NDL7552PC [RENESAS]
FIBER OPTIC PUMP LASER MODULE EMITTER, 1530-1570nm, PANEL MOUNT, THROUGH HOLE MOUNT, DIP, FC/PC CONNECTOR, HERMETIC SEALED, DIP-14;型号: | NDL7552PC |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | FIBER OPTIC PUMP LASER MODULE EMITTER, 1530-1570nm, PANEL MOUNT, THROUGH HOLE MOUNT, DIP, FC/PC CONNECTOR, HERMETIC SEALED, DIP-14 PC 光纤 |
文件: | 总8页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
LASER DIODE
NDL7552P
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE
1550 nm OTDR APPLICATION
DESCRIPTION
NDL7552P is a 1550 nm newly developed Strained Multiple Quantum Well (st-MQW) structure pulsd lasr diode
DIP module with singlemode fiber and internal thermoelectric cooler. It is designed for light sorces of optical
measurement equipment (OTDR).
This device is also available with FC - PC.
FEATURES
1
•
•
•
•
•
High output power
Long wavelength
Pf = 125 mW @IFP = 1000 mA*
λc = 1550 nm
PACKAGE ENSIONS
millimeters
2 – φ3.2 ±0.2
Internal thermoelectric cooler
5.1
1
2
15.0
8.0
Hermetically sealed 14 pin Dual-in-Line Package
Singlemode fiber pigtail
*1 Pulse Conditions: Pulse width (PW) = 10 µs,
Duty = 1 %
ORDERING INFORMATION
Optical Fiber
SM-9/125
φ
φ
φ
Length: 1 m
PART NUMBER
NDL7552P
DESCRIPTION
Without connector
NDL7552PC
With FC - PC cector
2.54
φ
0.45
PIN CONNECTIONS
PIN No.
FUNCTION
PIN No.
FUNCTION
1
2
3
4
5
COOLER ANODE
NC
NC
NC
LASER ANODE,
CASE GROUND
NC
NC
8
9
10
NC
LASER CATHODE
LASER ANODE,
CASE GROUND
THERMISTOR
THERMISTOR
NC
11
12
13
14
6
7
COOLER CATHODE
BOTTOM VIEW
#8
#7
#14
–
Thermistor
Case
LD
+
#1
Document No. P10472EJ3V0DS00 (3rd edition)
Date Published December 1995 P
Printed in Japan
1995
©
NDL7552P
ABSOLUTE MAXIMUM RATINGS (TC = 25 ˚C)
Parameter
Pulsed Forward Current*1
Reverse Voltage
Symbol
IFP
Ratings
1.2
Unit
A
VR
2.0
V
Cooler Current
IC
1.3
A
Cooler Voltage
VC
3.5
V
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature (10 sec)
TC
–20 to +65
–40 to +70
260
˚C
˚C
˚C
Tstg
Tsld
*1 Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 ˚C, T C = –20 ˚C to +65 ˚C)
Parameter
Forward Voltage
Symbol
VFP
Conditions
MIN.
2.5
MAX.
4.0
Unit
V
IFP = 1000 mA, PW = 10 µs,
Duty = 1 %
Threshold Current
Ith
40
70
mA
Optical Output Power from Fiber
Pf
IFP = 1000 mA,
100
125
mW
PW = 10 µs, Duty = 1
RMS Center Wavelength
RMS Spectral Width
λC
IFP = 1000 mA, PW = 1
1530
1550
6.5
1570
10.0
nm
nm
Duty = 1 %
σ
IFP = 1000 m, P10 µs,
Duty = %
Rise Time
Fall Time
tr
10 9%
90 10 %
2.0
2.0
ns
ns
tf
THERMISTOR AND TEC CHARACTERISTS (TLD = 25 ˚C, T C = –20 ˚C to +65 ˚C)
Parameter
Thermistor Resistance
Cooler Current
Smbol
R*2
Conditions
MIN.
9.5
TYP.
10
MAX.
