RJE0617JSP [RENESAS]

â60V, â1.5A, P Channel Thermal FET Power Switching; â ???? 60V ，Ⅰ ???? 1.5A ， P沟道FET的热交换电源


型号：	RJE0617JSP
厂家：	RENESAS TECHNOLOGY CORP
描述：	â60V, â1.5A, P Channel Thermal FET Power Switching â ???? 60V ，Ⅰ ???? 1.5A ， P沟道FET的热交换电源
文件：	总8页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

RJE0617JSP

–60V, –1.5A, P Channel Thermal FET

Power Switching

R07DS1070EJ0200

Rev.2.00

Jun 06, 2013

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of

high junction temperature like applying over power consumption, over current etc..

Features

•

Logic level operation (3 V Gate drive).

Built-in the over temperature shut-down circuit.

High endurance capability against to the short circuit.

Hysteresis type shut down operation.

High density mounting.

Built-in the current limitation circuit.

Power supply voltage applies 12 V.

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 (FP-8DAV))

Current

Limitation

Circuit

Current

Limitation

Circuit

Gate Resistor

1, 3

2, 4

Source

Gate

Temperature

Sensing

Circuit

Gate

Shut-down

Circuit

Temperature

Sensing

Circuit

Gate

Shut-down

Circuit

Latch

Circuit

Latch

Circuit

5, 6, 7, 8 Drain

MOS1

MOS2

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Symbol

V_DSS

V_GSS

Ratings

–60

–16

Unit

2.5

V_GSS

Note4

I_D

–1.5

9.6

1.5

I_DR

Note 3

I_AP

Note 3

E_AR

°C

Pch ^{Note 1}

Pch ^{Note 2}

Tch

150

–55 to +150

Tstg

Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s

2. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s

3. Tch = 25°C, Rg ≥ 50 Ω

4. It provides by the current limitation lower bound value.

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 1 of 7

RJE0617JSP

Preliminary

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

V_IH

Min

–3

—

–3

Typ

—

Max

—

Unit

Test Conditions

Input voltage

Input current

V_IL

—

–1.2

–100

–50

–10

—

I_IH1

—

µA

°C

Vi = –8 V, V_DS= 0

(Gate non shut down)

I_IH2

—

Vi = –3.5 V, V_DS= 0

Vi = –1.2 V, V_DS= 0

Vi = –8 V, V_DS= 0

Vi = –3.5 V, V_DS= 0

I_IL

—

Input current

I_IH(sd)1

I_IH(sd)2

Tsd

Thr

–0.8

–0.35

175

105

—

(Gate shut down)

—

Shut down temperature

Return temperature

Gate operation voltage

Drain current

(Current limitation value)

Notes; 5. Pulse test

—

Channel temperature

—

Vop

I_{D limt}

–12

V_GS= –12 V, V_DS= –10 V ^{Note 5}

–1.5

—

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

I_D

–1.5

—

–12

–40

—

V_GS= –3.5 V, V_DS= –10 V

V_GS= –1.2 V, V_DS= –10 V

V_GS= –12 V, V_DS= –10 V ^{Note 7}

I_D

–1.5

–0.8

–60

I_D

—

Drain to source breakdown

voltage

V_(BR)DSS

—

I_D= –10 mA, V_GS= 0

Gate to source breakdown

voltage

V_(BR)GSS

I_GSS

–16

2.5

—

I_G= –800 μA, V_DS= 0

I_G= 100 μA, V_DS= 0

V_GS= –8 V, V_DS= 0

V_GS= –3.5 V, V_DS= 0

V_GS= –1.2 V, V_DS= 0

V_GS= 2.4 V, V_DS= 0

V_GS= –8 V, V_DS= 0

V_GS= –3.5 V, V_DS= 0

V_DS= –60 V, V_GS= 0

V_DS= –48 V, V_GS= 0

Ta = 125°C

Gate to source leak current

—

–100

–50

–1

μA

I_GSS

—

I_GSS

—

I_GSS

—

100

—

Input current (shut down)

I_GS(OP)

I_DSS

—

–0.8

–0.35

—

Zero gate voltage drain current

—

–10

I_DSS

—

Gate to source cutoff voltage

Forward transfer admittance

Static drain to source on state

resistance

V_GS(off)

|y_fs|

–2.2

1.5

—

–3.4

—

V_DS= –10 V, I_D= –1 mA

I_D= –0.75 A, V_GS= –10 V ^{Note 7}

I_D= –0.4 A, V_GS= –3V ^{Note 7}

I_D= –0.75 A, V_GS= –4 V ^{Note 7}

I_D= –0.75 A, V_GS= –10 V ^{Note 7}

V_DS= –10 V, V_GS= 0,

f = 1MHz

2.7

R_DS(on)

