NDL5561P2 [RENESAS]

FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT;
NDL5561P2
型号: NDL5561P2
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

FIBER OPTIC AVELANCHE PHOTODIODE DETECTOR, 1000-1600nm, PANEL MOUNT, THROUGH HOLE MOUNT

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Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
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Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
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DATA SHEET  
PHOTO DIODE  
NDL5561P Series  
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS  
φ 80 µm InGaAs AVALANCHE PHOTO DIODE MODULE  
DESCRIPTION  
The NDL5561P Series is an InGaAs avalanche photo diode module with GI-62.5/125 multimode ber. It is  
designed for detectors of long wavelength transmission systems and covers the wavelength range beween 1 000  
and 1 600 nm. It features high quantum efficiency and high speed response.  
FEATURES  
Small dark current  
ID = 8 nA  
High quantum efficiency  
η = 90 % @ λ = 1 300 nm, M = 1  
η = 77 % @ λ = 1 550 nm, M = 1  
fC = 1.2 GHz @ M = 20  
φ 80 µm  
High speed response  
Detecting area size  
Coaxial module with multimode fiber (GI-62.5/125)  
PACKAGE ENSIONS  
in mmetrs  
NDL5561P  
NDL561P1  
NDL5561P2  
Optical Fiber:  
GI-62.5/125  
Optical er:  
GI-62./125  
Optical Fiber:  
GI-62.5/125  
Length: 1 m MIN.  
Length1 m MIN.  
Length: 1 m MIN.  
Shrunk tube  
Shrunk tube  
Shrunk tube  
φ
2.5  
14.0±0.1  
+0.0  
φ2.5  
φ
2
φ
6.0  
–0.1  
+0.0  
+0.0  
φ
6.0  
–0.1  
φ
6.0  
2– 2.2  
φ
φ
0.45  
2–φ2.5  
3
3
3
2
1
2
1
2
1
φ
2.0  
φ
2.0  
φ
2.0  
18.0±0.1  
12.0±0.1  
16.0±0.2  
PIN CONNECTIONS  
1 Anode (Negative)  
2 Cathode (Positive)  
3 Case  
3
2
1
The information in this document is subject to change without notice.  
Document No. P11348EJ3V0DS00 (3rd edition)  
(Previous No. LD-2372)  
The mark shows major revised points.  
Date Published February 1997 NS  
Printed in Japan  
©
1996  
NDL5561P Series  
ORDERING INFORMATION  
Part Number  
NDL5561P  
Available Connector  
Flange Type  
No Flange  
Without Connector  
NDL5561PC  
NDL5561PD  
NDL5561P1  
NDL5561P1C  
NDL5561P1D  
NDL5561P2  
NDL5561P2C  
NDL5561P2D  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
Flat Mount Flange  
Vertical Flange  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
With FC-PC Connector  
With SC-PC Connector  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)  
Parameter  
Forward Current  
Symbol  
IF  
Ratings  
10  
Unit  
°C  
Reverse Current  
IR  
0.5  
Operating Case Temperature  
Storage Temperature  
TC  
–40 to +85  
–40 to +85  
260  
Tstg  
Tsld  
°C  
Lead Soldering Temperature (10 s)  
°C  
2
NDL5561P Series  
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)  
Parameter  
Symbol  
V(BR)R  
δ*1  
Conditions  
MIN.  
50  
TYP.  
75  
MAX.  
100  
Unit  
V
Reverse Breakdown Voltage  
ID = 100 µA  
Temperature Coefficient of  
Reverse Breakdown Voltage  
0.2  
%/°C  
Dark Current  
ID  
IDM  
Ct  
fC  
VR = V(BR)R × 0.9  
8
2
50  
5
nA  
nA  
Multiplied Dark Current  
Terminal Capacitance  
Cut-off Frequency  
M = 2 to 10  
VR = V(BR)R × 0.9, f = 1 MHz  
M = 10  
1.0  
2.0  
F  
1.0  
GH
M = 20  
1.2  
90  
Quantum Efficiency  
Sensitivity  
η
λ = 1 300 nm, M = 1  
λ = 1 550 nm, M = 1  
λ = 1 300 nm, M = 1  
λ = 1 550 nm, M = 1  
λ = 1 550 nm, Ipo = 1.0 µA,  
VR = V (@ ID = 1 µA)  
= 1 300 nm, 1 500 nm, Ipo = 1.,  
76  
65  
%
%
77  
S
M
0.80  
0.8
20  
.96  
40  
A/W  
Multiplication Factor  
Excess Noise Factor*2  
x
λ
0.7  
5
F
M = 10, f = 35 MHz, B = MHz  
VR = V(BR)R < 25 °C + T °C > – V(BR)R < 25 °C >  
T °C V(BR)R < 25 °C >  
*1 δ =  
*2 F = MX  
3
NDL5561P Series  
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)  
QUANTUM EFFICIENCY vs.  
WAVELENGTH  
EXCESS NOISE FACTOR vs.  
MULTIPLICATION FACTOR  
100  
80  
60  
40  
20  
0
100  
50  
1 300 nm ( ), 1 550 nm ( )  
f = 35 MHz, B = 1 MHz  
K
0.5  
0.4  
η
20  
10  
5
2
1
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7  
2
5
10  
20  
50  
100  
Wavelength λ ( µm)  
Multiplication Factor M  
DARK CURRENT AND PHOTO CURRENT  
vs. REVERSE VOLTAGE  
oduct  
DARK CURRENT vs. REVERSE VOLTAGE  
102  
10  
1
10–4  
10–5  
10–6  
10–7  
10–8  
10–9  
10–10  
10–11  
10–12  
10–5  
λ = 1 300 nm  
po = 1 µA  
10–6  
10–7  
10–8  
I
C = 100 ˚C  
T
Photo Current  
10–9  
+60 ˚C  
10–10  
0 ˚C  
ued Pr  
10–11  
10–12  
0
20  
40  
60  
(V)  
80  
Reverse Voltage V  
R
FREQUENCY RESPONSE  
Dark Current  
6
4
λ = 1 300, 1 550 nm  
= 50 Ω  
RL  
2
0
M = 5  
–2  
–4  
–6  
–8  
