NP100N04PDH-E2-AY [RENESAS]
POWER, FET;
| 型号： | NP100N04PDH-E2-AY |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | POWER, FET |
| 文件： | 总11页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a
valid Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
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3.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100N04MDH, NP100N04NDH, NP100N04PDH
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP100N04MDH-S18-AY Note
NP100N04NDH-S18-AY Note
NP100N04PDH-E1-AY Note
NP100N04PDH-E2-AY Note
Tube
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
50 p/tube
Tape
TO-263 (MP-25ZP) typ. 1.5 g
800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
(TO-220)
FEATURES
• Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
• Super low on-state resistance
- NP100N04MDH, NP100N04NDH
RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)
RDS(on)2 = 4.7 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
- NP100N04PDH
RDS(on)1 = 2.9 mΩ MAX. (VGS = 10 V, ID = 50 A)
RDS(on)2 = 4.3 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
• High avalanche energy, High avalanche current
• Logic level drive Type
(TO-262)
• Low input capacitance
Ciss = 8700 pF TYP. (VDS = 25 V)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18806EJ3V0DS00 (3rd edition)
Date Published December 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP100N04MDH, NP100N04NDH, NP100N04PDH
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) (TC = 25°C) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
40
12
V
V
100
A
400
A
288
W
W
°C
°C
°C
A
PT2
1.8
Tch1
Tch2
Tstg
175
Channel Temperature Note2
200
Storage Temperature
−55 to +175
80
Repetitive Avalanche Current Note3
Repetitive Avalanche Current Note4
Repetitive Avalanche Energy Note5
IAR1
IAR2
90
A
EAR
1000
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Reliability test condition
High temperature bias condition (VDS = VDSS, VGS = 0 V, 250 Hr)
High temperature gate bias condition (VDS = 0 V, VGS = 12 V, 250 Hr)
3. L = 100 μH, Tch ≤ 200°C
<R>
<R>
4. L = 10 μH, Tch ≤ 200°C
5. Tch ≤ 200°C, RG = 25 Ω, VGS = 12 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
0.52
83.3
°C/W
°C/W
Rth(ch-A)
2
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 40 V, VGS = 0 V
MIN.
TYP.
MAX.
1
UNIT
μA
nA
V
IGSS
VGS = 12 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 50 A
100
2.5
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
VGS(th)
1.5
45
2.0
| yfs |
100
S
Drain to Source On-state Resistance Note
RDS(on)1
VGS = 10 V, ID = 50 A
2.6
2.3
3.3
3.0
3.3
2.9
4.7
4.3
mΩ
mΩ
mΩ
mΩ
NP100N04MDH, NP100N04NDH
VGS = 10 V, ID = 50 A
NP100N04PDH
RDS(on)2
VGS = 4.5 V, ID = 50 A
NP100N04MDH, NP100N04NDH
VGS = 4.5 V, ID = 50 A
NP100N04PDH
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
VDS = 25 V,
VGS = 0 V,
8700
1400
410
24
13000
2100
740
53
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
VDD = 20 V, ID = 50 A,
VGS = 10 V,
RG = 0 Ω
tr
12
30
Turn-off Delay Time
td(off)
150
16
300
40
Fall Time
tf
Total Gate Charge
QG
QGS
QGD
VF(S-D)
trr
VDD = 32 V,
165
27
250
Gate to Source Charge
VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
ID = 100 A
39
IF = 100 A, VGS = 0 V
IF = 100 A, VGS = 0 V,
di/dt = 100 A/μs
0.92
65
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
nC
Qrr
100
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 12 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
IAS
VDS
I
D
τ
t
d(on)
t
r
td(off)
t
f
V
DD
ton
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
R
L
50 Ω
PG.
VDD
3
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
TYPICAL CHARACTERISTICS (TA = 25°C) (NP100N04MDH)
FORWARD BIAS SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
<R>
<R>
1000
100
10
1000
100
10
I
D(Pulse)
I
D(Pulse)
I
D(DC)
I
D(DC)
DC
DC
1
1
T
C
= 25°C, Tch(MAX.) = 175°C
° °
TC = 25 C, Tch(MAX.) = 200 C
Single Pulse
Single Pulse
0.1
0.1
0.1
1
10
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
<R>
1000
100
10
Rth(ch-A) = 83.3°C/Wi
1
Rth(ch-C) = 0.52°C/Wi
0.1
Single Pulse
100 1000
0.01
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
Note Confirm the operation tracks are in Safe Operating Area.
4
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0
1000
100
V
GS = 10 V
4.5 V
T
ch = 200°C
175°C
10
1
150°C
75°C
25°C
−55°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
Pulsed
0
1
2
3
4
5
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
1000
100
10
VDS = VGS
T
ch = −55°C
2.5
2
25°C
75°C
150°C
I
D
= 10 mA
1.5
1
1
250 μA
175°C
200°C
0.1
0.5
0
V
DS = 10 V
Pulsed
0.01
-75
-25
25
75
125
175
225
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
10
Pulsed
8
8
6
4
2
0
6
4
V
GS = 4.5 V
10 V
2
I = 50 A
D
Pulsed
0
0
2
4
6
8
10
12
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
5
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
10
100000
10000
1000
8
C
C
iss
V
GS = 4.5 V
6
4
2
0
oss
C
rss
10 V
V
GS = 0 V
I = 50 A
Pulsed
D
f = 1 MHz
100
-75
-25
25
75
125
175
225
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
1000
100
10
10
8
V
DD = 32 V
20 V
8 V
40
30
20
10
0
t
d(off
t
f
6
t
d(on)
V
GS
4
t
r
V
DD = 20 V
2
V
DS
VGS = 10 V
R
G
= 0 Ω
D
I = 100 A
1
0
0.1
1
10
100
0
20 40 60 80 100 120 140 160 180
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1000
100
10
V
GS = 10 V
4.5 V
0 V
1
di/dt = 100 A/
GS = 0 V
μ
s
Pulsed
1.5
V
0.1
1
0
0.5
1
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
6
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K)
TO-262 (MP-25SK)
φ
3.8 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4.45 0.2
1.3 0.2
10.0 0.2
4
4
1
2
3
1
2
3
1.27 0.2
0.8 0.1
1.27 0.2
0.8 0.1
0.5 0.2
2.5 0.2
0.5 0.2
2.5 0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
2.54 TYP.
1. Gate
2. Drain
3. Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4. Fin (Drain)
TO-263 (MP-25ZP)
EQUIVALENT CIRCUIT
Drain
10.0 0.3
7.88 MIN.
4
4.45 0.2
No plating
1.3 0.2
Body
Diode
Gate
0.025
to 0.25
0.5
Source
0.75 0.2
2.54
0.25
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
TAPE INFORMATION (NP100N04PDH)
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
100N04
DH
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Soldering Conditions
Condition Symbol
IR60-00-3
Infrared reflow
NP100N04PDH
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
NP100N04MDH,
NP100N04NDH
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
THDWS
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
NP100N04MDH,
NP100N04NDH,
NP100N04PDH
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet D18806EJ3V0DS
NP100N04MDH, NP100N04NDH, NP100N04PDH
•
The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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