Coss

445

363

272

213

800

425

350

—

mΩ

—

Output capacitance

—

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

—

0.9

3.4

3.2

6.3

–0.8

—

μs

V_GS= –10 V, I_D= –0.75 A,

R_L= 40 Ω

Turn-off delay time

Fall time

Body-drain diode forward voltage

Body-drain diode reverse

recovery time

V_DF

t_rr

I_F= –1.5 A, V_GS= 0

di_F/dt = 50 A/μs

Over load shut down

operation time ^{Note 8}

Notes: 6. Pulse test

t_os

—

5.4

—

V_GS= –5 V, V_DD= –16 V

7. Including the junction temperature rise of the over loaded condition.

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 2 of 7

RJE0617JSP

Preliminary

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

4.0

3.0

2.0

1.0

−100

−10

Ta = 25°C

Thermal shut down

operation area

Test condition.

1 shot Pulse

When using the glass epoxy board.

(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)

1 Driver Operation

−1

−0.1

Operation

in this area

is limited R_DS(on)

−0.01

−0.1

−1

−10

−100

100

150

200

Drain to Source Voltage V_DS(V)

Note 7:

When using the glass epoxy board.

(FR4 40 x 40 x 1.6 mm)

Ambient Temperature Ta (°C)

Typical Output Characteristics

Typical Transfer Characteristics

−1.5

−1.0

−5

−4

_DS= −10 V

−5 V

−6 V

Pulse Test

−4 V

−3.5 V

−8 V

−3

−2

−1

−10 V

V_GS= −3 V

−0.5

Tc = 150°C

25°C

−40°C

Pulse Test

−2

−4

−6

−8

−10

−1

−2

−3

−4

Gate to Source Voltage V_GS(V)

Drain to Source Voltage V_DS(V)

Drain Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source On State Resistance

vs. Drain Current

−500

−400

10000

Pulse Test

1000

100

V_GS= −3 V

−10 V

−300

−200

−4 V

−0.75 A

−0.4 A

−100

I_D= −0.2 A

−0.1

−1

Drain Current I_D(A)

−10

−2

−4

−6

−8 −10 −12

Gate to Source Voltage V_GS(V)

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 3 of 7

RJE0617JSP

Preliminary

Static Drain to Source On State Resistance

vs. Temperature

Body-Drain Diode Reverse

Recovery Time

1000

800

600

400

200

Pulse Test

_D= −1.5 A

−0.75 A

−0.4 A

V_GS= −3 V

100

−0.4 A

−0.75 A

I_D= −1.5 A

−4 V

di / dt = 50 A /μs

V_GS= 0

−10 V

−50 −25

25 50 75 100 125 150

−0.1

−1

−10

Case Temperature Tc (°C)

Reverse Drain Current I_DR(A)

Typical Capacitance vs.

Drain to Source Voltage

Switching Characteristics

1000

100

V_GS= 0

f = 1 MHz

Coss

d(off)

d(on)

V_GS= −10 V, V_DD= −30 V

PW = 300 μs, duty ≤ 1 %

0.1

−0.1

−1

−10

−0 −10 −20 −30 −40 −50 −60

Drain Current I_D(A)

Drain to Source Voltage V_DS(V)

Reverse Drain Current vs.

Source to Drain Voltage

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

−16

–1.5

–1.0

Pulse Test

−14

−12

−10

−8

V_GS= 0 V

–5 V

V_DD= −16 V

−6

–0.5

−4

−2

0.1

100

–0.5

–1.0

–1.5

Shutdown Time of Load-Short Test Pw (ms)

Source to Drain Voltage V_SD(V)

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 4 of 7

RJE0617JSP

Preliminary

Forward transfer admittance vs.

Drain Current

Shutdown Case Temperature vs.

Gate to Source Voltage

200

180

160

140

Ta = –40°C

25°C

150°C

120

100

V_DS= –10 V

Pulse Test

I_D= –0.2 A

0.1

–0.1

–1

–10

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

D = 1

0.5

0.1

0.01

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

D =

0.001

0.0001

1 m

10 m

100 m

Pulse Width PW (S)

100

1000

10000

Normalized Transient Thermal Impedance vs. Pulse Width

(Operatioon of 2 devices; allowable value per device)

D = 1

0.5

0.1

0.01

0.001

When using the glass epoxy board

(FR4 40 x 40 x 1.6 mm)

D =

0.0001

1 m

10 m

100 m

100

1000

10000

Pulse Width PW (S)

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 5 of 7

RJE0617JSP

Preliminary

Switching Time Test Circuit

Waveform

Vout

Monitor

Vin

Vin Monitor

10%

D.U.T.

