N2500N-T1B-AT [RENESAS]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | N2500N-T1B-AT |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6.
7.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
9.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N2500N
SWITCHING
N-CHANNEL MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The N2500N is N-channel MOS Field Effect Transistor designed
for DC-DC converter and 2.5 V drive switching applications.
+0.1
0.4
+0.1
–0.05
0.16
–0.06
FEATURES
3
• 2.5 V drive available
• Low on-state resistance
0 to 0.1
RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)
• Low input capacitance
1
2
0.65
0.95 0.95
1.9
Ciss = 145 pF TYP.
• Small and surface mount package (SC-96)
• Built-in gate protection diode
0.9 to 1.1
1. Gate
2.9 0.2
2. Source
3. Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
N2500N-T1B-AT Note
N2500N-T2B-AT Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: YA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
250
12
V
V
Drain
0.5
A
2.0
A
Body
Diode
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
0.2
W
W
°C
°C
Gate
PT2
1.25
Tch
150
Gate
Protection
Diode
Storage Temperature
Tstg
−55 to +150
Source
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19677EJ1V1DS00 (1st edition)
Date Published October 2009 NS
Printed in Japan
2009
N2500N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
1.0
MAX.
10
UNIT
μA
μA
V
IDSS
VDS = 250 V, VGS = 0 V
IGSS
VGS = 12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.25 A
VGS = 4.5 V, ID = 0.25 A
VGS = 2.5 V, ID = 0.25 A
VDS = 10 V,
10
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.5
0.8
1.5
S
Note
4.2
4.3
145
17
5.8
6.6
Ω
Ω
Input Capacitance
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V,
f = 1.0 MHz
5
td(on)
tr
VDD = 125 V, ID = 0.25 A,
VGS = 4.5 V,
7
12
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
22
35
Total Gate Charge
QG
VDD = 200 V,
4.7
0.4
2.5
0.82
45
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 4.5 V,
ID = 0.5 A
IF = 0.5 A, VGS = 0 V
IF = 0.5 A, VGS = 0 V,
di/dt = 100 A/μs
1.5
ns
nC
Qrr
36
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
IG
= 2 mA
R
L
V
V
GS
0
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
VDD
50 Ω
PG.
VDD
DS
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
td(on)
tr
td(off)
t
f
τ = 1 s
μ
Duty Cycle ≤ 1%
t
on
t
off
2
Data Sheet D19677EJ1V1DS
N2500N
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt,
t ≤ 5 sec
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
1
I
D(pulse)
I
D(DC)
0.1
1 ms
10 ms
30 ms
0.01
0.001
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
i
100 ms
i
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without board
1000
100
10
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
1
Single Pulse
100 1000
0.1
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D19677EJ1V1DS
N2500N
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1.6
1.2
0.8
0.4
0
10
1
Pulsed
V
DS = 10 V
V
GS = 4.5 V
Pulsed
2.5 V
2.0 V
0.1
T
ch = 150°C
125°C
75°C
0.01
0.001
0.0001
25°C
−25°C
−55°C
0
2
4
6
8
10
0
1
2
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
1
0
10
V
DS = 10 V
= 1.0 mA
I
D
T
ch = −55°C
−25°C
25°C
1
75°C
125°C
150°C
V
DS = 10 V
Pulsed
0.1
0.01
0.1
ID - Drain Current - A
1
-75
-25
25
75
125
175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
12
10
8
6
V
GS = 2.0 V
ID = 0.5 A
0.25 A
4
2
6
4
2
0
0.05 A
2.5 V
4.5 V
Pulsed
8 10
Pulsed
0
0.001
0.01
0.1
1
10
0
2
4
6
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D19677EJ1V1DS
N2500N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
12
1000
100
10
I
D
= 0.25 A
C
iss
Pulsed
10
8
2.0 V
2.5 V
Coss
6
V
GS = 4.5 V
4
1
Crss
2
V
GS = 0 V
f = 1.0 MHz
0
0.1
-75
-25
25
75
125
175
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1
240
6
5
4
3
2
1
0
V
DD = 200 V
125 V
200
160
120
80
t
f
50 V
t
d(off)
t
r
V
GS
t
d(on)
V
V
DD = 125 V
GS = 4.5 V
R = 10 Ω
40
V
DS
I
D
= 0.5 A
5
G
0
0.1
1
10
0
1
2
3
4
6
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1
V
GS = 4.5 V
0.1
0.01
0 V
V
GS = 0 V
Pulsed
1
di/dt = 100 A/μs
0.001
1
0
0.2
0.4
0.6
0.8
1.2
0.1
1
10
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D19677EJ1V1DS
N2500N
• The information in this document is current as of October, 2009. The information is subject to change without notice. For
actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date
specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with
an NEC Electronics sales representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC
Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the
use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in
semiconductor product operation and application examples. The incorporation of these circuits, software and information in
the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes
no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and
information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree
and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property
or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient
safety measures in their design, such as redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The
"Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality
assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its
quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in
a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual
equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-
crime systems, safety equipment and medical equipment (not specifically designed for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and
medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data
sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC
Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness
to support a given application.
(Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined
above).
(M8E0909E)
相关型号：
N2503TC450-520
Silicon Controlled Rectifier, 4880A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element
IXYS
©2020 ICPDF网 联系我们和版权申明