NE3521M04 [RENESAS]
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain; N沟道砷化镓HJ -FET ,K波段低噪声和高增益型号: | NE3521M04 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
文件: | 总10页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
NE3521M04
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
R09DS0058EJ0100
Rev.1.00
Mar 19, 2013
FEATURES
•
•
Low noise figure and high associated gain:
NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz
NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
•
•
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3521M04-T2
NE3521M04-T2-A
Flat-lead 4-pin 3 kpcs/reel
thin-type super
V86
• Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
minimold (M04)
NE3521M04-T2B
NE3521M04-T2B-A
15 kpcs/reel
(Pb-Free)
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3521M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
4.0
V
–3.0
V
IDSS
mA
μA
mW
°C
Gate Current
IG
80
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Ptot
125
Tch
+125
Tstg
–65 to +125
°C
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 1 of 8
NE3521M04
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
3
–
2
3
15
0
V
ID
10
–
mA
dBm
Input Power
Pin
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Symbol
Test Conditions
VGS = –3.0 V
VDS = 2 V, VGS = 0 V
MIN.
TYP.
0.5
45
MAX.
Unit
μA
mA
V
IGSO
–
10
IDSS
25
–0.2
50
–
70
VGS (off) VDS = 2 V, ID = 100 μA
–0.7
–
–1.3
–
gm
NF
Ga
VDS = 2 V, ID = 10 mA
mS
dB
dB
Noise Figure
VDS = 2 V, ID = 10 mA, f = 20 GHz
0.85
11
1.2
–
Associated Gain
9
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Unit
dB
Noise Figure
NF
VDS = 2 V, ID = 6 mA, f = 20 GHz
0.9
dB
Associated Gain
Ga
10.5
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 2 of 8
NE3521M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
250
200
80
70
60
50
40
30
20
10
0
V
DS = 2 V
150
125
100
50
200
(°C)
0
50
100 125 150
250
-0.80
-0.60
-0.40
-0.20
0.00
Ambient Temperature T
A
GATE TO SOURCE VOLTAGE VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.DRAIN CURRENT
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
2.5
14
13
12
11
10
9
80
70
60
50
40
30
20
10
0
f = 20 GHz
DS = 2 V
Ga
V
2.0
1.5
1.0
0.5
0.0
VGS = 0 V
-0.1 V
8
-0.2 V
-0.3 V
7
NFmin
10
6
5
-0.4 V
-0.5 V
4
0.0
1.0
2.0
3.0
4.0
0
5
15
20
(mA)
25
30
DRAIN CURRENT I
D
DRAIN TO SOURCE VOLTAGE VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.FREQUENCY
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
V
DS = 2 V
18
16
14
12
10
8
I
D
= 10 mA
Ga
6
NFmin
4
2
0
25
5
10
15
20
30
FREQUENCY f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 3 of 8
NE3521M04
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 4 of 8
NE3521M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.05±0.1
1.25±0.1
(Bottom View)
(1.05)
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 5 of 8
NE3521M04
MOUNTING PAD DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
-Reference 1-
1.35
0.60
0.75
1
4 - φ0.50
0.58
Device Direction
4
2
0.80
3
0.75
0.60
1.35
-Reference 2-
Device Direction
1.6
0.6
Remark The mounting pad layout in this document is for reference only.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 6 of 8
NE3521M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Partial Heating
Peak temperature (package surface temperature) : 350°C or below
HS350
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 7 of 8
NE3521M04
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 8 of 8
Revision History
NE3521M04 Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Mar 19, 2013
-
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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