PS2861B-1Y-V-F3-A-M [RENESAS]
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, LEAD FREE, SOP-8;
| 型号： | PS2861B-1Y-V-F3-A-M |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, LEAD FREE, SOP-8 输出元件 光电 |
| 文件： | 总15页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
R08DS0100EJ0300
Rev.3.00
PS2861B-1
4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C
Jan 23, 2013
DESCRIPTION
The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for
high density applications.
Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal
transfer circuits that require surface or high-density mounting.
FEATURES
•
•
•
•
•
•
•
•
Operating ambient temperature: 110°C
Isolation distance (0.4 mm MIN.)
PIN CONNECTION
(Top View)
High isolation voltage (BV = 3 750 Vr.m.s.)
Shrink SOP (Small Outline Package) type
High-speed switching (tr = 4μs TYP., tf = 5μs TYP.)
Embossed tape product: PS2861B-1-F3: 3 500 pcs/reel
Pb-Free product
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
Safety standards
<R>
•
•
•
•
•
•
UL approved: No. E72422
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
BSI approved (BS EN 60065, BS EN 60950)
SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN60950)
CQC approved (GB8898, GB4943)
1
2
DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
•
•
Power supply
Programmable logic controllers
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 1 of 13
PS2861B-1
PACKAGE DIMENSIONS (UNIT: mm)
2.7 0.ꢀ
4
ꢀ
7.0 0.ꢀ
4.4
1
2
0.5 0.ꢀ
1.27
M
0.4 0.1 0.12
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
5.0 mm
5.0 mm
0.4 mm
Creepage Distance
Isolation Distance
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 2 of 13
PS2861B-1
MARKING EXAMPLE
<R>
Company initial
Made in Taiwan
Last 2 numbers of type
No. : 1B
Assembly Lot
3 0 1
Week Assembled
Year Assembled (Last 1 digit)
Made in Taiwan
Halogen free
"
" (Vertical bar)
:Made in Taiwan & Halogen free
Made in Japan
"
" (Square)
:Made in Japan
Made in Japan
Halogen free
"
" (Horizontal bar)
:Made in Japan & Halogen free
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 3 of 13
PS2861B-1
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Packing Style
Safety Standard
Approval
Application
Part Number*1
PS2861B-1-F3
PS2861B-1Y-F3-A
Pb-Free and
Halogen Free
Embossed Tape Standard products
PS2861B-1
3 500 pcs/reel
(UL, CSA, BSI,
SEMKO, NEMKO,
DEMKO, FIMKO,
CQC approved)
PS2861B-1-V-F3 PS2861B-1Y-V-F3-A
Embossed Tape DIN EN 60747-5-5
3 500 pcs/reel
(VDE 0884-5)
approved (Option)
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Diode
Forward Current (DC)
Reverse Voltage
IF
50
mA
VR
6
V
Power Dissipation Derating
Power Dissipation
Peak Forward Current*1
Peak Forward Current*2
ΔPD/°C
PD
0.6
mW/°C
mW
A
60
IFP1
IFP2
VCEO
VECO
IC
2.5
1.0
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
70
V
V
5
50
mA
Power Dissipation Derating
Power Dissipation
Isolation Voltage*3
ΔPC/°C
PC
1.2
mW/°C
mW
Vr.m.s.
°C
120
BV
3 750
Operating Ambient Temperature
Storage Temperature
TA
–55 to +110
–55 to +150
Tstg
°C
Notes: *1. PW = 10 μs, Duty Cycle = 1%
*2. PW = 100 μs, Duty Cycle = 1%
*3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 4 of 13
PS2861B-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
VF
IR
IF = 5 mA
VR = 5 V
1.1
μA
Terminal
Capacitance
Ct
V = 0 V, f = 1 MHz
15
pF
nA
%
Transistor Collector to Emitter
Dark Current
ICEO
CTR
IF = 0 mA, VCE = 24 V
100
300
Coupled
Current Transfer
Ratio (IC/IF)*1
IF = 5 mA, VCE = 5 V
IF = 1 mA, VCE = 5 V
50
10
150
50
Collector Saturation
Voltage
VCE (sat) IF = 10 mA, IC = 2 mA
0.3
V
Ω
Isolation Resistance
RI-O
CI-O
VI-O = 1 kVDC
1011
Isolation
Capacitance
Rise Time*2
Fall Time*2
Turn-on Time*2
Turn-off Time*2
V = 0 V, f = 1 MHz
0.4
pF
μs
tr
tf
VCC = 5 V, IC = 2 mA, RL = 100 Ω
4
5
5
5
ton
toff
<R>
<R>
Notes: *1. CTR rank
CTR rank
CTR (%)
Conditions
L
100 to 300
IF = 5 mA, VCE = 5 V
20 and larger IF = 1 mA, VCE = 5 V
50 to 150 IF = 5 mA, VCE = 5 V
10 and larger IF = 1 mA, VCE = 5 V
50 to 300 IF = 5 mA, VCE = 5 V
10 and larger IF = 1 mA, VCE = 5 V
M
N
*2. Test Circuit for Switching Time
Pulse Input
PW = 100
V
V
CC
Input
μ
s
Duty cycle = 1/10
ton
toff
ts
td
I
F
In monitor
OUT
90%
50 Ω
RL = 100 Ω
Output
10%
tr
tf
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 5 of 13
PS2861B-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
80
60
40
20
1.2 mW/°C
0.6 mW/°C
180
160
140
120
100
80
60
40
20
0
25
50
75
100110 125
(°C)
150
0
25
50
75
100110 125
150
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
30
T
A
= +100°C
+60°C
25
20
15
10
5
+25°C
10
5
IF = 10 mA
0°C
–25°C
–55°C
1
5 mA
0.5
3 mA
2 mA
1 mA
0.1
0.05
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
