PS2581L1-M [RENESAS]
Transistor Output Optocoupler, 1-Element, 5000V Isolation, PLASTIC, DIP-4;
| 型号： | PS2581L1-M |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Transistor Output Optocoupler, 1-Element, 5000V Isolation, PLASTIC, DIP-4 输出元件 光电 |
| 文件： | 总11页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
Long creepage and clearance distance (8 mm)
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 80 V)
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
High current transfer ratio (CTR = 200 % TYP.)
UL approved: File No. E72422 (S)
CSA approved: No. CA101391
BSI approved: No. 8243/8244
NEMKO approved: No. P97103006
DEMKO approved: No. 307269
SEMKO approved: No. 9741154/01
FIMKO approved: No. 018277
VDE0884 approved
ORDERING INFORMATION (Solder Contains Lead)
Part Number
PS2581L1
Package
Safety Standard Approval
UL, CSA, BSI, NEMKO, DEMKO,
SEMKO, FIMKO, VDE approved
Application Part Number *1
PS2581L1
4-pin DIP
4-pin DIP
PS2581L2
PS2581L2
(lead bending surface mount)
PS2581L2-E3, E4
4-pin DIP taping
*1 As applying to Safety Standard, following part number should be used.
ORDERING INFORMATION (Pb-Free)
Part Number
PS2581L1-A
Package
Safety Standard Approval
UL, CSA, BSI, NEMKO, DEMKO,
SEMKO, FIMKO, VDE approved
Application Part Number *1
PS2581L1
4-pin DIP
4-pin DIP
PS2581L2-A
PS2581L2
(lead bending surface mount)
PS2581L2-E3, E4-A
4-pin DIP taping
*1 As applying to Safety Standard, following part number should be used.
Document No. PN10239EJ01V0DS (1st edition)
(Previous No. P12809EJ2V0DS00)
Date Published February 2003 CP(K)
The mark shows major revised points.
PS2581L1,PS2581L2
PACKAGE DIMENSIONS (in millimeters)
PS2581L1
4.6±0.35
1.0±0.2
TOP VIEW
3
4
1
1. Anode
2. Cathode
3. Emitter
4. Collector
2
10.16
7.62
0.50±0.1
0.25 M
2.54
1.25±0.15
0 to 15˚
PS2581L2
4.6±0.35
1.0±0.2
TOP VIEW
3
4
1
1. Anode
2. Cathode
3. Emitter
4. Collector
2
10.16
7.62
1.25±0.15
0.9±0.25
0.25 M
2.54
12.0 MAX.
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
8 mm
Outer Creepage Distance
Inner Creepage Distance
Isolation Distance
8 mm
4 mm
0.4 mm
2
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
Unit
Diode
Forward Current (DC)
Reverse Voltage
80
mA
V
VR
6
Power Dissipation Derating
Power Dissipation
∆PD/°C
PD
1.5
mW/°C
mW
A
150
Peak Forward Current *1
IFP
1
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
80
V
7
50
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
150
Isolation Voltage *2
BV
5 000
Operating Ambient Temperature
Storage Temperature
TA
−55 to +100
−55 to +150
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.17
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 10 mA
VR = 5 V
IR
µA
pF
nA
Ct
V = 0 V, f = 1.0 MHz
VCE = 80 V, IF = 0 mA
50
Collector to Emitter Dark
Current
Transistor
Coupled
ICEO
100
Current Transfer Ratio (IC/IF) *1
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time *2
CTR
VCE(sat)
RI-O
CI-O
tr
IF = 5 mA, VCE = 5 V
IF = 10 mA, IC = 2 mA
VI-O = 1.0 kVDC
80
200
400
0.3
%
V
1011
Ω
V = 0 V, f = 1.0 MHz
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
0.5
3
pF
µs
Fall Time *2
tf
5
*1 CTR rank
L : 200 to 400 (%)
M : 80 to 240 (%)
D : 100 to 300 (%)
H : 80 to 160 (%)
W : 130 to 260 (%)
N : 80 to 400 (%)
*2 Test circuit for switching time
Pulse Input
V
CC
µ
PW = 100
Duty Cycle = 1/10
s
I
F
V
OUT
50 Ω
RL = 100 Ω
4
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
100
150
100
50
50
0
100
Ambient Temperature T
25
50
75
125
(˚C)
150
0
25
50
75
100
125
(˚C)
150
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
70
T
A
= +100 ˚C
+60 ˚C
60
50
40
30
20
10
+25 ˚C
10
5
0 ˚C
–25 ˚C
–55 ˚C
1
0.5
IF = 5 mA
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward Voltage V (V)
0
4
8
10
2
6
Collector to Emitter Voltage VCE (V)
F
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
1 000
100
10
V
CE = 80 V
40 V
10
5
24 V
10 V
5 V
IF
= 1 mA
1
0.5
1
0.1
–50
–25
0
25
50
75
100
1.0
0
0.2
0.4
0.6
0.8
Ambient Temperature T (˚C)
A
Collector Saturation Voltage VCE(sat) (V)
5
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
450
1.2
1.0
0.8
0.6
0.4
0.2
0
400
350
300
250
200
150
100
50
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, VCE = 5 V
0
–50
0.05 0.1
0.5
Forward Current I
–25
0
25
50
75
100
1
5
10
50
Ambient Temperature T
A
(˚C)
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
50
10
1 000
100
10
t
f
I
V
C
= 2 mA,
I
V
F
= 5 mA,
CC = 5 V,
CTR = 290 %
t
f
CC = 10 V,
tr
CTR = 290 %
µ
µ
ts
td
ts
1
tr
t
d
0.1
10
1
100
10 k
5 k
50 100
500
1 k
(Ω)
500 1 k
5 k 10 k
(Ω)
50 k 100 k
Load Resistance R
L
Load Resistance R
L
FREQUENCY RESPONSE
LONG TERM CTR DEGRADATION
1.2
1.0
0.8
0.6
0.4
0.2
I
V
F
= 5 mA,
CE = 5 V
TYP.
0
–5
I = 5 mA
F
TA
= 25 ˚C
–10
–15
–20
100 Ω
I
F
= 5 mA
A
T = 60 ˚C
RL = 1 kΩ
300 Ω
10 20 50 100200 500
Frequency f (kHz)
0
103
Time (Hr)
0.5
1
2
5
102
104
105
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0 0.1
4.0 0.1
4.4 0.2
1.55 0.1
0.38
2.05 0.1
6.6 0.2
12.0 0.1
Tape Direction
PS2581L2-E3
PS2581L2-E4
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
13.0 0.2
R 1.0
21.0 0.8
25.5 1.0
29.5 1.0
23.9 to 27.4
Outer edge of
flange
Packing: 1 000 pcs/reel
7
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
• Time of temperature higher than 220°C
10 seconds or less
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
8
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
9
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Application classification (DIN VDE 0109)
Symbol
Speck
Unit
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength maximum operating isolation voltage.
Test voltage (partial discharge test procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
890
Vpeak
Upr
1 068
Vpeak
Test voltage (partial discharge test procedure b for all devices test)
Upr
1 424
Vpeak
Vpeak
Upr = 1.6 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
8 000
2
> 8.0
mm
mm
Creepage distance
> 8.0
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
175
III a
Tstg
TA
−55 to +150
−55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
109
Ω
10
Data Sheet PN10239EJ01V0DS
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
(*)
Lead (Pb)
Mercury
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Not Detected
Not Detected
Cadmium
Hexavalent Chromium
PBB
Not Detected
Not Detected
Not Detected
Not Detected
PBDE
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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