R1EX24032ASA00A_09 [RENESAS]
Two-wire serial interface 32k EEPROM (4-kword à 8-bit); 两线串行接口32K EEPROM （ 4千字的ΔΣ 8位）
| 型号： | R1EX24032ASA00A_09 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Two-wire serial interface 32k EEPROM (4-kword à 8-bit) |
| 文件： | 总24页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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R1EX24032ASA00A
R1EX24032ATA00A
Two-wire serial interface
32k EEPROM (4-kword × 8-bit)
REJ03C0346-0002
Preliminary
Rev.0.02
Jan.15, 2009
Description
R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They
also have a 32-byte page programming function to make their write operation faster.
Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as
cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s
sales office before using industrial applications such as automotive systems, embedded controllers,
and meters.
Features
•
•
•
•
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I2C serial bus)
Clock frequency: 400 kHz
Power dissipation:
Standby: 2 µA (max)
Active (Read): 1 mA (max)
Active (Write): 3.0 mA (max)
Automatic page write: 32-byte/page
Write cycle time: 5 ms
•
•
•
•
Endurance: 1,000k Cycles @ 25°C
Data retention: 100 Years @ 25°C
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Renesas Technology’s Sales Dept. regarding specifications.
REJ03C0346-0002 Rev.0.02 Jan.15, 2009
Page 1 of 20
R1EX24032Axx00A
•
•
Small size packages: SOP-8pin, TSSOP-8pin
Shipping tape and reel
TSSOP 8-pin: 3,000 IC/reel
SOP 8-pin: 2,500 IC/reel
•
•
Temperature range: −40 to +85°C
Lead free products.
Ordering Information
Type No.
Internal
Operating voltage Frequency Package
organization
R1EX24032ASA00A
32k bit
(4096× 8-bit)
1.8 V to 5.5 V
400 kHz
150 mil 8-pin plastic SOP
PRSP0008DF-B
(FP-8DBV)
Lead free
R1EX24032ATA00A
32k bit
(4096× 8-bit)
1.8 V to 5.5 V
400 kHz
8-pin plastic TSSOP
PTSP0008JC-B
(TTP-8DAV)
Lead free
Pin Arrangement
8-pin SOP/8-pin TSSOP
1
2
3
4
A0
8
7
6
5
VCC
WP
A1
A2
SCL
SDA
VSS
(Top view)
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 2 of 20
R1EX24032Axx00A
Pin Description
Pin name
A0 to A2
SCL
Function
Device address
Serial clock input
Serial data input/output
Write protect
SDA
WP
VCC
Power supply
Ground
VSS
NC
No connection
Block Diagram
High voltage generator
VCC
VSS
Memory array
WP
A0, A1, A2
SCL
Control
logic
Y-select & Sense amp.
Serial-parallel converter
SDA
Absolute Maximum Ratings
Parameter
Symbol
VCC
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
Storage temperature range
−0.6 to +7.0
−0.5*2 to +7.0*3
−40 to +85
V
Vin
V
Topr
Tstg
°C
°C
−55 to +125
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): −3.0 V for pulse width ≤ 50 ns.
3. Should not exceed VCC + 1.0 V.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 3 of 20
R1EX24032Axx00A
DC Operating Conditions
Parameter
Symbol
VCC
Min
1.8
0
Typ
Max
5.5
Unit
V
Supply voltage
VSS
0
0
V
Input high voltage
Input low voltage
VIH
V
CC × 0.7
VCC + 0.5
V
VIL
−0.3*1
VCC × 0.3
V
Operating temperature
Topr
−40
+85
°C
Notes: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.
DC Characteristics (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min
Typ
Max
2.0
2.0
2.0
1.0
3.0
0.4
0.2
Unit
µA
µA
µA
mA
mA
V
Test conditions
Input leakage current
Output leakage current
Standby VCC current
Read VCC current
Write VCC current
Output low voltage
ILI
VCC = 5.5 V, Vin = 0 to 5.5 V
VCC = 5.5 V, Vout = 0 to 5.5 V
Vin = VSS or VCC
ILO
ISB
1.0
ICC1
ICC2
VOL2
VOL1
VCC = 5.5 V, Read at 400 kHz
VCC = 5.5 V, Write at 400 kHz
VCC = 2.7 to 5.5 V, IOL = 3.0 mA
VCC = 1.8 to 2.7 V, IOL = 1.5 mA
V
Capacitance (Ta = +25°C, f = 1 MHz)
Test
Parameter
Symbol Min
Typ
Max
6.0
Unit
pF
conditions
Input capacitance (A0 to A2, SCL, WP) Cin*1
Vin = 0 V
Output capacitance (SDA)
CI/O*1
6.0
pF
Vout = 0 V
Note: 1. Not 100% tested.