–10  
10  
20  
30  
Discontin  
40  
0
20  
40  
60  
80  
100  
1
10  
102  
103  
Frequency f (MHz)  
Reverse Voltage V  
R
(V)  
4
NDL5561P Series  
HANDLING PRECAUTION for PD/APD MODULE  
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the  
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC  
recommends the following handling precautions.  
1. Do not make the fiber bend radius less than 30 mm (*3).  
2. Do not bend the fiber within the 18 mm section from the module body (*4).  
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).  
fiber  
oduct  
(*1)  
ferrule (*5)  
ued Pr  
(*2)  
module body  
Discontin  
5
NDL5561P Series  
InGaAs APD/PD FAMILY  
Features  
APD  
PIN-PD  
Remarks  
φ 30 µm  
φ 50 µm  
φ 50 µm  
φ 80 µm  
φ 50 µm  
φ 80 µm  
φ 120 µm  
Packages  
(for 2.5 Gb/s) (for 2.5 Gb/s)  
(for 2.5 Gb/s)  
TO-18 type Can  
Chip on Carrier  
NDL5530  
NDL5530C  
NDL5520C  
NDL5500  
NDL5500C  
NDL5510  
NDL5510C  
3 pins  
Receptacle  
Module  
NDL5471RC 3 pins  
NDL5471RD RC: FC recepe  
RD: SC receptacl
Coaxial Module  
with MMF  
NDL5521P  
NDL5551P  
NDL5561P*2  
NDL5561P1*2 NDL5421P1 NDL5461P1  
NDL5561P2*2 NDL5421P2 NDL5461P2  
NDL5421P  
NDL5461P  
P1, P2: ith flae  
ND590P es: With  
Pre-AM
NDL5521P1 NDL5551P1  
NDL5521P2 NDL5551P2  
NDL5553P*1  
NDL5553P1*1  
NDL5553P2*1  
NDL5590P  
NDL5590P1  
NDL5590P2  
Coaxial Module  
with SMF  
NDL5531P  
NDL5531P1  
NDL5531P2  
NDL5553PS*1  
NDL5553P1S*1  
NDL5553P2S*1  
481P*3  
L5481P1*3  
ND481P2*3  
14-pin DIP  
NDL5522P  
NDL5506P  
NDL5422P  
T = 45 K (@ IC = 1.1 A)  
Module with TEC  
NDL5506PS  
PS: With SMF  
6-pin BFY Module  
with MMF  
With Pre-AMP  
8-pin Mini-DIL  
with SMF  
NDL8800P  
*1 For OTDR  
*2 With GI-62.5/125  
*3 For analog application (opticaCTV)  
Remark Modules are ae FC-PC connector or optional SC-PC connector.  
6
NDL5561P Series  
REFERENCE  
Document Name  
Document No.  
LEI-1201  
NEC semiconductor device reliability/quality control system  
Quality grades on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Guide to quality assurance for semiconductor devices  
Semiconductor selection guide  
C11535E  
C10535E  
MEI-1202  
X10679E  
7
NDL5561P Series  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
The export of this product from Japan is prohibited without governmental license. To export or re-exrt thprouct from  
a country other than Japan may also be prohibited without a license from that country. Pleasl an NEC sales  
representative.  
No part of this document may be copied or reproduced in any form or by any mehout the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for anerrors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of s, copyrights or other intellectual  
property rights of third parties by or arising from use of a device descrid herein or any other liability arising  
from use of such device. No license, either express, implieor otherwe, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporator others.  
While NEC Corporation has been making continuous effort to ehe reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To mie risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductovice, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-cotaien, and anti-failure features.  
NEC devices are classified into the following three quity grades:  
"Standard", "Special", and "Specific". The Specifiquaity grade applies only to devices developed based on  
a customer designated "quality assurance pogm" for a specific application. The recommended applications  
of a device depend on its quality grae, as ndicaed below. Customers must check the quality grade of each  
device before using it in a particular apcati.  
Standard: Computers, office eqmencommunications equipment, test and measurement equipment,  
audio and visual uipmn, home electronic appliances, machine tools, personal electronic  
equipment and dustal robots  
Special: Transportation eqipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, ame systems, safety equipment and medical equipment (not specifically designed  
for life su
Specific: Aircafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
suport sstems or medical equipment for life support, etc.  
The quality grade of EC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If cusomeited to use NEC devices for applications other than those specified for Standard quality grade,  
they shld conact an NEC sales representative in advance.  
dioative design is not implemented in this product.  
M4 96. 5  

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