MBN600GR12A [RENESAS]
600A, 1200V, N-CHANNEL IGBT;
| 型号： | MBN600GR12A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 600A, 1200V, N-CHANNEL IGBT 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDE-N600GR12A-0
Hitachi IGBT Module / Silicon N-Channel IGBT
MBN600GR12A
[Rated 600A/1200V, Single-pack type]
FEATURES
OUTLINE DRAWING
• Low saturation voltage and high speed.
Unit in mm
• Low turn-OFF switching loss.
110
93
4-φ6.5
• Low noise due to built-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
• High reliability structure.
2-M8
E
C
E
• Isolated heat sink (terminals to base).
G
CIRCUIT DIAGRAM
13
21
29
2-M4
E
C
E
G
Weight：570g
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
Item
Collector-Emitter Voltage
Gate-Emitter Voltage
Symbol
VCES
VGES
IC
Unit
V
Value
1200
±20
V
DC
600
Collector Current
Forward Current
A
A
1ms
DC
ICP
1200
*1
IF
600
1200
1ms
IFM
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
PC
W
°C
°C
3790
Tj
-40 ~ +150
-40 ~ +125
Tstg
Viso
VRMS
2500(AC 1 minute)
*2
Terminals(M4/M8)
Mounting
1.37 / 7.84
Screw Torque
N·m
*3
2.94
Notes; *1 : RMS current of diode ≤ 180 Arms
*2 : Recommended value 1.18 / 7.35 N·m
*3 : Recommended value 2.45 N·m
CHARACTERISTICS (TC=25°C)
Item
Symbol
Unit
mA
nA
V
Min.
Typ.
2.2
Max.
1.0
Test Conditions
VCE=1200V, VGE=0V
GE=±20V, VCE=0V
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
ICES
IGES
VCE(sat)
VGE(TO)
Cies
tr
±500
2.8
V
IC=600A, VGE=15V
V
10
VCE=5V, IC=600mA
pF
54000
0.2
VCE=10V, VGE=0V, f=1MHz
Rise Time
0.5
0.8
VCC=600V, IC=600A
*4
Turn-On Time
Switching Times
ton
0.35
0.15
0.75
2.5
RG=2.2Ω
µs
Fall Time
tf
0.35
1.2
VGE=±15V
Inductive Load
Turn-Off Time
Peak Forward Voltage Drop
Reverse Recovery Time
toff
VFM
trr
V
3.5
IF=600A, VGE=0V
0.4
µs
IF=600A, VGE=-10V,di/dt=600A/µs
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
0.033
0.07
Junction to case
°C/W
Notes; *4 : RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; For actual application,please confirm this spec.sheet is the newest revision.
VGE=15V 14V13V12V
Tc=25°C
TYPICAL
TYPICAL
VGE=15V 14V13V12V
Tc=125°C
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
11V
11V
Pc=3790W
10V
9V
10V
9V
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Collector current vs. Collector to Emitter voltage
TYPICAL
TYPICAL
10
10
8
Tc=125°C
Tc=25°C
8
6
6
4
4
2
0
Ic=1200A
Ic=600A
Ic=1200A
Ic=600A
2
0
0
5
10
15
20
0
5
10
15
20
Gate to Emitter Voltage, VGE (V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL
TYPICAL
20
1200
Vcc=600V
Ic =600A
Tc=25°C
VGE=0V
Tc=25°C
Tc=125°C
1000
800
600
400
200
0
15
10
5
0
3600
4800
6000
1200
2400
0
0
1
2
3
4
5
Gate Charge, QG (nC)
Gate charge characteristics
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
PDE-N600GR12A-0
TYPICAL
TYPICAL
1.5
10
Vcc=600V
VGE=±15V
RG=2.2Ω
TC=25°C
Inductive Load
VCC=600V
VGE=±15V
IC =600A
TC=25°C
Inductive Load
1
toff
ton
1
toff
tr
0.5
ton
tr
tf
tf
0
0.1
0
100 200 300 400 500 600 700 800
1
10
100
Collector Current, IC (A)
Switching time vs. Collector current
Gate Resistance, RG (Ω)
Switching time vs. Gate resistance
TYPICAL
TYPICAL
160
1000
100
10
VCC=600V
VGE=±15V
RG=2.2Ω
TC=125°C
Inductive Load
VCC=600V
VGE=±15V
IC =600A
TC=125°C
Inductive Load
140
120
100
80
Eton
Etoff
Etoff
Err
60
40
Eton
Err
20
0
0.1
0
100
200
Collector Current. IC (A)
Switching loss vs. Collector current
300
400
500
600
700
1
10
100
Gate Resistance. RG (Ω)
Switching loss vs. Gate resistance
1
10000
1000
100
10
VGE=±15V
RG=2.2Ω
TC≤125°C
0.1
0.01
Diode
IGBT
0.001
1
0.001
0.01
0.1
1
10
0
200
400
600
800 1000 1200 1400
Time, t (s)
Collector to Emitter Voltage, VCE (V)
Transient thermal impedance
Reverse biased safe operating area
PDE-N600GR12A-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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