Memory cell characteristics (VCC = 1.8 V to 5.5 V)
Ta=25°C
Ta=85°C
Notes
Endurance
1,000k Cycles min. 100k Cycles min
100 Years min. 10 Years min.
1
1
Data retention
Notes: 1. Not 100• tested.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 4 of 20
R1EX24032Axx00A
AC Characteristics (Ta = −40 to +85°C, VCC = 1.8 to 5.5 V)
Test Conditions
•
Input pules levels:
VIL = 0.2 × VCC
VIH = 0.8 × VCC
•
•
•
Input rise and fall time: ≤ 20 ns
Input and output timing reference levels: 0.5 × VCC
Output load: TTL Gate + 100 pF
Parameter
Symbol Min
Typ
Max
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Notes
Clock frequency
fSCL
400
Clock pulse width low
Clock pulse width high
Noise suppression time
Access time
tLOW
tHIGH
tI
1200
600
50
1
tAA
100
1200
600
600
0
900
Bus free time for next mode
Start hold time
tBUF
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start setup time
Data in hold time
Data in setup time
Input rise time
100
300
300
1
1
Input fall time
tF
Stop setup time
tSU.STO
tDH
600
50
Data out hold time
Write protect hold time
Write protect setup time
Write cycle time
tHD.WP
tSU.WP
tWC
1200
0
5
2
Notes: 1. Not 100% tested.
2. tWC is the time from a stop condition to the end of internally controlled write cycle.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 5 of 20
R1EX24032Axx00A
Timing Waveforms
Bus Timing
1/fSCL
tLOW
tR
tF
tHIGH
SCL
tSU.STA
tHD.DAT
tSU.DAT
tHD.STA
tSU.STO
SDA
(in)
tBUF
tAA
tDH
SDA
(out)
tSU.WP
tHD.WP
WP
Write Cycle Timing
Stop condition
Start condition
SCL
SDA
D0 in
tWC
(Internally controlled)
Write data
(Address (n))
ACK
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 6 of 20
R1EX24032Axx00A
Pin Function
Serial Clock (SCL)
The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge
clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is
400 kHz.
Serial Input/Output Data (SDA)
The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that
pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and
the SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later,
the SDA transition needs to be completed during the SCL low period.
Data Validity (SDA data change timing waveform)
SCL
SDA
Data
Data
change
change
Note:
High-to-low and low-to-high change of SDA should be done during the SCL low period.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 7 of 20
R1EX24032Axx00A
Device Address (A0, A1, A2)
Eight devices can be wired for one common data bus line as maximum. Device address pins are used to
distinguish each device and device address pins should be connected to VCC or VSS. When device address
code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one
device can be activated.
Pin Connections for A0 to A2
Pin connection
Max connect
Memory size number
A2
A1
A0
Note
32k bit
8
VCC/VSS
VCC/VSS
VCC/VSS
Note: 1. During floating, “VCC/VSS” are fixed to VSS.
Write Protect (WP)
When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in
the following table. When the WP is low, write operation for all memory arrays are allowed. The read
operation is always activated irrespective of the WP pin status.
Write Protect Area
Write protect area
WP pin status
32k bit
VIH
VIL
Upper 1/4 (8k bit)
Normal read/write operation
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 8 of 20
R1EX24032Axx00A
Functional Description
Start Condition
A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation
(See start condition and stop condition).
Stop Condition
A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts
after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the
write data inputs and place the device in a internally-timed write cycle to the memories. After the
internally-timed write cycle which is specified as tWC, the device enters a standby mode (See write cycle
timing).
Start Condition and Stop Condition
SCL
SDA
(in)
Start condition
Stop condition
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 9 of 20
R1EX24032Axx00A
Acknowledge
All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a
zero to acknowledge that it has received each word. This happens during ninth clock cycle. The
transmitter keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write
operation, EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation,
EEPROM sends a zero to acknowledge after receiving the device address word. After sending read data,
the EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an
acknowledge, it sends read data of next address. If the EEPROM receives acknowledgment "1" (no
acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode.
