NP100N04NUJ [RENESAS]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | NP100N04NUJ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Super low on-state resistance
⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
High current rating: ID(DC) = 100 A
•
•
•
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04NUJ–S18-AY ∗
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Package
1
TO-262 (MP-25SK) TYP. 1.8g
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
40
20
VGSS
ID(DC)
ID(pulse)
PT1
V
100
A
1
Drain Current (pulse) ∗
400
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
220
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Repetitive Avalanche Current ∗
Repetitive Avalanche Energy ∗
Tstg
−55 to +175
60
2
IAR
2
EAR
360
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
2
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
NP100N04NUJ
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Symbol
IDSS
MIN.
TYP.
MAX.
1.0
Unit
μA
nA
V
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
VDS = 40 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IGSS
100
4.0
Gate to Source Threshold Voltage VGS(th)
Forward Transfer Admittance ∗
2.0
45
3.0
87
VDS = VGS, I = 250 μ A
D
1
| yfs |
S
VDS = 5 V, ID = 50 A
VGS = 10 V, ID = 50 A
Drain to Source On-state
RDS(on)
2.5
3.0
mΩ
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
tr
5600
920
340
25
8400
1380
620
60
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 50 A,
VGS = 10 V,
RG = 0 Ω
15
40
Turn-off Delay Time
Fall Time
td(off)
tf
93
190
40
13
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗
Reverse Recovery Time
Reverse Recovery Charge
Note: ∗1. Pulsed test
QG
110
22
170
VDD = 32 V,
VGS = 10 V,
ID = 100 A
QGS
QGD
VF(S-D)
trr
32
1
0.9
55
1.5
IF = 100 A, VGS = 0 V
IF = 100 A, VGS = 0 V,
di/dt = 100 A/μs
ns
nC
Qrr
77
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
V
GS = 20 → 0 V
V
DS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ
= 1
μ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
R
L
PG.
50 Ω
V
DD
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 2 of 6
NP100N04NUJ
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
120
100
80
60
40
20
0
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(Pulse)
1 ms
I
D(DC)
DC
R
DS(ON) Limited
(VGS = 10 V)
Power Disspation Limited
Secondary Brakedown
Limited
1
10 ms
10
T
C
= 25°C
Single Pulse
0.1
0.1
1
100
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A)
= 83.3 C/W
°
R
th(ch-C)
= 0.68 C/W
°
1
0.1
0.01
Single Pulse
100 1000
0.001
1 m
10 m
100 m
1
10
PW - Pulse Width - s
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 3 of 6
NP100N04NUJ
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
450
400
350
300
250
200
150
100
50
1000
100
10
T
A
= −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
1
0.1
0.01
0.001
V
DS = 10 V
Pulsed
V
GS = 10 V
Pulsed
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
5
4
3
2
1
0
1000
100
10
V
DS = 10 V
V
DS = VGS
= 250 μA
Pulsed
I
D
T
A
= −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
1
0.1
1
10
100
-100
-50
0
50
100
150
200
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
ID = 100 A
50 A
20 A
V
GS = 10 V
Pulsed
Puls ed
15 20
0
5
10
0.1
1
10
100
1000
ID - Drain Current - A
VGS - Gate to Source Voltage - V
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 4 of 6
NP100N04NUJ
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
4
3
2
1
0
100000
10000
1000
100
C
iss
C
oss
rss
V
GS = 10 V
= 50 A
Pulsed
I
D
V
GS = 0 V
C
f = 1 MHz
-100
-50
0
50
100
150
200
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
V
DD = 32 V
20 V
8 V
td(off)
V
GS
tf
td(on)
tr
VDD = 20 V
VGS = 10 V
RG = 0 Ω
V
DS
I
D
= 100 A
100
1
0
0.1
1
10
100
0
20
40
60
80
120
ID - Drain Current - A
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V
GS = 10 V
100
10
1
0 V
10
di/dt = 100 A/μs
V
GS = 0 V
Pulsed
1
0.1
0.1
1
10
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
IF - Drain Current - A
V
F(S-D) - Source to Drain Voltage - V
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 5 of 6
NP100N04NUJ
Chapter Title
Package Drawings (Unit: mm)
TO-262 (MP-25SK)
4.45 0.2
1.3 0.2
10.0 0.2
4
1
2
3
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
2.54 TYP.
2.54 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 6 of 6
Revision History
NP100N04NUJ Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Jun 13, 2011
−
First Edition Issued
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C - 1
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