NDL5561P2 [RENESAS]
FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT;型号: | NDL5561P2 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT 局域网 光纤 |
文件: | 总10页 (文件大小:194K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
2.
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crime systems; safety equipment; and medical equipment not specifically designed for life support.
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DATA SHEET
PHOTO DIODE
NDL5561P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ 80 µm InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
The NDL5561P Series is an InGaAs avalanche photo diode module with GI-62.5/125 multimode ber. It is
designed for detectors of long wavelength transmission systems and covers the wavelength range beween 1 000
and 1 600 nm. It features high quantum efficiency and high speed response.
FEATURES
•
•
Small dark current
ID = 8 nA
High quantum efficiency
η = 90 % @ λ = 1 300 nm, M = 1
η = 77 % @ λ = 1 550 nm, M = 1
fC = 1.2 GHz @ M = 20
φ 80 µm
•
•
•
High speed response
Detecting area size
Coaxial module with multimode fiber (GI-62.5/125)
PACKAGE ENSIONS
in mmetrs
NDL5561P
NDL561P1
NDL5561P2
Optical Fiber:
GI-62.5/125
Optical er:
GI-62./125
Optical Fiber:
GI-62.5/125
Length: 1 m MIN.
Length1 m MIN.
Length: 1 m MIN.
Shrunk tube
Shrunk tube
Shrunk tube
φ
2.5
14.0±0.1
+0.0
φ2.5
φ
2
φ
6.0
–0.1
+0.0
+0.0
φ
6.0
–0.1
φ
6.0
2– 2.2
φ
φ
0.45
2–φ2.5
3
3
3
2
1
2
1
2
1
φ
2.0
φ
2.0
φ
2.0
18.0±0.1
12.0±0.1
16.0±0.2
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
3
2
1
The information in this document is subject to change without notice.
Document No. P11348EJ3V0DS00 (3rd edition)
(Previous No. LD-2372)
The mark • shows major revised points.
Date Published February 1997 NS
Printed in Japan
©
1996
NDL5561P Series
ORDERING INFORMATION
Part Number
NDL5561P
Available Connector
Flange Type
No Flange
Without Connector
NDL5561PC
NDL5561PD
NDL5561P1
NDL5561P1C
NDL5561P1D
NDL5561P2
NDL5561P2C
NDL5561P2D
With FC-PC Connector
With SC-PC Connector
Without Connector
Flat Mount Flange
Vertical Flange
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)
Parameter
Forward Current
Symbol
IF
Ratings
10
Unit
°C
Reverse Current
IR
0.5
Operating Case Temperature
Storage Temperature
TC
–40 to +85
–40 to +85
260
Tstg
Tsld
°C
Lead Soldering Temperature (10 s)
°C
2
NDL5561P Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter
Symbol
V(BR)R
δ*1
Conditions
MIN.
50
TYP.
75
MAX.
100
Unit
V
Reverse Breakdown Voltage
ID = 100 µA
Temperature Coefficient of
Reverse Breakdown Voltage
0.2
%/°C
Dark Current
ID
IDM
Ct
fC
VR = V(BR)R × 0.9
8
2
50
5
nA
nA
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
M = 2 to 10
VR = V(BR)R × 0.9, f = 1 MHz
M = 10
1.0
2.0
F
1.0
GH
M = 20
1.2
90
Quantum Efficiency
Sensitivity
η
λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
λ = 1 300 nm, M = 1
λ = 1 550 nm, M = 1
λ = 1 550 nm, Ipo = 1.0 µA,
VR = V (@ ID = 1 µA)
= 1 300 nm, 1 500 nm, Ipo = 1.,
76
65
%
%
77
S
M
0.80
0.8
20
.96
40
A/W
Multiplication Factor
Excess Noise Factor*2
x
λ
0.7
5
F
M = 10, f = 35 MHz, B = MHz
VR = V(BR)R < 25 °C + ∆T °C > – V(BR)R < 25 °C >
∆T °C V(BR)R < 25 °C >
*1 δ =
*2 F = MX
3
NDL5561P Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
QUANTUM EFFICIENCY vs.
