NE5550979A-T1A-A [RENESAS]

Silicon Power LDMOS FET; 硅功率LDMOS FET


型号：	NE5550979A-T1A-A
厂家：	RENESAS TECHNOLOGY CORP
描述：	Silicon Power LDMOS FET 硅功率LDMOS FET
文件：	总13页 (文件大小：790K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

NE5550979A

Silicon Power LDMOS FET

FEATURES

R09DS0031EJ0300

Rev.3.00

Mar 12, 2013

•

High Output Power

: P_out= 39.5 dBm TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 25 dBm)

High power added efficiency : η_add= 66% TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 25 dBm)

High Linear gain

High ESD tolerance

Suitable for VHF to UHF-BAND Class-AB power amplifier.

: G_L= 22 dB TYP. (V_DS= 7.5 V, I_Dset= 200 mA, f = 460 MHz, P_in= 10 dBm)

: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)

APPLICATIONS

•

150 MHz Band Radio System

460 MHz Band Radio System

900 MHz Band Radio System

ORDERING INFORMATION

Part Number

Order Number

Package Marking

Supplying Form

NE5550979A

NE5550979A-A

79A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

(Pb Free)

NE5550979A-T1

NE5550979A-T1-A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 1 kpcs/reel

NE5550979A-T1A NE5550979A-T1A-A

• 12 mm wide embossed taping

• Gate pin faces the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5550979A

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

Ratings

Unit

6.0

V_GS

I_DS

3.0

Total Power Dissipation ^Note

Channel Temperature

Storage Temperature

Note: Value at T_C= 25°C

P_tot

°C

T_ch

150

T_stg

−55 to +150

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 1 of 11

NE5550979A

RECOMMENDED OPERATING RANGE (T_A= 25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V_DS

Test Conditions

MIN.

−

1.65

−

TYP.

7.5

MAX.

9.0

2.85

−

Unit

V_GS

2.20

1.7

I_DS

Input Power

P_in

f = 460 MHz, V_DS= 7.5 V

−

dBm

ELECTRICAL CHARACTERISTICS (T_A= 25°C, unless otherwise specified)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Gate to Source Leakage Current

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

Gate Threshold Voltage

Drain to Source Breakdown Voltage

Transconductance

I_GSS

I_DSS

V_GS= 6.0 V

−

100

V_DS= 25 V

μA

V_th

BV_DSS

G_m

V_DS= 7.5 V, I_DS= 1.0 mA

I_DS= 10 μA

1.15

1.65

2.25

−

2.9

−

V_DS= 7.5 V, I_DS= 700 100 mA

Channel to Case

1.8

−

2.2

5.0

Thermal Resistance

RF Characteristics

R_th

°C/W

Output Power

P_out

I_DS

f = 460 MHz, V_DS= 7.5 V,

P_in= 25 dBm,

38.5

−

39.5

1.70

−

dBm

Drain Current

Power Drain Efficiency

Power Added Efficiency

Linear Gain

η_d

I_Dset= 200 mA (RF OFF)

η_add

Note 1

G_L

22.0

39.6

1.60

dBm

Output Power

P_out

I_DS

f = 157 MHz, V_DS= 7.5 V,

P_in= 23 dBm,

Drain Current

Power Drain Efficiency

Power Added Efficiency

Linear Gain

η_d

I_Dset= 200 mA (RF OFF)

η_add

Note 2

G_L

25.0

38.6

1.76

dBm

Output Power

P_out

I_DS

f = 900 MHz, V_DS= 7.5 V,

P_in= 27 dBm,

Drain Current

Power Drain Efficiency

Power Added Efficiency

Linear Gain

η_d

I_Dset= 200 mA (RF OFF)

η_add

Note 1

G_L

16.0

Note 1 : P_in= 10 dBm

Note 2 : P_in= 5 dBm

Remark DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 2 of 11

NE5550979A

TEST CIRCUIT SCHEMATIC FOR 460 MHz

OUT

50 Ω

C10

C22

C11

C12

C20

C21

FET

NE5550979A (WS)