If the EEPROM receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open
without sending read data.
Acknowledge Timing Waveform
1
2
8
9
SCL
SDA IN
Acknowledge
out
SDA OUT
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 10 of 20
R1EX24032Axx00A
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device
address code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are
used to distinguish device type and this EEPROM uses “1010” fixed code. The device address word is
followed by the 3-bit device address code in the order of A2, A1, A0. The device address code selects one
device out of all devices which are connected to the bus. This means that the device is selected if the
inputted 3-bit device address code is equal to the corresponding hard-wired A2-A0 pin status. The
eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is
low and a read operation is initiated if this bit is high. Upon a compare of the device address word, the
EEPROM enters the read or write operation after outputting the zero as an acknowledge. The EEPROM
turns to a stand-by state if the device code is not “1010” or device address code doesn’t coincide with
status of the correspond hard-wired device address pins A0 to A2.
Device Address Word
Device address word (8-bit)
Device code (fixed)
Device address code
A2 A1
R/W code*1
32k
1
0
1
0
A0
R/W
Note: 1. R/W=“1” is read and R/W = “0” is write.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 11 of 20
R1EX24032Axx00A
Write Operations
Byte Write:
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends
acknowledgment "0" at the ninth clock cycle. After these, the 32kbit EEPROM receives 2 sequence 8-bit
memory address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0"
and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs
acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed
write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM
returns to a standby mode after completion of the write cycle.
Byte Write Operation
Device
address
1st Memory
address (n)
2nd Memory
address (n)
Write data (n)
W
1 0 1 0
32k
ACK
R/W
ACK
ACK
Stop
Start
Note: 1. Don't care bit
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 12 of 20
R1EX24032Axx00A
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop
condition. The a0 to a4 address bits are automatically incremented upon receiving write data (Dn+1).
The EEPROM can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the
last address of the page, the a0 to a4 address bits will roll over to the first address of the same page and
previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving
write data and enters internally-timed write cycle.
Page Write Operation
Device
address
1st Memory
address (n)
2nd Memory
address (n)
Write data (n)
ACK
Write data (n+m)
32k
W
1 0 1 0
ACK
R/W
ACK
ACK
ACK
Stop
Start
Note: 1. Don't care bit
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 13 of 20
R1EX24032Axx00A
Acknowledge Polling:
Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not.
This feature is initiated by the stop condition after inputting write data. This requires the 8-bit device
address word following the start condition during a internally-timed write cycle. Acknowledge polling
will operate when the R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM
is in a internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has
completed. See Write Cycle Polling using ACK.
Write Cycle Polling Using ACK
Send
write command
Send
stop condition
to initiate write cycle
Send
start condition
Send
device address word
with R/W = 0
No
No
ACK
returned
Yes
Next operation is
addressing the memory
Yes
Send
Send
Send
memory address
start condition
stop condition
Send
stop condition
Proceed random address
read operation
Proceed write operation
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 14 of 20
R1EX24032Axx00A
Read Operation
There are three read operations: current address read, random read, and sequential read. Read operations
are initiated the same way as write operations with the exception of R/W = “1”.
Current Address Read:
The internal address counter maintains the last address accessed during the last read or write operation,
with incremented by one. Current address read accesses the address kept by the internal address counter.
After receiving a start condition and the device address word (R/W is “1”), the EEPROM outputs the 8-bit
current address data from the most significant bit following acknowledgment “0”. If the EEPROM
receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops
the read operation and is turned to a standby state. In case the EEPROM has accessed the last address of
the last page at previous read operation, the current address will roll over and returns to zero address. In
case the EEPROM has accessed the last address of the page at previous write operation, the current address
will roll over within page addressing and returns to the first address in the same page. The current address
is valid while power is on. The current address after power on will be indefinite. The random read
operation described below is necessary to define the memory address.
Current Address Read Operation
Device
address
Read data (n+1)
ACK No ACK
32k
1 0 1 0
R
Stop
Start
R/W
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 15 of 20
R1EX24032Axx00A
Random Read:
This is a read operation with defined read address. A random read requires a dummy write to set read
address. The EEPROM receives a start condition, device address word (R/W=0) and memory address 2 ×
8-bit sequentially. The EEPROM outputs acknowledgment “0” after receiving memory address then
enters a current address read with receiving a start condition. The EEPROM outputs the read data of the
address which was defined in the dummy write operation. After receiving acknowledgment “1”(no
acknowledgment) and a following stop condition, the EEPROM stops the random read operation and
returns to a standby state.
