R2A20131SP [RENESAS]
Continuous Conduction Mode PFC Control IC; 连续导通模式PFC控制IC型号: | R2A20131SP |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Continuous Conduction Mode PFC Control IC |
文件: | 总9页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
R2A20131SP
Continuous Conduction Mode PFC Control IC
R03DS0032EJ0200
Rev.2.00
Mar 05, 2012
Description
The R2A20131 is power factor correction control IC of continuous conduction mode.
The R2A20131 is built in Load Tracing Boost, Brownout, Over Voltage Protection, Over Current Protection, FeedBack
loop Open detection and Power Good Function.
Load tracing boost function bring improvement of efficiency at light load with few external parts.
The feedback loop open detection, and over current protection are built in the R2A20131, and can constitute a power
supply system of high reliability with few external parts.
Power Good Function monitors PFC output voltage and can adjust no-good level.
Features
Absolute Maximum Ratings
Supply voltage Vcc: 24 V
Operating junction temperature Tjopr: –40 to +150°C
Electrical Characteristics
Error amplifier reference voltage Vfb: 2.51 V 1.5%
UVLO operation start voltage Vuvlh: 10.5 V 0.7 V
UVLO operation shutdown voltage Vuvll: 9.3 V 0.5 V
UVLO hysteresis voltage Hysuvl: 1.2 V 0.5 V
Functions
Boost converter control with continuous conduction mode
Load Tracing Boost (LTB) function: Vout is decreased at light load and AC 100 V system.
Brownout function
Over Voltage Protection
Feedback loop Open detection
Over Current Protection
Power good information (Open drain output)
Package: Pb-free SOP-16
This Device uses Halogen-Free Molding Compound
Ordering Information
Package
Abbreviation
Taping Abbreviation
(Quantity)
Part No.
Package Name
Package Code
R2A20131SP#W0
—
PRSP0016DH-B
SP
W (2,000 pcs/reel)
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 1 of 8
R2A20131SP
Preliminary
Pin Arrangement
LTB_CAP 1
PG_OUT 2
LTB_RES1 3
LTB_RES2 4
RT 5
16 VCC
15 GD
14 GND
13 CS
12 COMP
11 CSO
10 PFC_IN
BO 6
DELAY 7
CT 8
9
FB
(Top view)
Pin Functions
Pin No.
Pin Name
LTB_CAP
Input/Output
Function
1
2
Input
Load tracing boost stability capacitor connection terminal
Power Good Output terminal for house keeping
Load tracing boost adjust resistor connection terminal1
Load tracing boost adjust resistor connection terminal2
Oscillator frequency setting and internal bias current setting terminal
Brownout input terminal
PG_OUT
LTB_RES1
LTB_RES2
RT
Output
Output
Output
Input/Output
Input
3
4
5
6
BO
7
DELAY
CT
Input/Output
Output
Input
PG_OUT ON Delay adjustable terminal
Oscillator frequency setting terminal
Error amplifier input terminal
8
9
FB
10
11
12
13
14
15
16
PFC_IN
CSO
Input
Power Good detection terminal
Output
Output
Input
Current amplifier output terminal
COMP
CS
Error amplifier output terminal
Current detection terminal
GND
—
Ground
GD
Output
Input
Power MOSFET drive terminal
VCC
Supply voltage terminal
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 2 of 8
R2A20131SP
Preliminary
Block Diagram
CS
VCC
13
16
RT
5
Current
Source
OCP
+
–
–0.3 V
UVL
VREF
VREF
CS_AMP
–
CT
8
CT
UVL
OSC
+
ON Duty < 5%
×10
CSO
11
GD
Driver Block
15
RAMP Block
UVL
BO
6
Brown-out
Block
Protection Block
LTB_CAP
1
FB
–
+
9
LTB Block
LTB_RES1
3
LTB_RES2
4
E-AMP
4.3V
2.51V
UVL
COMP
12
10
DELAY
7
PFC_IN
PowerGood Block
PG_OUT
2
14
GND
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 3 of 8
R2A20131SP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item
Supply voltage
Symbol
VCC
Ratings
–0.3 to +24
1.2
Unit
V
Note
GD sink current
Isnk-gd
Isrc-gd
Idc-snk-gd
Idc-src-gd
Vt-cs
A
3
3
GD source current
–0.8
A
GD DC sink current
GD DC source current
CS terminal voltage
BO terminal current
RT terminal current
COMP terminal current
LTB_RES terminal current
PG_OUT terminal current
Terminal voltage
0.12
A
–80
mA
V
–5 to +0.3
300
Ibom
A
A
mA
A
mA
V
Irt
–200
Icomp
1
Iltb_res
Ipg_out
Vt-group
Vt-group2
Vt-group3
Pt
–100
25
–0.3 to +5.5
–0.3 to VCC
–0.3 to +24
1
4
5
6
7
Terminal voltage2
V
Terminal voltage3
V
Power dissipation
W
Operating junction temperature
Storage temperature
Tj-opr
–40 to +150
–55 to +150
°C
°C
Tstg
Notes: 1. Rated voltages are with reference to the GND terminal.
