N0604N-S19-AY [RENESAS]

N-channel MOSFET Low on-state resistance; N沟道MOSFET的低导通电阻


型号：	N0604N-S19-AY
厂家：	RENESAS TECHNOLOGY CORP
描述：	N-channel MOSFET Low on-state resistance N沟道MOSFET的低导通电阻
文件：	总8页 (文件大小：148K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

N0604N

N-channel MOSFET

R07DS0850EJ0100

Rev.1.00

60 V, 82 A, 6.5 mΩ

Aug 27, 2012

Description

The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Low on-state resistance

R_{DS (on)}= 6.5 mΩ MAX. (V_GS= 10 V, I_D= 41 A)

• Low input capacitance

C_iss= 4150 pF TYP. (V_DS= 25 V, V_GS= 0 V)

• High current

I_D(DC)= ±82 A

• RoHS Compliant

Ordering Information

Part No.

N0604N-S19-AY ^∗

Lead Plating

Pure Sn (Tin)

Packing

Package

Tube

TO-220

50 p/tube

1.9 g TYP.

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T_A= 25°C, all terminals are connected)

Item

Symbol

V_DSS

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

V_GSS

I_D(DC)

I_D(pulse)

P_T1

±20

±82

Drain Current (pulse) ^∗

±200

116

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.5

T_ch

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

−55 to +150

I_AS

E_AS

125

Thermal Resistance

Channel to Case (Drain) Thermal Resistance R_th(ch-C)

1.08

83.3

°C/W

Channel to Ambient Thermal Resistance ^∗

R_th(ch-A)

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Starting T_ch= 25°C, R_G= 25 Ω, V_DD= 30 V, V_GS= 20 → 0 V, L = 100 μH

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 1 of 6

N0604N

Chapter Title

Electrical Characteristics (T_A= 25°C, all terminals are connected)

Item

Symbol

MIN.

TYP.

MAX.

Unit

μA

Test Conditions

Zero Gate Voltage Drain Current I_DSS

V_DS= 60 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

V_DS= 10 V, I_D= 1 mA

V_DS= 5 V, I_D= 41 A

V_GS= 10 V, I_D= 41 A

Gate Leakage Current

I_GSS

±100

4.0

Gate to Source Cut-off Voltage

Forward Transfer Admittance ^∗

V_GS(off)

| y_fs|

2.0

Drain to Source On-state

R_DS(on)

5.1

6.5

mΩ

Resistance ^∗

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

C_iss

C_oss

C_rss

t_d(on)

t_r

4150

310

165

V_DS= 25 V,

V_GS= 0 V,

f = 1 MHz

V_DD= 30 V, I_D= 41 A,

V_GS= 10 V,

R_G= 0 Ω

Turn-off Delay Time

Fall Time

t_d(off)

t_f

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage ^∗

Reverse Recovery Time

Reverse Recovery Charge

Note: ^∗1. Pulsed

Q_G

V_DD= 48 V,

Q_GS

Q_GD

V_F(S–D)

t_rr

V_GS= 10 V,

I_D= 82 A

1.5

I_F= 82 A, V_GS= 0 V

I_F= 82 A, V_GS= 0 V,

di/dt = 100 A/μs

Q_rr

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

50 Ω

90%

Wave Form

10%

90%

PG.

GS = 20 → 0 V

90%

BVDSS

10% 10%

Wave Form

d(on)

d(off)

off

τ = 1

Duty Cycle ≤ 1%

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

50 Ω

PG.

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 2 of 6

N0604N

Chapter Title

Typical Characteristics (T_A= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

140

120

100

150

100

75 100 125 150 175

T_C- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

1000

100

I_DC(pulse)= 200 A

10 ms

I_DC(DC)= 82 A

Power Dissipation Limited

T_C= 25°C

Single Pulse

0.1

100

V_DS- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

R_th(ch-A)= 83.3 °C/W

R_th(ch-C)= 1.08 °C/W

0.1

0.01

Single pulse

0.1 m

1 m

10 m

100 m

100

1000

PW - Pulse Width - s

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 3 of 6

N0604N

Chapter Title

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

300

100

Pulsed

V_GS= 10 V

T_A= 125 °C

75 °C

200

100

25 °C

–25 °C

0.1

Pulsed

V_DS= 10 V

0.01

0.001

V_DS- Drain to Source Voltage - V

V_GS- Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

T_A= 125°C

75°C

25°C

–25°C

Pulsed

V_DS= 5 V

V_DS= 10 V

I_D= 1.0 mA

-50

100

150

0.1

100

T_ch- Channel Temperature - °C

I_D- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Pulsed

I_D= 41 A

V_GS= 10 V

100

1000

V_GS- Gate to Source Voltage - V

I_D- Drain Current - A

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 4 of 6

N0604N

Chapter Title

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

C_iss

1000

100

C_oss

Puls ed

_GS= 10 V

V_GS= 0 V

f = 1 MHz

C_rss

I_D= 41 A

-50

100

150

0.01

0.1

100

T_ch- Channel Temperature - °C

V_DS- Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT CHARACTERISTICS

1000

100

V_DD= 12 V

30 V

t_d(off)

48 V

t_d(on)

t_r

V_DD= 30 V

t_f

V_GS=10 V

I_D= 82 A

R_G= 0 Ω

0.1

100

I_D- Drain Current - A

Q_G- Gate Charge - nC

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000

100

V_GS= 10 V

100

0 V

V_GS= 0 V

0.1

di/dt = 100 A/μ s

Pulsed

0.01

0.4

0.8

1.2

1.6

0.1

100

I_F- Diode Forward Current - A

V_F(S-D)- Source to Drain Voltage - V

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 5 of 6

N0604N

Chapter Title

Package Drawing (Unit: mm)

TO-220

4.8 MAX.

1.3±±.2

1±.2 MAX.

8.7 TYP.

3.6±±.2

1.52±±.2

±.8±±.1

2.54 TYP.

±.5±±.2

2.4±±.2

2.54 TYP.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

1 2 3

Equivalent Circuit

Drain

Body

Diode

Gate

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 6 of 6

Revision History

N0604N Data Sheet

Description

Summary

Rev.

1.00

Date

Page

Aug 27, 2012

−

First Edition Issued

All trademarks and registered trademarks are the property of their respective owners.

C - 1

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Colophon 2.2

N0604N-S19-AY [RENESAS]

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