RJH60F7 [RENESAS]
Silicon N Channel IGBT High Speed Power Switching;
| 型号： | RJH60F7 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel IGBT High Speed Power Switching 双极性晶体管 |
| 文件： | 总7页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJH60F7ADPK
REJ03G1837-0200
Rev.2.00
Silicon N Channel IGBT
High Speed Power Switching
Jun 11, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
1. Gate
2. Collector
3. Emitter
G
4. Colloector (Flange)
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
Unit
V
600
±30
V
Collector current
Tc = 25°C
90
A
Tc = 100°C
IC
50
A
Collector peak current
ic(peak) Note1
180
A
Collector to emitter diode forward peak current
Collector dissipation
iDF(peak) Note2
100
A
PC
j-c
j-c
Tj
328.9
0.38
2.0
W
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
°C/W
°C/W
°C
°C
150
Storage temperature
Tstg
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 1 of 6
RJH60F7ADPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Symbol
ICES
Min
4
Typ
Max
100
±1
8
Unit
A
A
V
Test Conditions
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V
IC = 90 A, VGE = 15V
VCE = 25 V
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
Note3
Note3
1.35
1.6
4700
198
83
1.75
V
V
Input capacitance
pF
pF
pF
ns
ns
ns
ns
V
V
GE = 0 V
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Switching time
48
IC = 30 A, Resistive Load
V
V
CC = 300 V
GE = 15 V
30
td(off)
tf
VECF1
trr
110
95
Rg = 5 Note3
Note3
C-E diode forward voltage
1.6
140
2.1
IF = 20 A
C-E diode reverse recovery time
ns
IF = 20 A
diF/dt = 100 A/s
Notes: 3. Pulse test
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 2 of 6
RJH60F7ADPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
1000
100
10
9.4 V
9.2 V
Pulse Test
Ta = 25
160
120
80
40
0
°C
9.6 V
9.8 V
10 V
15 V
9 V
8.8 V
8.6 V
8.4 V
8.2 V
1
VGE = 8 V
Tc = 25°C
Single pulse
0.1
0
1
2
3
4
5
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Typical Transfer Characteristics
7
VCE = 10 V
Pulse Test
Ta = 25
160
120
80
40
0
Pulse Test
°
C
6
5
4
3
2
1
0
IC = 20 A
50 A
90 A
Tc = 75°C
25°C
–25°C
6
8
10 12 14 16 18 20
0
2
4
6
8
10
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
2.0
8
7
6
5
4
3
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
IC = 90 A
IC = 10 mA
50 A
20 A
1 mA
VCE = 10 V
Pulse Test
VGE = 15 V
Pulse Test
−25
0
25 50 75 100 125 150
−25
0
25 50 75 100 125 150
Junction Temparature Tj (
°C)
Junction Temparature Tj (
°C)
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 3 of 6
RJH60F7ADPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Forward Current vs. Forward Voltage (Typical)
10000
1000
100
100
Cies
VGE = 0 V
Pulse Test
Ta = 25°C
80
60
40
Coes
Cres
20
0
VGE = 0 V
f = 1 MHz Ta = 25°C
10
0
50
100 150 200 250 300
0
1
2
3
4
5
C-E Diode Forward Voltage VCEF (V)
Collector to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
Dynamic Input Characteristics (Typical)
1000
100
10
800
16
IC = 50 A
VGE
Ta = 25°C
VCE
t
600
400
200
0
12
8
d(off)
VCC = 600 V
300 V
t
f
t
d(on)
t
r
4
VCC = 600 V
300 V
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25
°
C, Resistive load
1
0
200
0
1
10
100 1000
40
80
120
160
Gate Charge Qg (nc)
Collector Current IC (A)
Switching Characteristics (Typical) (2)
Switching Characteristics (Typical) (3)
1000
100
10
10000
1000
100
IC = 50 A, RL = 6 Ω
VGE = 15 V, Ta = 25°C
IC = 50 A, VGE = 15 V
RL = 6 Ω, Rg = 5 Ω
t
d(off)
t
f
t
t
d(off)
d(on)
t
r
t
t
t
d(on) r
f
10
0
20 40 60 80 100 120 140
Case Temperature Tc (°C)
1
10
Gate Resistance Rg (Ω)
100
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 4 of 6
RJH60F7ADPK
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Tc = 25°C
10
1
D = 1
0.5
θ – c(t) = γs (t) • θ – c
0.2
0.1
j
j
θ – c = 0.38°C/W, Tc = 25°C
j
0.1
PW
T
PDM
D =
PW
0.01
1 shot pulse
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Tc = 25°C
10
1
D = 1
0.5
0.2
0.1
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 2°C/W, Tc = 25°C
j
0.1
PW
T
PDM
D =
0.01
1 shot pulse
PW
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
Waveform
90%
RL
10%
Vin
Vin Monitor
90%
90%
Rg
VCC
D.U.T.
10%
Ic
10%
Vin = 15 V
t
d(off)
t
t
f
tr
d(on)
t
t
off
on
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 5 of 6
RJH60F7ADPK
Preliminary
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Previous Code
MASS[Typ.]
5.0g
TO-3P / TO-3PV
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ
3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJH60F7ADPK-00-T0
360 pcs
Box (Tube)
REJ03G1837-0200 Rev.2.00
Jun 11, 2010
Page 6 of 6
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