NV4V31MF_12 [RENESAS]
Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source; 蓝紫色激光二极管405nm的蓝紫色激光光源
| 型号： | NV4V31MF_12 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source |
| 文件： | 总9页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NV4V31MF
Blue-Violet Laser Diode
R08DS0045EJ0100
Rev.1.00
Mar 05, 2012
405 nm Blue-Violet Laser Light Source
DESCRIPTION
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
High optical output power
Peak emission wavelength
Wide operating temperature range
φ 3.8 mm small CAN package
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
APPLICATIONS
•
Blue-violet laser light source
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 1 of 7
NV4V31MF
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
X
WITH GLASS
90° 2°
φ
EFFECTIVE
DIAMETER
Y
φ
0.65 MIN.
0.25 0.07
+0.0
φ
3.8–0.025
φ
φ
3.1 MAX.
2.42 0.1
LD CHIP
0.2 MIN.
Z
STEM
REFERENCE
PLAIN
3–
φ
0.3 0.05
P.C.D.
1.43 0.15
φ
1
1
2
3
LD
3 (Stem GND)
0.2 0.1
2
PIN CONNECTIONS
BOTTOM VIEW
Remarks 1. Cap glass thickness: 0.25 0.03 mm
Cap glass refractive index:1.53 (λ = 405 nm)
2. Position accuracy of the LD chip based on the center of stem
Δ
Δ
Δ
x = 80
μ
μ
m
m
y = 80
μ
z = 80 m (*1)
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 2 of 7
NV4V31MF
Chapter Title
<R>
ORDERING INFORMATION
Part Number
Order Number
Rank
GV
Package
NV4V31MF
NV4V31MF-A
Tray Packaging (250 p/Tray)
KV
Individual Packaging (for small samples)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
Po
Ratings
180
Unit
mW
mW
V
Optical Output Power (CW)
Optical Output Power (pulse) *1
Reverse Voltage of LD
Pp
360
VR
2
Operating Case Temperature
Storage Temperature
TC
−5 to +85
−40 to +85
°C
°C
Tstg
Note: *1. Pulse condition: PW ≤ 50 ns, Duty ≤ 50%
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter
Symbol
MAX.
Unit
Optical Output Power (CW)
Po
175
mW
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter
Threshold Current
Symbol
Ith
Conditions
MIN.
TYP.
35
MAX.
Unit
mA
mA
V
CW
55
200
6.5
Operating Current
Iop
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
150
5.0
1.55
405
9
Optical Voltage
Vop
ηd
λp
θ//
θ⊥
Slope Efficiency
1.1
400
6
W/A
nm
Peak Wavelength
415
12
25
3
Beam Divergence (lateral)
Beam Divergence (vertical)
deg.
15
−3
20
Position Accuracy Angle
(lateral)
Δθ//
CW, Po = 175 mW
0
deg.
Position Accuracy Angle
(vertical)
Δθ⊥
−3
0
3
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 3 of 7
NV4V31MF
Chapter Title
<R>
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
FORWARD VOLTAGE vs.
FORWARD CURRENT
200
180
160
140
120
100
80
10
8
20°C
60°C
70°C
80°C
90°C
25°C
30°C
40°C
50°C
20°C
25°C
30°C
40°C
50°C
60°C
70°C
80°C
90°C
6
4
60
40
2
20
0
0
0
50
100
150
(mA)
200
0
50
100
150
(mA)
200
Forward Current I
F
Forward Current I
F
POWER DEPENDENCE OF
DIFFERENTIAL EFFICIENCY
TEMPERATURE DEPENDENCE OF
DIFFERENTIAL EFFICIENCY
410
408
406
404
402
400
412
410
408
406
404
402
400
175 mW
N = 5
N = 5
0.011 nm/mW
0.064 nm/°C
0
50
100
150
200
0
20
40
60
80
100
Optical Output Power P
O
(mW)
Temperature (°C)
FFP (LATERAL)
FFP (VERTICAL)
175 mW
120 mW
80 mW
40 mW
175 mW
120 mW
80 mW
40 mW
−30
−20
−10
0
10
20
30
−30
−20
−10
0
10
20
30
Angle (degrees)
Angle (degrees)
Remark The graphs indicate nominal characteristics.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 4 of 7
NV4V31MF
Chapter Title
Wavelength Spectrum (100 mW)
Wavelength Spectrum (175 mW)
1.2
1
1.2
1
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
400
402
404
406
408
410
400
402
404
406
408
410
Wavelength λ (nm)
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 5 of 7
NV4V31MF
Chapter Title
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
•
•
•
•
Peak Temperature
Time
350°C or below
3 seconds or less
Soldering of leads should be made at the point 2.0 mm from the root of the lead
This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
•
Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
•
•
Make sure that the work table and soldering iron are grounded.
Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the base of the lead.
(3) Do not allow the glass window of the package to become scratched or dirty.
Also, do not subject the glass window to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the aluminum moisture barrier bag.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 6 of 7
NV4V31MF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
VISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Visible
OUTPUT POWER 450 mW MAX
Laser Radiation is emitted from
this aperture
WAVELENGTH 400 to 420 nm
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
Warning Laser Beam
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 7 of 7
Revision History
NV4V31MF Data Sheet
Description
Summary
Rev.
Date
Page
0.01
1.00
Sep 08, 2011
Mar 05, 2012
−
First edition issued
Throughout Preliminary Data Sheet -> Data Sheet
p.3
Modification of ORDERING INFORMATION
Addition of TYPICAL CHARACTERISTICS
p.4, 5
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C - 1
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