NP90N03VLG-E1-AY [RENESAS]
MOS FIELD EFFECT TRANSISTOR; MOS场效应型号: | NP90N03VLG-E1-AY |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | MOS FIELD EFFECT TRANSISTOR |
文件: | 总8页 (文件大小:231K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Data Sheet
R07DS0129EJ0100
Rev.1.00
NP90N03VLG
MOS FIELD EFFECT TRANSISTOR
Description
Sep 24, 2010
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Low on-state resistance
⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
Low input capacitance
⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
Designed for automotive application and AEC-Q101 qualified
•
•
Ordering Information
Part No.
NP90N03VLG-E1-AY∗
NP90N03VLG-E2-AY∗
LEAD PLATING
PACKING
Tape 2500 p/reel
Package
1
Pure Sn (Tin)
TO-252, Taping (E1 type)
TO-252, Taping (E2 type)
1
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
30
20
VGSS
ID(DC)
ID(pulse)
PT1
V
90
A
1
Drain Current (pulse) ∗
360
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
105
W
W
°C
°C
A
PT2
1.2
Tch
175
Storage Temperature
Repetitive Avalanche Current ∗
Repetitive Avalanche Energy ∗
Tstg
−55 to +175
41
2
IAR
2
EAR
168
mJ
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 1 of 6
NP90N03VLG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Symbol
IDSS
Min
Typ
Max
1
Unit
μA
μA
V
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
VDS = 30 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IGSS
10
Gate to Source Threshold Voltage VGS(th)
Forward Transfer Admittance ∗
1.4
30
1.8
67
2.5
VDS = VGS, I = 250 μ A
D
1
| yfs |
RDS(on)1
RDS(on)2
Ciss
S
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VGS = 4.5 V, ID = 35 A
VDS = 25 V,
Drain to Source On-state
2.5
3.8
5000
600
420
17
3.2
8.0
mΩ
mΩ
pF
pF
pF
ns
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
7500
900
760
34
Coss
Crss
td(on)
tr
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 45 A,
VGS = 10 V,
13
33
ns
Turn-off Delay Time
Fall Time
td(off)
tf
73
146
23
ns
RG = 0 Ω
9
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗
Reverse Recovery Time
Reverse Recovery Charge
Note: ∗1. Pulsed
QG
90
135
nC
nC
nC
V
VDD = 24 V,
VGS = 10 V,
ID = 90 A
QGS
QGD
VF(S-D)
trr
13
26
1
0.9
42
1.5
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μs
ns
Qrr
35
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
V
GS = 20 → 0 V
V
DS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ
= 1
μ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
R
L
PG.
50 Ω
V
DD
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 2 of 6
NP90N03VLG
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
ID(pul se)
ID(DC)
i
1 ms
i
1
i
10 ms
i
TC = 25 C
°
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A)
= 125 C/W
°
R
th(ch-C)
= 1.43 C/W
°
1
0.1
Single Pulse
100 1000
0.01
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 3 of 6
NP90N03VLG
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
400
300
200
100
1000
100
Tch = -55°C
-25°C
Puls ed
VGS = 10 V
25°C
10
75°C
125°C
150°C
175°C
1
4.5 V
0.1
0.01
0.001
0.0001
VDS = 10 V
Puls ed
0
0
0.5
1
1.5
2
0
1
2
3
4
5
V
DS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
3
2
1
0
100
Tch = -55°C
-25°C
VDS = VGS
25°C
75°C
125°C
150°C
175°C
ID = 10 mA
1 mA
10
250
A
μ
VDS = 5 V
Pulsed
1
-75
-25
25
75
125
175
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
6
5
4
3
2
Puls ed
5
4
3
2
1
0
VGS = 4.5
10 V
1
ID = 45 A
Puls ed
0
1
10
100
1000
0
10
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 4 of 6
NP90N03VLG
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
6
100000
VGS = 0 V
f = 1 MHz
ID = 45 A
Puls ed
5
VGS = 4.5 V
10000
1000
100
4
C
10 V
iss
3
2
1
0
Coss
C
rss
0.01
0.1
1
10
100
-75
-25
25
75
125
175
V
DS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
1000
10
8
VDD = 15 V
GS = 10 V
RG = 0 Ω
V
40
30
20
10
0
VDD = 24 V
15 V
td(off)
100
10
1
VGS
6 V
6
tf
td(on)
4
tr
2
VDS
40
ID = 90 A
0
0.1
1
10
100
0
20
60
80
100
ID - Drain Current - A
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
100
0 V
VGS = 10 V
10
1
0.1
0.01
0.001
di/dt = 100 A/ s
μ
VGS = 0 V
Pulsed
10
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IF - Drain Current - A
VF(S-D) - Source to Drain Voltage - V
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 5 of 6
NP90N03VLG
Chapter Title
Package Drawings (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.27 g TYP.)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1.13
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 6 of 6
Revision History
NP90N03VLG
Description
Summary
Rev.
1.00
Date
Page
Sep 24, 2010
−
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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