PS2911-1M-V-AX [RENESAS]
PS2911-1M-V-AX;
| 型号： | PS2911-1M-V-AX |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | PS2911-1M-V-AX |
| 文件： | 总14页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
PS2911-1
R08DS0110EJ0300
Rev.3.00
May 24, 2013
HIGH CTR, 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER
DESCRIPTION
The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in one package for high density mounting applications.
An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30% compared
with the PS28xx series.
FEATURES
•
•
•
•
•
Ultra small flat-lead package (4.6 (L) × 2.5 (W) × 2.1 (H) mm)
High current transfer ratio (CTR = 200% TYP. @ IF = 1 mA, VCE = 5 V)
High isolation voltage (BV = 2 500 Vr.m.s.)
Ordering number of taping product: PS2911-1-F3: 3 500 pcs/reel
Safety standards
• UL approved: No. E72422
• BSI approved (BS EN 60065, BS EN 60950)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
PIN CONNECTION
(Top View)
4
3
<R>
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
APPLICATIONS
•
•
DC/DC converter
Modem/PC card
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 1 of 12
PS2911-1e
<R>
PACKAGE DIMENSIONS (UNIT: mm)
2.5 0.3
4
3
R
1
2
5.0 0.2
0.4 0.1
0.2 0.1
1.27
<R> MARKING EXAMPLE
Ni/Pd/Au PLATING
Last number of
type No. : 11
*1
11
Company initial
(Engraved R)
R
Assembly lot
601
No. 1 pin
mark
(Nicked
corner)
3 01
Week assembled
Year Assembled
(Last 1 Digit)
*1 Bar : Pb-Free
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
MIN.
4 mm
4 mm
Creepage Distance
Isolation Distance
0.4 mm
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 2 of 12
PS2911-1e
<R>
ORDERING INFORMATION
Part Number
Order Number Solder Plating
Packing Style
Safety Standard
Approval
Application
Part
Specification
Number*1
PS2911-1
PS2911-1-AX
Pb-Free
50 pcs (Tape 50 pcs cut) Standard products
PS2911-1
PS2911-1-F3
PS2911-1-F3-
AX
(Ni/Pd/Au)
Embossed Tape 3 500
pcs/reel
(UL, BSI approved)
PS2911-1-V
PS2911-1-V-AX
50 pcs (Tape 50 pcs cut) DIN EN 60747-5-5
PS2911-1-V-F3 PS2911-1-V-F3-
AX
Embossed Tape 3 500
pcs/reel
(VDE 0884-5)
Approved (Option)
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
mA
Diode
Forward Current
IF
50
Forward Current Derating
Peak Forward Current *1
Power Dissipation
Reverse Voltage
ΔI
F
/°C
0.5
mA/°C
A
IFP
PD
0.5
60
mW
V
VR
6
Detector Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
40
V
5
40
V
mA
Power Dissipation Derating
Power Dissipation
Isolation Voltage *2
ΔP
C
/°C
1.2
mW/°C
mW
Vr.m.s.
mW
°C
PC
BV
PT
TA
Tstg
120
2 500
160
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
−55 to +100
−55 to +150
°C
Notes: *1. PW = 100 μs, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 3 of 12
PS2911-1e
<R>
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
MAX.
1.3
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 1 mA
VR = 5 V
0.9
1.1
IR
μA
pF
nA
Ct
V = 0 V, f = 1 MHz
15
Transistor Collector to Emitter Dark
Current
ICEO
IF = 0 mA, VCE = 40 V
100
400
0.3
Coupled
Current Transfer Ratio
CTR
IF = 1 mA, VCE = 5 V
100
200
%
V
*1
(IC/IF)
Collector Saturation
Voltage
VCE(SAT) IF = 1 mA, IC = 0.2 mA
0.13
Isolation Resistance
RI-O
CI-O
VI-O = 1 kVDC
1011
Ω
Isolation Capacitance
Rise Time *2
Fall Time *2
Turn-on Time *2
Storage Time *2
Turn-off Time *2
V = 0 V, f = 1 MHz
0.4
5
pF
tr
tf
VCC = 5 V, IC = 2 mA, RL = 100 Ω
μs
10
40
10
120
ton
ts
VCC = 5 V, IF = 1 mA, RL = 5 kΩ
μs
toff
Notes: *1. CTR rank
N
K
L
: 100 to 400 (%)
: 200 to 400 (%)
: 150 to 300 (%)
M : 100 to 200 (%)
*2. Test circuit for switching time
Pulse Input
Input
V
V
CC
t
on
PW = 100 s
μ
Duty cycle = 1/10
t
off
t
d
t
s
90%
I
F
I
C
In monitor
OUT
Output
50 Ω
RL = 100 Ω/5 kΩ
10%
t
f
t
r
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 4 of 12
PS2911-1e
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
<R>
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
80
60
40
20
140
120
100
80
60
0.5 mA/˚C
40
20
50
75
100
(˚C)
125
0
25
50
Ambient Temperature T
75
100
25
0
A
(˚C)
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
18
16
14
12
10
8
100
10
1
CTR = 200%
I = 5 mA
F
TA
= +100˚C
+60˚C
+25˚C
0˚C
–25˚C
–50˚C
2 mA
6
0.1
4
1 mA
0.5 mA
2
0.01
0.0
0.5
1.0
1.5
(V)
2.0
0
2
4
6
8
10
Forward Voltage V
F