R_L

90%

V_DD

= –30 V

Vin

–10 V

90%

10%

Vout

d(off)

d(on)

Avalanche Test Circuit

Avalanche Waveform

V_DSS

V_DSS– V_DD

V_DS

Monitor

E_AR

L · I_AP·

I_AP

Monitor

V_(BR)DSS

V_DD

D. U. T

I_AP

V_DS

Vin

–10 V

50 Ω

I_D

V_DD

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 6 of 7

RJE0617JSP

Preliminary

Package Dimensions

Package Name

SOP-8

JEITA Package Code

RENESAS Code

PRSP0008DD-D

Previous Code

FP-8DAV

MASS[Typ.]

0.085g

P-SOP8-3.95 × 4.9-1.27

b_p

Index mark

NOTE)

Terminal cross section

(Ni/Pd/Au plating)

1. DIMENSIONS "*1(Nom)" AND "*2"

DO NOT INCLUDE MOLD FLASH.

2. DIMENSION "*3" DOES NOT

INCLUDE TRIM OFFSET.

b_p

Dimension in Millimeters

Reference

Symbol

Min Nom Max

4.90

3.95

5.3

L₁

A₂

A₁

0.10

0.14 0.25

1.75

0.34 0.40 0.46

b_p

b₁

0.15 0.20 0.25

c₁

0° 8°

5.80 6.10 6.20

1.27

H_E

Detail F

0.25

0.1

0.75

L₁

0.40 0.60 1.27

1.08

Ordering Information

Orderable Part Number

Quantity

2500 pcs/reel

Shipping Container

RJE0617JSP-00-J0

Taping

Note: The symbol of 2nd "-" is occasionally presented as "#".

R07DS1070EJ0200 Rev.2.00

Jun 06, 2013

Page 7 of 7

Notice

1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for

the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the

use of these circuits, software, or information.

2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics

assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or

technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or

others.

4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or

third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.

5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on

the product's quality grade, as indicated below.

"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic

equipment; and industrial robots etc.

"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.

Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical

implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it

in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses

incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.

6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage

range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the

use of Renesas Electronics products beyond such specified ranges.

7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and

malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the

possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to

redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,

please evaluate the safety of the final products or systems manufactured by you.

8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics

products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes

no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or

regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the

development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and

regulations and follow the procedures required by such laws and regulations.

10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the

contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics

products.

11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.

(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.

SALES OFFICES

http://www.renesas.com

Refer to "http://www.renesas.com/" for the latest and detailed information.

Renesas Electronics America Inc.

2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.

Tel: +1-408-588-6000, Fax: +1-408-588-6130

Renesas Electronics Canada Limited

1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada

Tel: +1-905-898-5441, Fax: +1-905-898-3220

Renesas Electronics Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K

Tel: +44-1628-651-700, Fax: +44-1628-651-804

Renesas Electronics Europe GmbH

Arcadiastrasse 10, 40472 Düsseldorf, Germany

Tel: +49-211-65030, Fax: +49-211-6503-1327

Renesas Electronics (China) Co., Ltd.

7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China

Tel: +86-10-8235-1155, Fax: +86-10-8235-7679

Renesas Electronics (Shanghai) Co., Ltd.

Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China

Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898

Renesas Electronics Hong Kong Limited

Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong

Tel: +852-2886-9318, Fax: +852 2886-9022/9044

Renesas Electronics Taiwan Co., Ltd.

13F, No. 363, Fu Shing North Road, Taipei, Taiwan

Tel: +886-2-8175-9600, Fax: +886 2-8175-9670

Renesas Electronics Singapore Pte. Ltd.

80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949

Tel: +65-6213-0200, Fax: +65-6213-0300

Renesas Electronics Malaysia Sdn.Bhd.

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: +60-3-7955-9390, Fax: +60-3-7955-9510

Renesas Electronics Korea Co., Ltd.

11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea

Tel: +82-2-558-3737, Fax: +82-2-558-5141

Colophon 2.2

RJE0617JSP [RENESAS]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E