2. For rated currents, inflow to the IC is indicated by (+), and outflow by (–).
3. Shows the transient current when driving a capacitive load.
4. This is the rated voltage for the following pins:
FB, COMP, BO, RT, CT, LTB_CAP, LTB_RES1, LTB_RES2, CSO, PFC_IN, DELAY
5. This is the rated voltage for the following pin:
GD
6. This is the rated voltage for the following pin:
PG_OUT
7. In case of R2A20131SP (SOP): ja = 120°C/W
This value is a thing mounting on 40 40 1.6 [mm], a glass epoxy board of wiring density 10%.
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 4 of 8
R2A20131SP
Preliminary
Electrical Characteristics
(Ta = 25°C, VCC = 12 V, RT = 33 k, PFC_IN = GND, CT = 470 pF, CS = GND, FB = COMP, BO = 4 V,
LTB_RES1 = 33 k, LTB_RES2 = 33 k)
Item
Symbol
Min
9.8
8.8
0.7
—
Typ
10.5
9.3
Max
11.2
9.8
Unit
V
Test Conditions
Supply
UVLO turn-on threshold Vuvlh
UVLO turn-off threshold Vuvll
V
UVLO hysteresis
Standby current
Operating current
Hysuvl
Istby
Icc
1.2
1.7
V
100
2.5
180
4
A
mA
V
VCC = 8.9 V
—
Brownout BO threshold voltage
Vbo
Ibo
1.35
1.40
(3.3)
1.45
BO pin hysteresis
current
(3.3)
0.92
(3.3)
1.08
A
BO = 1 V, RT = 33 k
BO pin current
Ibo2
Vfb
Ifb
0.05
2.472
–0.4
0.15
2.51
0.4
A
V
BO = 2 V
Error
amplifier
Feedback voltage
Input bias current
2.548
FB-COMP short
–0.15 –0.05
A
Measured pin: FB
FB = 3 V
Open loop gain
Av
—
50
—
—
dB
V
*1
Upper clamp voltage
Vclamp_comp
4.0
4.3
FB = 2.0 V
COMP: Open
Low voltage
Vl-comp
gm
—
0.1
0.3
V
FB = 3.0 V
COMP: Open
Transconductance
Initial accuracy
100
180
270
s
FB = 2.5 V
COMP: 2.5 V
Oscillator
fGD
58.5
—
65
71.5
—
kHz
Measured pin: GD
Ta = –40 to 125°C *1
fout temperature
stability
dfout/dTa
0.1
%/°C
fout voltage stability
RT voltage
fout-line
Vrt
–1.5
1.595
–0.315
–130
0.5
1.65
–0.3
1.5
%
V
VCC = 12 V to 18 V
1.705
–0.285
–60
Over
current
protection
OCP threshold voltage
CS bias current
Vocp
Ics
V
–100
A
Measured pin: CS
CS = –0.1 V
Current
AMP
CSO output voltage
Source current
V-cso
Iltb
0.8
1
1.2
V
Load
tracing
boost
(–21.2)
(–21.2)
(–21.2)
A
BO = 2V, LTB_CAP = 0 V
FB = 2.5 V, PFC_IN = 3 V
Measure pin: FB
1.05
0.95
High threshold voltage
Low threshold voltage
Vltb-hi
3.2
2.9
3.6
3.2
2.5
4.0
3.5
V
V
V
Measured pin: BO
Vltb-lo
POWER
GOOD
PFC_IN threshold
voltage 1
Vpfc_in1
2.42
2.58
function
PFC_IN hysteresis
current
Ipfc_in1
(–10) (–10) (–10)
A
PFC_IN = 3 V, RT = 33 k
1.08
–0.4
—
0.92
PFC_IN current
Ipfc_in2
Ipgh
–0.15 –0.05
A
A
PFC_IN = 2 V
PG OUT leak current