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol

Value

1 μ F

100 pF

24 pF

Type

GRM31CR72A105KA01B

Maker

Murata

C10

GRM1882C1H101JA01

ATC100A240JW

C11

American Technical

Ceramics

C12

C20

C21

C22

2.4 pF

27 pF

ATC100A2R4BW

ATC100A270JW

ATC100A1R8BW

ATC100A101JW

American Technical

Ceramics

American Technical

Ceramics

1.8 pF

100 pF

4.7 kΩ

American Technical

Ceramics

American Technical

Ceramics

1/10 W Chip Resistor

SSM

SSM_RG1608PB472

PCB

123 nH

φ 0.5 mm, φ D = 3 mm, 10 Turns

R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm

WAKA 01K0790-20

Ohesangyou

Panasonic

WAKA

<R>

−

SMA Connecter

COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz

V_GS

GND

V_DS

C12

C11

C20 C21

C22

C10

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 3 of 11

NE5550979A

TYPICAL CHARACTERISTICS 1 (T_A= 25°C)

R: f = 460MHz, V_DS= 3.6/4.5/6/7.5/8.4/9 V, I_Dset= 200 mA, P_in= 0 to 32 dBm

IM: f1 = 460MHz, f2 = 461 MHz, V_DS= 3.6/4.5/6/7.5/8.4/9 V, I_Dset= 200mA, P_out(2 tone) = 12 to 38 dBm

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

out - 3.6 V

out - 4.5 V

out - 6.0 V

out - 7.5 V

out - 9 V

- 3.6 V

- 4.5 V

- 6 V

- 7.5 V

- 9 V

DS - 3.6 V

DS - 4.5 V

DS - 6.0 V

DS - 7.5 V

DS - 9 V

add - 3.6 V

add - 4.5 V

add - 6.0 V

add - 7.5 V

add - 9 V

–5

15 20

30 35

–5

15 20

30 35

Input Power Pin (dBm)

IM3/IM5

vs. 2 TONES OUTPUT POWER

, 3f vs. OUTPUT POWER

–10

–20

–30

–40

–50

–60

–70

- 3.6 V

- 4.5 V

- 6.0 V

- 7.5 V

- 3.6 V

- 4.5 V

- 6.0 V

- 7.5 V

- 9 V

- 3.6 V

- 4.5 V

- 6 V

- 7.5 V

- 3.6 V

- 4.5 V

- 6.0 V

- 7.5 V

- 9 V

–10

–20

–30

–40

–50

–60

–70

- 9 V

Output Power Pout (dBm)

2 Tones Output Power Pout (2 tone) (dBm)

Remark The graphs indicate nominal characteristics.

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 4 of 11

NE5550979A

<R>

TEST CIRCUIT SCHEMATIC FOR 157 MHz

VGS

OUT

50 Ω

C10

C24

L11

L20

C11

C12

C20

C21

C22

C23

FET

NE5550979A

<R>

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol

Value

1 μ F

100 pF

4.7 pF

Type

GRM31CR72A105KA01B

Maker

Murata

C10

GRM1882C1H101JA01

ATC100A4R7CT

C11

American Technical

Ceramics

C12

C20

C21

C22

C23

C24

39 pF

2.0 pF

22 pF

68 pF

12 pF

100 pF

4.7 kΩ

ATC100A390JT

ATC100A2R0CT

ATC100A220JT

ATC100A680JT

ATC100A120JT

ATC100A101JT

American Technical

Ceramics

American Technical

Ceramics

American Technical

Ceramics

American Technical

Ceramics

American Technical

Ceramics

American Technical

Ceramics

1/10 W Chip Resistor

SSM

SSM_RG1608PB472

L11

123 nH

27 nH

35 nH

−

φ 0.5 mm, φ D = 3 mm, 10 Turns

LLQ2012-F27N

Ohesangyou

TOKO

L20

φ 0.5 mm, φ D = 2.4 mm, 5 Turns

R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm

WAKA 01K0790-20

Ohesangyou

Panasonic

WAKA

PCB

SMA Connecter

−

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 5 of 11

NE5550979A

COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz

V^GS

GND

VDS

L11

C12

C11

C20

C21

C22

C10

L20

C23 C24

TYPICAL CHARACTERISTICS 2 (T_A= 25°C)