1
2
3
4
5
6
7
8
9
10
Forward Voltage V (V)
F
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 000
1 000
100
10
100.0
V
CE = 24 V
I = 10 mA
F
5 mA
10.0
3 mA
2 mA
1 mA
1.0
0.1
1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Saturation Voltage VCE (sat) (V)
0
20
40
60
80
100
120
Ambient Temperature T
A
(°C)
Remark The graphs indicate nominal characteristics.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 6 of 13
PS2861B-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
CTR = 160%@T = 25°C
A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100%@T
A
= 25°C
= 25°C
100%@T = 25°C
A
CTR = 160%@T
A
Normalized to 1.0
at T = 25°C,
= 1 mA, VCE = 5 V
Normalized to 1.0
at T = 25°C,
= 5 mA, VCE = 5 V
A
A
IF
IF
–60 –40 20 20 40 60 80 100 120
–
0
–60 –40 20 20 40 60 80 100 120
–
0
Ambient Temperature T (°C)
A
Ambient Temperature T (°C)
A
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
100
10
1
I
C
= 2 mA, VCC = 5 V,
I
F
= 5 mA, VCC = 5 V,
CTR = 100%
CTR = 100%
t
f
t
t
f
100
r
μ
μ
t
s
10
t
d
t
s
t
r
t
d
1
0.1
0.1
0.1
1
10
100
10
100
1 000
(Ω)
10 000
Load Resistance R
L
Load Resistance R (kΩ)
L
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
FREQUENCY RESPONSE
5
0
5
300
250
200
150
100
50
V
n = 3
CE = 5 V,
–
100 Ω
Sample A
–
–
–
–
10
15
20
25
B
C
300 Ω
RL = 1 kΩ
IF = 5 mA,
VCE = 5 V
0
0.1
1
10
Frequency f (kHz)
100
1 000
0.1
1
10
100
Forward Current I
F
(mA)
Remark The graphs indicate nominal characteristics.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 7 of 13
PS2861B-1
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0 0.1
+0.1
1.5
–0
4.0 0.1
φ
2.ꢀ MAX.
0.3
1.55 0.1
4.0 0.1
2.3 0.1
2.ꢀ5 0.1
Tape Direction
PS2ꢀ61B-1-F3
<R>
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
13.0 0.2
φ
φ
R 1.0
φ
φ
21.0 0.ꢀ
17.5 1.0
21.5 1.0
15.9 to 19.4
Outer edge of
flange
Packing: 3 500 pcs/reel
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 8 of 13
PS2861B-1
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
1.45
6.25
Remark All dimensions in this figure must be evaluated before use.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 9 of 13
PS2861B-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
•
•
•
•
•
•
Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
60 seconds or less
120 30 s
Time of peak reflow temperature
Time of temperature higher than 220°C
Time to preheat temperature from 120 to 180°C
Number of reflows
Three
Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
•
•
•
•
•
Temperature
Time
260°C or below (molten solder temperature)
10 seconds or less
Preheating conditions 120°C or below (package surface temperature)
Number of times
Flux
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
•
•
•
Peak Temperature (lead part temperature) 350°C or below
Time (each pin)
3 seconds or less
Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a)Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
<R>
(4) Cautions
Fluxes
•
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 10 of 13
PS2861B-1
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 11 of 13
PS2861B-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1)
55/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
UIORM
Upr
710
1 136
Vpeak
Vpeak
<R>
<R>
Upr = 1.6 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Upr
1 331
Vpeak
Vpeak
UTR
6 000
2
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
CTI
175
Material group (DIN EN 60664-1 VDE0110 Part 1)
Storage temperature range
III a
Tstg
TA
–55 to +150
–55 to +110
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Tsi
Isi
Psi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Ris MIN.
109
Ω
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 12 of 13
PS2861B-1
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0100EJ0300 Rev.3.00
Jan 23, 2013
Page 13 of 13
Revision History
PS2861B-1 Data Sheet
Description
Summary
Rev.
Date
Page
1.00
3.00
Jan 28, 2009
Jan 23, 2013
−
This data sheet was released as PN10742EJ01V0DS
Throughout Renesas format is applied to this data sheet.
p.1
p.3
p.4
The safety standards are revised.
The explanation in MARKING EXAMPLE is revised.
ORDERING INFORMATION is modified with the revision of the safety
standards.
p.5
Turn-on Time (ton) and Turn-off Time(toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
p.8
The image in Tape Direction is revise.
p.10
The note about temperature condition of the recommended soldering
conditions is deleted.
p.12
The value of Upr is changed from the value, 1 065 and the factor, 1.5 of UIORM
is changed from 1 136 and 1.6, respectively.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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