3.50
Package Boundary
3.00
2.20
1.70
0.90
3.57
2.92
2.27
1.62
0.97
0.32
0.00
0.33
8.30
6.00
5.10
0.40
0.0
0.98
0.32
0.00
3.10
2.10
0.0
0.40
0.90
0.32
0.98
1.63
2.28
2.93
3.58
4.23
4.88
5.53
7.01
8.31
0.98
1.63
2.28
2.93
4.88
5.53
1.70
2.20
0.90
1.90
8.30
3.00
4.00
8.30
TYPICAL RECOMMENDED LAND PATTERN
STENCIL PATTERN WITH SQUARE PADS-2
6.60
6.60
4.80
3.40
3.75
3.15
0.30
1.80
0.00
0.00
0.30
3.15
3.60
0.60
1.20
2.20
3.70
4.30
6.60
3.75
4.20
6.60
STENCIL PATTERN WITH SQUARE PADS-1
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