R: f = 157 MHz, V_DS= 3.6/4.5/6/7.5/9 V, I_Dset= 200 mA, P_in= 0 to 27 dBm

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

out - 3.6 V

out - 4.5 V

out - 6.0 V

out - 7.5 V

out - 9 V

- 3.6 V

- 4.5 V

- 6 V

- 7.5 V

- 9 V

η ^p- 3.6 V

η^add- 4.5 V

η^add- 6 V

η^add- 7.5 V

η^add- 9 V

DS - 3.6 V

- 4.5 V

^DD^SS - 6 V

DS - 7.5 V

DS - 9 V

–5

Input Power Pin (dBm)

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 6 of 11

NE5550979A

TEST CIRCUIT SCHEMATIC FOR 900 MHz

VGS

OUT

50 Ω

C10

C23

C11

C20

C21

C22

FET

NE5550979A

<R>

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol

Value

1 μ F

100 pF

15 pF

Type

GRM31CR72A105KA01B

Maker

Murata

C10

GRM1882C1H101JA01

ATC100A150JW

C11

American Technical

Ceramics

C20

C21

C22

C23

3.3 pF

12 pF

ATC100A3R3BW

ATC100A120JT

ATC100A101JT

American Technical

Ceramics

American Technical

Ceramics

American Technical

Ceramics

100 pF

4.7 kΩ

American Technical

Ceramics

1/10 W Chip Resistor

SSM

SSM_RG1608PB472

PCB

123 nH

φ 0.5 mm, φ D = 3 mm, 10 Turns

R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm

WAKA 01K0790-20

Ohesangyou

Panasonic

WAKA

−

SMA Connecter

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 7 of 11

NE5550979A

COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz

V^GS

VDS

C22

C11

C10

C23

C21

C20

TYPICAL CHARACTERISTICS 3 (T_A= 25°C)

RF: f = 900 MHz V_DS= 3.6/4.5/6/7.5/9 V, I_Dset= 200 mA, P_in= 0 to 32 dBm

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

- 3.6 V

- 4.5 V

- 6 V

- 7.5 V

- 9 V

out - 3.6 V

out - 4.5 V

out - 6.0 V

out - 7.5 V

out - 9 V

DS - 3.6 V

DS - 4.5 V

DS - 6.0 V

DS - 7.5 V

DS - 9 V

add - 3.6 V

η_add

- 4.5 V

add - 6.0 V

add - 7.5 V

add - 9 V

–5

15 20

30 35

–5

15 20

30 35

Input Power Pin (dBm)

Remark The graphs indicate nominal characteristics.

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 8 of 11

NE5550979A

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 9 of 11

NE5550979A

PACKAGE DIMENSIONS

79A (UNIT: mm)

(Bottom View)

4.2 MAX.

Source

1.5±0.2

Source

Gate

Drain

Gate

Drain

0.4±0.15

5.7 MAX.

0.8 MAX.

3.6±0.2

79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)

4.0

1.7

Source

Stop up the hole with a rosin or

something to avoid solder flow.

Drain

Gate

Through Hole: 0.2 × 33

0.5 0.5

6.1

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 10 of 11

NE5550979A

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Soldering Conditions

Condition Symbol

Infrared Reflow

Peak temperature (package surface temperature) : 260°C or below

IR260

Time at peak temperature

: 10 seconds or less

: 60 seconds or less

: 120 30 seconds

: 3 times

Time at temperature of 220°C or higher

Preheating time at 120 to 180°C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

Wave Soldering

Partial Heating

Peak temperature (molten solder temperature)

Time at peak temperature

: 260°C or below

: 10 seconds or less

WS260

HS350

Preheating temperature (package surface temperature)

: 120°C or below

: 1 time

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

Maximum number of flow processes

Peak temperature (terminal temperature)

Soldering time (per side of device)

: 350°C or below

: 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below

CAUTION

Do not use different soldering methods together (except for partial heating).

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

Page 11 of 11

Revision History

NE5550979A Data Sheet

Description

Summary

Rev.

Date

Page

−

1.00

2.00

Nov 25, 2011

Jul 04, 2012

First edition issued

p.1

p.5

p.6

p.7

p.8

p.9

Modification of ORDERING INFORMATION

Addition of TEST CIRCUIT SCHEMATIC FOR 157 MHz

Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz

Addition of TEST CIRCUIT SCHEMATIC FOR 900 MHz

Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz

Modification of S-PARAMETERS

Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

3.00

Mar 12, 2013

Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz

Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

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C - 1

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[Colophon 2.2]

NE5550979A-T1A-A [RENESAS]

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