10.5
1.0
Unit
kΩ
A
TLD = 25 ˚C
∆T = 40 K
∆T = 40 K
IC = 1.0 A
IC
0.6
1.1
Cooler Voltage
VC
1.5
V
Cooling Capacity
∆T*3
40
K
*2 nt: 3400 ± 100 K
*3 ∆T - TLD |
2
NDL7552P
TYPICAL CHARACTERISTICS (TC = 25 ˚C)
OPTICAL OUTPUT POWER FROM FIBER vs.
LD PULSE FORWARD CURRENT
125
LONGITUDINAL MODE (FROM FIBER)
PW = 10
µs
Duty = 1 %
100
75
50
25
0
200
400
600
800
1000
1550
5 nm/div.
Pulsed Forward Current IFP (mA)
elength λ (nm)
TYPICAL THERMISTOR RESISTANCE vs.
AMBIENT TEMPERATURE
50
30
20
10
5
3
2
1
0
25
50
75
Ambient Tempature Ta (˚C)
3
NDL7552P
LASER DIODE FAMILY FOR OTDR APPLICATION
Features
1.31 µm
1.55 µm
IFP*1
(mA)
Remarks
P (mW)
P (mW)
Part Number
Part Number
Package
MIN./TYP.
MIN./TYP.
φ5.6 Can
NDL7103
290/320
160/175
110/180
70/110
25/50
NDL7153
220/240
100/120
96/145
60/80
1000
400
NDL7113
NDL7163
4 Pin Coaxial Module
with SMF
NDL7503P/P1
NDL7513P/P1
NDL7514P/P1
NDL7502P
NDL7512P
NDL7510P
NDL7553P/P1
NDL7563P/P1
NDL7564P/P1
NDL7552P
NDL7562P
NDL7560P
1000
400
P: No flange
P1: With flange
15/40
400
14 Pin DIP Module
with SMF
125/190
90/110
40/55
100/125
70/80
1000
400
With TEC an
thermistor
20/30
400
These modules are also available with FC - PC.
*1 Pulse conditions;
Pulse width = 10 µs, duty = 1 % (modules)
Pulse width = 1 µs, duty = 1 % (φ5.6 can)
4
NDL7552P
REFERENCE
DOCUMENT NAME
DOCUMENT NO.
IEI-1205
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Semiconductor device package manual
IEI-1209
IEI-1207
MEI-1213
IEI-1202
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
X10679E
5
NDL7552P
CAUTION
Within this module there exists GaAs (Gallium Arsenide) material which is a harmful
substance if ingested. Please do not under any circumstance break the hermetic seal.
SEMICONDUCTOR LASER
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial number:
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
This product conforms to DHHS
regulations as applicable
to standards 21 CFR Chapter 1,
Subchapter J.
OUTPUT POWER
WAVELENGTH
CLASS IIIb LASER PRODUCT
mw MAX
nm
The export of this product from Japan is prohibited without governmental license. To export or re-export this prodct from
a country other than Japan may also be prohibited without a license from that country. Please call aNEC ales
representative.
No part of this document may be copied or reproduced in any form or by any means ut the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any erormay appear in this
document.
NEC Corporation does not assume any liability for infringement of patcopyights or other intellectual
property rights of third parties by or arising from use of a device describerein or any other liability arising
from use of such device. No license, either express, implied or otherwi, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation r others.
While NEC Corporation has been making continuous effort to enhareliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To miniisks of damage or injury to persons or
property arising from a defect in an NEC semiconductor d, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containme, ad anti-failure features.
NEC devices are classified into the following three qualitgrades:
“Standard“, “Special“, and “Specific“. The Specific qalitgrade applies only to devices developed based on
a customer designated “quality assurance progrm“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicted below. Customers must check the quality grade of each
device before using it in a particular applicatn.
Standard: Computers, office equipme, communications equipment, test and measurement equipment,
audio and visual equipnt, me electronic appliances, machine tools, personal electronic
equipment and industal robts
Special: Transportation equpme(automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crtems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, erosace equipment, submersible repeaters, nuclear reactor control systems, life
support sysms or medical equipment for life support, etc.
The quality grade f Ndevices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers itend to use NEC devices for applications other than those specified for Standard quality grade,
they shontct NEC Sales Representative in advance.
Anti-rdesign is not implemented in this product.
M4 94.11
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