—
5
PFC_IN = GND
VPG_OUT = 5 V
PG OUT low voltage
Vpgl
—
—
0.4
V
PFC_IN = 3 V
PG OUT sink current =
20 mA
Note: *1 Design spec
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 5 of 8
R2A20131SP
Preliminary
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12 V, RT = 33 k, PFC_IN = GND, CT = 470 pF, CS = GND, FB = COMP, BO = 4 V,
LTB_RES1 = 33 k, LTB_RES2 = 33 k)
Item
Symbol
tr-gd
Min
Typ
Max
Unit
Test Conditions
Gate
drive
Gate drive rise time
—
30
100
ns
GD: 1.2 V to 10.8 V
CL = 1000 pF
Gate drive fall time
tf-gd
—
30
100
ns
GD: 10.8 V to 1.2 V
CL = 1000 pF
Gate drive low voltage
Vol1-gd
Vol2-gd
Voh-gd
Dmax
—
—
0.02
0.01
11.9
95
0.1
0.2
—
V
V
Isink = 2 mA
Isink = 1 mA, VCC = 5 V
Isource = –2 mA
Gate drive high voltage
Maximum duty
11.5
90
V
98
%
COMP: Open, FB = 2 V
CSO = GND
Minimum duty
Dmin
Vovp
—
—
0
%
V
FB = 2.5 V
COMP: GND
Over
OVP threshold voltage
VFB VFB VFB
COMP = 2.5 V
voltage
protection
1.065 1.080 1.095
OVP hysteresis
Hys-ovp
Vfblow
50
100
0.3
150
mV
V
COMP = 2.5 V
COMP = 2.5 V
FB low detect threshold
voltage
0.25
0.35
PG on
delay
DELAY threshold
voltage
Vdelay
2.85
–7
3
3.15
–3
V
PFC-IN = 3 V
DELAY charge current
Ichrg-delay
–5
A
DELAY = 2.5 V,
PFC-IN = 3 V
Note: *1 Design spec
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 6 of 8
R2A20131SP
Preliminary
System Diagram
L1
D1
Vout
Rfb2
(ex.6M)
Rpfc2
(ex.6M)
+
Dr1
Cin
Cout
Rfb1
Rpfc1
Aux.
Supply
+
CS
VCC
13
16
RT
Current
Source
5
OCP
+
–
–0.3 V
UVL
VREF
VREF
CS_AMP
–
CT
CT
8
UVL
OSC
+
ON Duty < 5%
×10
CSO
GD
To Dr1
11
Driver Block
15
RAMP Block
UVL
Rbo
(ex.6M)
BO
Brown-out
Block
6
1
Protection Block
LTB_CAP
FB
–
+
9
LTB Block
LTB_RES1
LTB_RES2
3
4
E-AMP
4.3V
2.51V
UVL
COMP
12
10
DELAY
7
2
PFC_IN
PowerGood Block
PG_OUT
14
GND
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 7 of 8
R2A20131SP
Preliminary
Package Dimensions
JEITA Package Code
RENESAS Code
PRSP0016DH-B
Previous Code
FP-16DAV
MASS[Typ.]
0.24g
P-SOP16-5.5x10.06-1.27
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
*1 D
F
16
9
bp
Index mark
Dimension in Millimeters
Terminal cross section
( Ni/Pd/Au plating )
Reference
Symbol
Min Nom Max
10.06 10.5
5.50
D
1
8
bp
E
*3
e
Z
x
M
A2
A1
A
0.00 0.10 0.20
2.20
L1
bp
b1
c
0.34 0.40 0.46
S
0.15 0.20 0.25
c1
θ
HE
e
0°
8°
7.50 7.80 8.00
L
1.27
y
S
x
y
0.12
Detail F
0.15
0.80
Z
L
0.50 0.70 0.90
1.15
L1
R03DS0032EJ0200 Rev.2.00
Mar 05, 2012
Page 8 of 8
Notice
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