RD151TS3324ARPH0 [RENESAS]

Spread Spectrum Clock for EMI Solution; 扩频时钟的EMI解决方案
RD151TS3324ARPH0
型号: RD151TS3324ARPH0
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Spread Spectrum Clock for EMI Solution
扩频时钟的EMI解决方案

时钟
文件: 总9页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RD151TS3314ARP, RD151TS3324ARP  
Spread Spectrum Clock for EMI Solution  
REJ03D0795-0100  
Rev.1.00  
May 11, 2006  
Description  
RD151TS3314ARP and RD151TS3324ARP is a high-performance Spread Spectrum Clock generator. It is suitable for  
EMI solution of electric systems.  
Features  
Supports 20 MHz to 40 MHz operations. Multiple rate (XIN: SSCOUT) = 1: 2  
Input frequency 40 MHz to 80 MHz  
Spread spectrum modulation ; RD151TS3314ARP : ±1.5%, ±0.5% (Central spread modulation)  
RD151TS3324ARP : -3.0%, -1.0% (Down spread modulation)  
Key Specifications  
Supply voltages: VDD = 3.3 V ±0.3 V  
Cycle to cycle jitter = ±100 ps typ.  
Clock output duty cycle = 50 ±5%  
Output slew rate = 0.7 V/ns typ.  
Ordering Information  
Package Code  
(Previous Code)  
Package  
Abbreviation  
Taping Abbreviation  
(Quantity)  
Part Name  
Package Type  
RD151TS3314ARPH0  
RD151TS3324ARPH0  
SOP-8 pin  
(JEDEC)  
PRSP0008DD-C  
(FP-8DCV)  
RP  
H (2,500 pcs / Reel)  
Block Diagram  
VDD  
GND  
NC  
XIN  
1/M  
OSC  
R = 1 M  
Synthesizer  
1/N  
SSCOUT  
XOUT  
SSC Modulator  
Mode Control  
SEL  
SSN  
R = 350 kΩ  
R = 350 kΩ  
Rev.1.00 May 11, 2006 page 1 of 8  
RD151TS3314ARP, RD151TS3324ARP  
Pin Arrangement  
1
2
3
4
XIN  
XOUT  
NC  
8
7
6
5
VDD  
SEL  
SSCOUT  
GND  
SSN  
(Top view)  
Pin Descriptions  
Pin name  
GND  
No.  
Type  
Description  
5
8
3
6
1
2
7
Ground  
Power  
NC  
GND pin  
Power supply pin.  
VDD  
NC  
Don’t connect any VDD or GND.  
Spread spectrum modulated clock output.  
Oscillator input.  
SSCOUT  
XIN  
Output  
Input  
XOUT  
SEL  
Output  
Input  
Oscillator output.  
SSC% mode select pin. LVCMOS level input.  
Pull-down by internal resistor (350 k).  
SSN  
4
Input  
SSC ON/OFF select pin. LVCMOS level input.  
Pull–down by internal resistor (350 k).  
SSC Function Table  
STB  
SEL  
RD151TS3314ARP(Central spread)  
RD151TS3324ARP(Down spread)  
0
0
1
1
0
1
0
1
±1.5%*1  
–3.0%*1  
±0.5%  
–1.0%  
OFF  
OFF  
Note: 1. ±1.5%(TS3314ARP) / -3.0%(TS3324ARP) SSC is selected for default by internal pull-down resistors.  
Clock Frequency Table  
PRODUCT  
XIN(MHz)  
20 to 40  
20 to 40  
SSCOUT(MHz)  
40 to 80  
Multiply rate (XIN: SSCOUT)  
RD151TS3314ARP  
RD151TS3324ARP  
1:2  
1:2  
40 to 80  
Rev.1.00 May 11, 2006 page 2 of 8  
RD151TS3314ARP, RD151TS3324ARP  
Absolute Maximum Ratings  
Item  
Supply voltage  
Symbol  
VDD  
VI  
Ratings  
–0.5 to 4.6  
–0.5 to 4.6  
–0.5 to VDD+0.5  
–50  
Unit  
V
Conditions  
Input voltage  
Output voltage *1  
V
VO  
V
Input clamp current  
Output clamp current  
Continuous output current  
Maximum power dissipation  
Storage temperature  
IIK  
mA  
mA  
mA  
W
VI < 0  
IOK  
–50  
VO < 0  
IO  
±50  
VO = 0 to VDD  
0.7  
Ta = 55°C (in still air)  
Tstg  
–65 to +150  
°C  
Notes: Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.  
1. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings  
are observed.  
Recommended Operating Conditions  
Item  
Symbol  
Min  
3.0  
Typ  
3.3  
Max  
3.6  
Unit  
V
Conditions  
Supply voltage  
VDD  
DC input signal voltage  
High level input voltage  
Low level input voltage  
Input clock duty cycle  
Operating temperature  
–0.3  
0.7×VDD  
–0.3  
45  
VDD+0.3  
VDD+0.3  
0.3×VDD  
55  
V
VIH  
VIL  
V
V
50  
%
°C  
–20  
85  
DC Electrical Characteristics  
Ta = –20 to 85 °C, VDD = 3.0 to 3.6 V  
Item  
Input current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
II  
±20  
±100  
µA  
VI = 0 V or 3.6 V, VDD = 3.6 V,  
XIN pin  
3
VI = 0 V or 3.6 V, VDD = 3.6 V,  
SEL, SSN pins  
Input capacitance  
CI  
pF  
SEL, SSN pins  
DC Electrical Characteristics / SSC Clock Output  
Ta = –20 to 85 °C, VDD = 3.0 to 3.6 V  