Random Read Operation
Device
address
1st Memory
address (n)
2nd Memory
address (n)
Device
address
Read data (n)
No ACK
@@@
# # #
32k
W
R
1 0 1 0
1 0 1 0
R/W
ACK
ACK
R/W
ACK
Start
ACK
Start
Stop
Dummy write
Current address read
Notes: 1. Don't care bit
2. 2nd device address code (#) should be same as 1st (@).
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 16 of 20
R1EX24032Axx00A
Sequential Read:
Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives
acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are
coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”.
The address will roll over and returns address zero if it reaches the last address of the last page. The
sequential read can be continued after roll over. The sequential read is terminated if the EEPROM
receives acknowledgment “1” (no acknowledgment) and a following stop condition.
Sequential Read Operation
Device
address
Read data (n) Read data (n+1) Read data (n+2) Read data (n+m)
R
1 0 1 0
32k
Start
ACK
ACK
R/W
ACK
ACK
No ACK
Stop
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 17 of 20
R1EX24032Axx00A
Notes
Data Protection at VCC On/Off
When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM has a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
•
SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition
during VCC on/off may cause the trigger for the unintentional programming.
•
•
VCC should be turned off after the EEPROM is placed in a standby state.
V
CC should be turned on from the ground level(VSS) in order for the EEPROM not to enter the
unintentional programming mode.
VCC turn on speed should be longer than 10 µs.
•
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 18 of 20
R1EX24032Axx00A
Package Dimensions
R1EX24032ASA00A (PRSP0008DF-B / Previous Code: FP-8DBV)
JEITA Package Code
P-SOP8-3.9x4.89-1.27
RENESAS Code
PRSP0008DF-B
Previous Code
FP-8DBV
MASS[Typ.]
0.08g
*1
D
F
NOTE)
8
5
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
b
p
Index mark
Terminal cross section
( Ni/Pd/Au plating )
Dimension in Millimeters
Reference
Symbol
1
4
Min Nom Max
*3
bp
x
e
Z
D
M
4.89 5.15
3.90
E
A2
A1
A
bp
b1
c
L1
0.102 0.14 0.254
1.73
0.35 0.40 0.45
0.15 0.20 0.25
L
c1
y
θ
HE
e
0° 8°
5.84 6.02 6.20
1.27
Detail F
x
0.25
y
Z
0.10
0.69
L
L1
0.406 0.60 0.889
1.06
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 19 of 20
R1EX24032Axx00A
R1EX24032ATA00A (PTSP0008JC-B / Previous Code: TTP-8DAV)
JEITA Package Code
P-TSSOP8-4.4x3-0.65
RENESAS Code
PTSP0008JC-B
Previous Code
TTP-8DAV
MASS[Typ.]
0.034g
*1
D
F
8
5
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
bp
Terminal cross section
( Ni/Pd/Au plating )
Dimension in Millimeters
Reference
Symbol
Min Nom Max
Index mark
D
E
3.00 3.30
4.40
A2
A1
A
bp
b1
c
L 1
0.03 0.07 0.10
1.10
0.15 0.20 0.25
1
4
*3
e
bp
Z
x
M
0.10 0.15 0.20
c1
θ
HE
e
x
y
0° 8°
6.20 6.40 6.60
L
0.65
0.13
0.10
Detail F
y
Z
L
L1
0.805
0.40 0.50 0.60
1.00
REJ03C0346-0002 Rev.0.02 Jan. 14, 2009
Page 20 of 20
Revision History
R1EX24032Axx00A Data Sheet
Rev. Date
Contents of Modification
Page Description
Initial issue
0.01 Dec. 27, 2007
0.02 Jan.15, 2009
P1 Features
Power dissipation Active(write) change 3.5mA to 3.0mA.
Endurance cycles change 106 cycles to 1,000k cycles @ 25℃.
Data retentions years change 10 years to 100 years @ 25℃.
P4 DC characteristics
Write Vcc current change 3.5 mA to 3.0mA.
Memory cell characteristics new is described.
P5 AC characteristics
Erase/Write endurance is deleted.
Notes1. change Not 100% tested.
Notes3 deleted.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2377-3473
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2008. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2
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