WAVELENGTH
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
80
60
40
20
0
100
50
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
K
0.5
0.4
η
20
10
5
2
1
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
2
5
10
20
50
100
Wavelength λ ( µm)
Multiplication Factor M
DARK CURRENT AND PHOTO CURRENT
vs. REVERSE VOLTAGE
oduct
DARK CURRENT vs. REVERSE VOLTAGE
102
10
1
10–4
10–5
10–6
10–7
10–8
10–9
10–10
10–11
10–12
10–5
λ = 1 300 nm
po = 1 µA
10–6
10–7
10–8
I
C = 100 ˚C
T
Photo Current
10–9
+60 ˚C
10–10
0 ˚C
ued Pr
10–11
10–12
0
20
40
60
(V)
80
Reverse Voltage V
R
FREQUENCY RESPONSE
Dark Current
6
4
λ = 1 300, 1 550 nm
= 50 Ω
RL
2
0
M = 5
–2
–4
–6
–8
–10
10
20
30
Discontin
40
0
20
40
60
80
100
1
10
102
103
Frequency f (MHz)
Reverse Voltage V
R
(V)
4
NDL5561P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
oduct
(*1)
ferrule (*5)
ued Pr
(*2)
module body
Discontin
5
NDL5561P Series
InGaAs APD/PD FAMILY
Features
APD
PIN-PD
Remarks
φ 30 µm
φ 50 µm
φ 50 µm
φ 80 µm
φ 50 µm
φ 80 µm
φ 120 µm
Packages
(for 2.5 Gb/s) (for 2.5 Gb/s)
(for 2.5 Gb/s)
TO-18 type Can
Chip on Carrier
NDL5530
NDL5530C
–
–
NDL5520C
–
NDL5500
NDL5500C
–
NDL5510
NDL5510C
–
–
–
–
–
–
–
–
3 pins
–
Receptacle
Module
NDL5471RC 3 pins
NDL5471RD RC: FC recepe
RD: SC receptacl
Coaxial Module
with MMF
–
NDL5521P
NDL5551P
NDL5561P*2
NDL5561P1*2 NDL5421P1 NDL5461P1
NDL5561P2*2 NDL5421P2 NDL5461P2
NDL5421P
NDL5461P
–
P1, P2: ith flae
ND590P es: With
Pre-AM
NDL5521P1 NDL5551P1
NDL5521P2 NDL5551P2
NDL5553P*1
NDL5553P1*1
NDL5553P2*1
NDL5590P
NDL5590P1
NDL5590P2
Coaxial Module
with SMF
NDL5531P
NDL5531P1
NDL5531P2
–
NDL5553PS*1
NDL5553P1S*1
NDL5553P2S*1
–
–
481P*3
L5481P1*3
ND481P2*3
–
14-pin DIP
–
–
–
–
NDL5522P
–
NDL5506P
–
–
–
NDL5422P
–
–
–
–
–
–
∆T = 45 K (@ IC = 1.1 A)
Module with TEC
NDL5506PS
PS: With SMF
6-pin BFY Module
with MMF
–
–
With Pre-AMP
8-pin Mini-DIL
with SMF
NDL8800P
*1 For OTDR
*2 With GI-62.5/125
*3 For analog application (opticaCTV)
Remark Modules are ae FC-PC connector or optional SC-PC connector.
6
NDL5561P Series
REFERENCE
Document Name
Document No.
LEI-1201
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
C11535E
C10535E
MEI-1202
X10679E
7
NDL5561P Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-exrt thprouct from
a country other than Japan may also be prohibited without a license from that country. Pleasl an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any mehout the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for anerrors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of s, copyrights or other intellectual
property rights of third parties by or arising from use of a device descrid herein or any other liability arising
from use of such device. No license, either express, implieor otherwe, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporator others.
While NEC Corporation has been making continuous effort to ehe reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To mie risks of damage or injury to persons or
property arising from a defect in an NEC semiconductovice, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-cotaien, and anti-failure features.
NEC devices are classified into the following three quity grades:
"Standard", "Special", and "Specific". The Specifiquaity grade applies only to devices developed based on
a customer designated "quality assurance pogm" for a specific application. The recommended applications
of a device depend on its quality grae, as ndicaed below. Customers must check the quality grade of each
device before using it in a particular apcati.
Standard: Computers, office eqmencommunications equipment, test and measurement equipment,
audio and visual uipmn, home electronic appliances, machine tools, personal electronic
equipment and dustal robots
Special: Transportation eqipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, ame systems, safety equipment and medical equipment (not specifically designed
for life su
Specific: Aircafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
suport sstems or medical equipment for life support, etc.
The quality grade of EC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If cusomeited to use NEC devices for applications other than those specified for Standard quality grade,
they shld conact an NEC sales representative in advance.
dioative design is not implemented in this product.
M4 96. 5
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