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
10
CTR = 200%
5 mA
2 mA
1 mA
1 000
100
V
CE = 20 V
40 V
1
IF = 0.5 mA
10
1
0.1
0.0
–25
0
25
50
75
100
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage VCE(sat) (V)
Remark The graphs indicate nominal characteristics.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 5 of 12
PS2911-1e
NORMALIZED CURRENT TRANSFER
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
RATIO vs. AMBIENT TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
V
CE = 5 V,
n = 3
Sample A
B
C
Normalized to 1.0
100
0
at T
A
= 25˚C,
I
F
= 1 mA, VCE = 5 V
–50
–25
0
25
50
75
(˚C)
100
0.1
1
10
(mA)
100
Ambient Temperature T
A
Forward Current I
F
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
10 000
I
V
F
= 1 mA,
CC = 5 V,
CTR = 200%
0
–5
t
off
1 000
μ
100 Ω
300 Ω
R = 1 kΩ
L
100
–10
–15
–20
–25
t
s
t
on
10
1
1k
10k
100 k
(Ω)
1 000 k
0.1
1
10
100
1 000
Load Resistance R
L
Frequency f (kHz)
Remark The graphs indicate nominal characteristics.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 6 of 12
PS2911-1e
<R>
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0 0.05
+0.1
–0
4.0 0.1
1.5
2.9 MAX.
0.3
2.4 0.1
1.55 0.05
2.9 0.1
4.0 0.1
Tape Direction
PS2911-1-F3
R
R
R
R
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
13.0 0.2
13.5 1.0
11.9 to 15.4
Outer edge of
flange
Packing: 3 500 pcs/reel
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 7 of 12
PS2911-1e
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
1.27
0.8
0.6
(
) : Reference value
24-R0.1
Remark This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All dimensions in
this figure must be evaluated before use.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 8 of 12
PS2911-1e
<R>
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
•
•
•
•
•
•
Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
60 seconds or less
120±30 s
Three or less
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% or less is
recommended.)
Time of peak reflow temperature
Time of temperature higher than 220°C
Time to preheat temperature from 120 to 180°C
Number of reflows
Flux
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120 30 s
(preheating)
Time (s)
(2) Wave soldering
•
•
•
•
•
Temperature
Time
Preheating conditions
Number of times
Flux
260°C or below (molten solder temperature)
10 seconds or less
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum
chlorine content of 0.2 Wt% or less is recommended.)
(3) Soldering by Soldering Iron
•
•
•
Peak Temperature (lead part temperature) 350°C or below
Time (each pin)
3 seconds or less
Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% or less is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
•
Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 9 of 12
PS2911-1e
2. Cautions Regarding Noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 10 of 12
PS2911-1e
<R>
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1)
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
UIORM
Upr
570
912
Vpeak
Vpeak
Upr = 1.6 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Upr
1 068
Vpeak
Vpeak
Highest permissible overvoltage
UTR
4 000
2
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11))
CTI
175
Material group (DIN EN 60664-1 VDE0110 Part 1)
Storage temperature range
III a
Tstg
TA
–55 to +150
–55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Tsi
Isi
Psi
150
300
500
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Ris MIN.
109
Ω
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 11 of 12
PS2911-1e
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 12 of 12
Revision History
PS2911-1 Data Sheet
Description
Summary
Rev.
Date
Page
2.00
3.00
May 25, 2006
May 24, 2013
−
First edition issued
Throughout Renesas format is applied to this data sheet.
p.1
p.2
Modification of FEATURES
Modification of PACKAGE DIMENSIONS
Modification of MARKING EXAMPLE
p.3
p.4
Modification of ORDERING INFORMATION
Modification of ELECTRICAL CHARACTERISTICS
Modification of TAPING SPECIFICATIONS
Modification of NOTES ON HANDLING
p.7
p.9
p.11
Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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RENESAS
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