Test Conditions  
Item  
Symbol  
VOH  
Min  
VDD-0.2  
Typ  
Max  
Unit  
Output voltage  
V
IOH = –1 mA  
VOL  
200  
mV IOL = 1 mA  
mA VOH = 1.5 V, VDD = 3.3 V  
VOL = 1.5 V, VDD = 3.3 V  
Output current  
IOH  
–19  
19  
IOL  
Output impedance  
40  
Notes: Parameters are target of design. Not 100% tested in production.  
Rev.1.00 May 11, 2006 page 3 of 8  
RD151TS3314ARP, RD151TS3324ARP  
AC Electrical Characteristics / SSC Clock Output  
Ta = 25°C, VDD = 3.3 V, CL = 15 pF  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Notes  
Operating current  
IDD  
16  
22  
mA  
VDD = 3.3 V, CL = 15 pF,  
XIN = 40 MHz  
Cycle to cycle jitter *1  
Slew rate  
tCCS  
|100|  
0.8  
ps  
SEL = 0, CL = 0 pF  
Figure 1  
SSC = ±1.5% (TS3314ARP)  
SSC = –3.0% (TS3324ARP)  
tSL  
4.0  
V/ns VDD = 3.3 V,  
0.2 × VDD to 0.8 × VDD  
Clock duty cycle  
45  
50  
55  
2
%
Stabilization time *2  
ms  
Notes: Parameters are target of design. Not 100% tested in production.  
1. Cycle to cycle jitter is included spread spectrum modulation.  
2. Stabilization time is the time required for the integrated circuit to obtain phase lock of its input signal after  
power up.  
SSCOUT  
tcycle n  
tcycle n+1  
tCCS = (tcycle n)  
(tcycle n+1)  
Figure 1 Cycle to cycle jitter  
Rev.1.00 May 11, 2006 page 4 of 8  
RD151TS3314ARP, RD151TS3324ARP  
Application Information  
1. Recommended Circuit Configuration  
The power supply circuit of the optimal performance on the application of a system should refer to Figure 2.  
VDD decoupling is important to both reduce Jitter and EMI radiation.  
The C1 decoupling capacitor should be placed as close to the VDD pin as possible, otherwise the increased trace  
inductance will negate its decoupling capability.  
VDD  
1
2
3
4
XIN  
(Crystal or Reference input)  
8
7
6
5
C1 C2  
XOUT  
(Crystal or Not connection)  
SEL  
GND GND  
R1  
NC  
SSCOUT  
SSN  
GND  
Notes:  
C1 = High frequency supply decoupling capacitor.  
(0.1 µF recommended)  
C2 = Low frequency supply decoupling capacitor.  
(22 µF recommended)  
R1 = Match value to line impedance.  
Figure 2 Recommended circuit configuration  
Rev.1.00 May 11, 2006 page 5 of 8  
RD151TS3314ARP, RD151TS3324ARP  
2. Example Board Layout Configuration  
VDD  
(+3.3V Supply)  
P
FB  
22 µF  
G
0.1 µF  
Crystal connection  
or Reference input  
1
2
3
4
G
Crystal connection  
or No connection  
7
6
5
R1  
SSCOUT  
G
G
Note:  
Via to GND plane  
R1 = Match value to line impedance.  
FB = Ferrite bead.  
Figure 3 Example Board Layout  
Rev.1.00 May 11, 2006 page 6 of 8  
RD151TS3314ARP, RD151TS3324ARP  
3. Example of TS33XX EMI Solution IC’s Application  
Spread Spectrum  
Modulated Clock  
XTAL  
Memory  
Graphics  
XIN  
CPU & ASIC  
TS33XXA  
XOUT  
SSCOUT  
System Cont.  
Ref.  
Clock  
3.3 V CMOS level ref. Clock  
Figure 4 Ref. Clock Input Example  
Spread Spectrum  
Modulated Clock  
Memory  
Graphics  
XIN  
CPU & ASIC  
SSCOUT  
TS33XXA  
XTAL  
XOUT  
System Cont.  
Figure 5 XTAL Ref. Clock Input Example  
Rev.1.00 May 11, 2006 page 7 of 8  
RD151TS3314ARP, RD151TS3324ARP  
Package Dimensions  
JEITA Package Code  
P-SOP8-3.95x4.9-1.27  
RENESAS Code  
PRSP0008DD-C  
Previous Code  
FP-8DCV  
MASS[Typ.]  
0.085g  
*1  
F
D
NOTE)  
1. DIMENSIONS"*1 (Nom)"AND"*2"  
DO NOT INCLUDE MOLD FLASH.  
2. DIMENSION"*3"DOES NOT  
INCLUDE TRIM OFFSET.  
8
5
bp  
Index mark  
Terminal cross section  
( Ni/Pd/Au plating )  
Dimension in Millimeters  
Reference  
Symbol  
1
4
*3  
Min Nom Max  
e
Z
bp  
x
M
D
E
4.90 5.30  
3.95  
L1  
A2  
A1  
A
bp  
b1  
c
0.10 0.14 0.25  
1.75  
0.34 0.40 0.46  
0.15 0.20 0.25  
L
c1  
θ
y
0° 8°  
5.80 6.10 6.20  
Detail F  
HE  
e
x
1.27  
0.25  
0.10  
y
Z
L
L1  
0.75  
0.40 0.60 1.27  
1.08  
Rev.1.00 May 11, 2006 page 8 of 8  
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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .6.0  

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