NP60N06PDK [RENESAS]
N-channel Power MOS FET;
| 型号： | NP60N06PDK |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | N-channel Power MOS FET |
| 文件： | 总9页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NP60N06PDK
60 V – 60 A – N-channel Power MOS FET
R07DS1296EJ0101
Rev.1.01
Dec 21, 2015
Application: Automotive
Description
NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Super low on-state resistance
⎯ RDS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
•
•
Outline
Drain
Body
Diode
Gate
Source
TO-263(MP-25ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
Taping (E1 type)
Taping (E2 type)
Package
1
1
NP60N06PDK-E1-AY *
NP60N06PDK-E2-AY *
Pure Sn (Tin)
Tape 800 p/reel
TO-263(MP-25ZP)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 1 of 7
NP60N06PDK
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
60
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
±20
V
±60
A
1
Drain Current (pulse) ∗
±240
105
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Repetitive Avalanche Current ∗
Repetitive Avalanche Energy ∗
Tstg
−55 to +175
25
2
IAR
2
EAR
63
mJ
Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. RG = 25 Ω, VGS = 20 V → 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
83.3
°C/W
°C/W
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 2 of 7
NP60N06PDK
Electrical Characteristics (TA = 25°C)
Item
Symbol
IDSS
Min
Typ
Max
1
Unit
μA
nA
V
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
Zero Gate Voltage Drain Current
Gate Leakage Current
IGSS
±100
2.5
Gate to Source Threshold Voltage VGS(th)
Forward Transfer Admittance ∗
1.5
30
2.1
54
6.4
7.0
2400
230
80
18
6
VDS = VGS, I = 250 μA
D
1
| yfs |
RDS(on)1
RDS(on)2
Ciss
S
VDS = 5 V, ID = 30 A
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 15 A
VDS = 25 V,
Drain to Source On-state
7.9
12.0
3600
350
150
40
mΩ
mΩ
pF
pF
pF
ns
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VGS = 0 V,
Coss
Crss
td(on)
tr
f = 1 MHz
VDD = 30 V, ID = 30 A,
VGS = 10 V,
20
ns
RG = 0 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
45
3
90
ns
10
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed test
QG
37
9
56
nC
nC
nC
V
VDD = 48 V,
VGS = 10 V,
ID = 60 A
QGS
QGD
VF(S-D)
trr
8
1
0.9
32
30
1.5
IF = 60 A, VGS = 0 V
IF = 60 A, VGS = 0 V,
di/dt = 100 A/μs
ns
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
VGS
RL
R
G = 25 Ω
50 Ω
90%
VGS
VGS
10%
Wave Form
0
RG
PG.
PG.
VDD
VDD
VGS = 20 → 0 V
VDS
90%
90%
tf
VDS
0
VGS
0
BVDSS
10% 10%
tr td(off)
VDS
Wave Form
IAS
ID
VDS
τ
td(on)
VDD
ton
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 3 of 7
NP60N06PDK
Typical Characteristics (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)=240A
100
10
ID(DC)=60A
1
Power Dissipation Limited
0.1
0.01
TC=25℃
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 1.43°C/W
1
0.1
0.01
Single pulse
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 4 of 7
NP60N06PDK
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
250
200
150
100
50
100
VGS=10V
10
1
TA=175°C
75°C
25°C
-55°C
VGS=4.5V
0.1
0.01
0.001
VDS = 10V
Pulsed
Pulsed
0
0
1
2
3
0
1
2
3
4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
3
2
1
0
100
TA=175°C
150°C
75°C
25°C
-55°C
10
VDS = VGS
VDS = 5V
Pulsed
ID=250 A
μ
1
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
25
20
15
10
5
Pulsed
VGS=10V
4.5V
10
5
ID=30A
Pulsed
0
0
0
5
10
15
20
0.1
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 5 of 7
NP60N06PDK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
15
10
5
Pulsed
Ciss
VGS=4.5V
ID=15A
1000
100
10
Coss
VGS=10V
ID=30A
Crss
VGS = 0V
f = 1.0MHz
0
0.01
0.1
1
10
100
-100
-50
0
50
100
150
200
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
50
10
8
1000
100
10
VDD = 30V
VDD= 48V
30V
V
GS=10V
RG=0Ω
40
30
20
10
0
12V
6
td(off)
td(on)
VGS
4
tr
2
VDS
tf
ID=60A
0
1
0
5
10 15 20 25 30 35 40
QG - Gate Charge - nC
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
10
1
VGS=10V
100
10
1
4.5V
0V
di/dt = 100A/μs
VGS = 0V
Pulsed
1
0.1
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.2
VF(S-D) - Source to Drain Voltage - V
IF - Drain Current - A
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 6 of 7
NP60N06PDK
Package Drawings (Unit: mm)
TO-263 (MP-25ZP) (Mass: 1.48 g TYP.)
Renesas package code: PRSS0004AL-A
10.0 0.ꢀ
7.88 MIN.
4
4.45 0.2
No plating
1.ꢀ 0.2
0.025
to 0.25
0.5
0.75 0.2
2.54
0.25
1
2
ꢀ
1. Gate
2. Drain
ꢀ. Source
4. Fin (Drain)
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 7 of 7
Revision History
NP60N06PDK Data Sheet
Description
Summary
Rev.
Date
Page
—
1.00
1.01
Oct. 26, 2015
Dec. 21, 2015
First Edition Issued
Modification of Repetitive Avalanche Energy(83mJ→63mJ)
2
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