NX6240GP [RENESAS]
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION; 激光二极管1 270 nm的AlGaInAs MQW - DFB激光二极管，用于10 Gb / s的E- PON ONU应用
| 型号： | NX6240GP |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION |
| 文件： | 总7页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NX6240GP
LASER DIODE
R08DS0057EJ0100
Rev.1.00
1 270 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s E-PON ONU APPLICATION
Mar 01, 2012
DESCRIPTION
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
•
10 Gb/s E-PON ONU
FEATURES
•
•
•
•
•
•
•
Optical output power
Low threshold current
Differential efficiency
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
PO = 8.5 mW
Ith = 8 mA
ηd = 0.3 W/A
TC = −5 to +85°C
φ 5.6 mm
10.2 mm
Focal point
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 1 of 5
NX6240GP
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
(
φ
5.6)*2
4.3)*2
(
φ
(
φ
3.75)*2
1.0 0.1
BOTTOM VIEW
1
4
2
(0.3)*2
3
Focal Point*1
PIN CONNECTION
1
LD
4
2
3
PD
φ
4– 0.45
φ
2.0
P.C.D
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 2 of 5
NX6240GP
Chapter Title
ORDERING INFORMATION
Part Number
Package
4-pin CAN with aspherical lens cap
Pin Connections
1
NX6240GP
LD
4
2
3
PD
Remarks 1. The color of lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 3 of 5
NX6240GP
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Optical Output Power
Symbol
PO
Ratings
15
Unit
mW
mA
V
Forward Current of LD
IF
120
Reverse Voltage of LD
VR
2.0
Forward Current of PD
IF
10.0
mA
V
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
VR
15
TC
−5 to +85
−40 to +95
350 (3 sec.)
85
°C
°C
°C
%
Tstg
Tsld
RH
Lead Soldering Temperature
Relative Humidity (noncondensing)
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL
Parameter
Bias Current
Symbol
Conditions
TC = 25°C
MIN.
TYP.
MAX.
Unit
Ibias
−
30
−
mA
ELECTRO-OPTICAL CHARACTERISTICS
(TC = −5 to +85°C, CW, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
−
−
2.0
15
Unit
Gb/s
mW
V
Signalling Rate
−
−
10.3125
Optical Output Power
Operating Voltage
Threshold Current
PO
Vop
Ith
8.5
−
PO = 8.5 mW
−
TC = 25°C
−
8
mA
−
−
30
Differential Efficiency
ηd
PO = 8.5 mW, TC = 25°C
PO = 8.5 mW
0.3
0.16
1 260
35
−
0.35
−
−
−
−
−
−
W/A
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
λp
SMSR
PO = 8.5 mW
1 280
−
nm
dB
ps
PO = 8.5 mW
tr
tf
20-80% *1
50
Fall Time
80-20% *1
−
−
50
ps
Monitor Current
Im
ID
VR = 1.5 V, PO = 8.5 mW
VR = 3.3 V, TC = 25°C
VR = 3.3 V
100
−
−
−
−
−
−
1 000
10
μA
nA
Monitor Dark Current
100
20
Monitor PD Terminal
Capacitance
Tracking Error *2
Ct
VR = 3.3 V, f = 1 MHz
−
pF
dB
γ
Im = const. (@PO = 8.5 mW,
−0.9
−
0.9
TC = 25°C)
Note: 1. 10.3125 Gb/s, PRBS 231 − 1, NRZ, Duty Cycle = 50%
2. Tracking Error: γ
Po
P
8.5
o
γ = 10 log
[dB]
(mW)
TC
= 25°C
8.5
TC = –5 to +85°C
Po
Im
0
I
m
(mA)
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 4 of 5
NX6240GP
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
OUTPUT POWER
WAVELENGTH
mW MAX
nm
Laser Radiation is emitted from
this aperture
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Warning Laser Beam
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 5 of 5
Revision History
NX6240GP Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Mar 01, 2012
−
First edition issued
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C - 1
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Colophon 1.1
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