RJH65T14DPQ-T0 [RENESAS]
Induction Heating;型号: | RJH65T14DPQ-T0 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Induction Heating |
文件: | 总10页 (文件大小:315K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
R07DS1256EJ0100
Rev.1.00
Mar 16, 2015
Features
Optimized for current resonance application
Low collector to emitter saturation voltage
V
CE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
Ratings
Unit
V
650
30
VGES
V
Note1
Collector current
Tc = 25 °C
IC
100
A
Note1
Tc = 100 °C
IC
50
A
Collector peak current
iC(peak) Note1
180
A
Collector to emitter diode Tc = 25 °C
Forward current
IDF
40
A
Tc = 100 °C
IDF
20
A
Collector to emitter diode forward peak current
Collector dissipation
iDF(peak) Note2
100
A
PC
250
W
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
j-c Note3
j-cd Note3
Tj Note4
Tstg
0.6
°C/W
°C/W
°C
°C
1.33
175
Storage temperature
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
3. Value at Tc = 25C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 1 of 9
RJH65T14DPQ-A0
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Min
4
Typ
Max
100
±1
7
Unit
A
A
V
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V
VCE = 25 V
Note5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.45
1750
69
1.75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
nC
nC
nC
ns
V
GE = 0
f = 1 MHz
Output capacitance
Reveres transfer capacitance
Total gate charge
34
80
VGE = 15 V
CE = 300 V
IC = 50 A
V
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Qge
Qgc
td(on)
tr
15
35
38
VCC = 400 V
GE = 15 V
IC = 50 A
V
30
ns
Turn-off delay time
Fall time
td(off)
tf
125
115
1.3
1.2
2.5
38
ns
Rg = 10
TC = 25 °C
Inductive load
ns
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Eon
mJ
mJ
mJ
ns
Eoff
Etotal
td(on)
tr
VCC = 400 V
GE = 15 V
IC = 50 A
V
30
ns
Turn-off delay time
Fall time
td(off)
tf
130
135
1.45
1.45
2.90
560
ns
Rg = 10
TC = 150 °C
Inductive load
ns
Turn-on loss energy
Turn-off loss energy
Total switching energy
Tail loss
Eon
mJ
mJ
mJ
J
Eoff
Etotal
Etail
VCC = 300 V, VGE = 20 V
IC = 50 A, Rg = 15
Tc = 125C
Current resonance circuit
C-E diode forward voltage
VECF
trr
1.2
1.6
V
IF = 20 A Note5
C-E diode reverse recovery time
250
ns
IF = 20 A
diF/dt = 300 A/s
Notes: 5. Pulse test
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 2 of 9
RJH65T14DPQ-A0
Main Characteristics
Collector Dissipation vs.
Maximum DC Collector Current vs.
Case Temperature
Case Temperature
120
100
80
60
40
20
0
300
100
0
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Typical Transfer Characteristics
120
90
1000
100
10
VCE = 10 V
Pulse Test
60
30
0
150
°C
1
Tc = 25
°
C
0.1
0.01
Tc = 25°C
Single pulse
0
2
4
6
8
10
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
Typical Output Characteristics
120
90
60
30
0
120
90
60
30
0
Pulse Test
Pulse Test
10V
10V
Tc = 25°C
Tc = 150°C
9.0V
8.0V
9.0V
8.0V
15 V
15 V
VGE = 7.0 V
VGE = 7.0 V
4
0
1
2
3
5
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 3 of 9
RJH65T14DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
5
Tc = 25
°C
Tc = 150
°C
Pulse Test
Pulse Test
IC = 100 A
50 A
4
3
2
1
0
4
3
2
1
0
IC = 100 A
50 A
25 A
25 A
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
10
8
3.0
VGE = 15 V
Pulse Test
IC = 100 A
50 A
2.5
2.0
1.5
1.0
0.5
0
IC = 10 mA
1.0 mA
6
4
25 A
2
VCE = 10 V
Pulse Test
0
−25
0
25 50 75 100 125 150
−25
0
25 50 75 100 125 150
Case Temparature Tc (°C)
Case Temparature Tc ( C)
°
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 4 of 9
RJH65T14DPQ-A0
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
10
1000
100
10
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
t
f
t
d(off)
t
d(on)
1
Eoff
Eon
t
r
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150
°
C
1
10
0.1
100
10
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Switching Characteristics (Typical) (3)
VCC = 400 V, VGE = 15 V
1000
100
10
VCC = 400 V, VGE = 15 V
I
C = 50 A, Tc = 150
°C
IC = 50 A, Tc = 150
°
C
t
f
t
d(off)
t
d(on)
Eon
t
r
Eoff
1
1
10
100
1
10
100
Gate Registance Rg (Ω)
Gate Registance Rg (Ω)
(Inductive load)
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
1000
100
10
10
VCC = 400 V, VGE = 15 V
VCC = 400 V, VGE = 15 V
IC = 50 A, Rg = 10 Ω
IC = 50 A, Rg = 10 Ω
t
d(off)
t
f
t
t
d(on)
r
Eon
Eoff
100
1
25
1
50
75
100
125
150
25
50
75
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 5 of 9
RJH65T14DPQ-A0
Typical Capacitance vs.
Dynamic Input Characteristics (Typical)
800 16
Collector to Emitter Voltage
10000
1000
100
10
VGE
VGE = 0 V Tc = 25
f = 1 MHz
°C
VCC = 480 V
300 V
Cies
600
400
200
0
12
8
120 V
VCE
Coes
Cres
4
VCC = 480 V
300 V
IC = 50 A
Ta = 25
°C
120 V
1
0
100
0
50
100 150 200 250 300
0
20
40
60
80
Collector to Emitter Voltage VCE (V)
Gate Charge Qg (nC)
Reverse Recovery Time vs.
Forward Current (Typical)
Forward Current vs. Forward Voltage (Typical)
100
1000
800
600
400
200
0
VCC = 300 V
diF/dt = 300 A/us
Tc = 25°C
80
60
40
20
0
150°C
Tc = 150°C
25°C
VCE = 0 V
Pulse Test
0
20
40
60
80
100
0
1
2
3 4
Forward Current IF (A)
C-E Diode Forward Voltage VCEF (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 6 of 9
RJH65T14DPQ-A0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
1
D = 1
0.5
0.2
θ – c(t) = γs (t) • θ – c
j j
j
θ – c = 0.60°C/W, Tc = 25°C
0.05
0.1
PW
T
PDM
D =
0.02
0.01
1 shot pulse
PW
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
1
D = 1
0.5
0.2
0.1
0.05
θ – c(t) = γs (t) • θ – c
θ – c = 1.33°C/W, Tc = 25°C
j
j
j
0.1
PW
T
PDM
D =
0.02
0.01
1 shot pulse
PW
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 7 of 9
RJH65T14DPQ-A0
Waveform
Switching Time Test Circuit
90%
VGE
Diode clamp
10%
L
IC
90%
90%
D.U.T
VCC
Rg
10%
tf
10%
tr
td(off)
td(on)
Diode Reverse Recovery Time Test Circuit
VCC
Waveform
IF
D.U.T
diF/dt
trr
L
IF
0
Irr
0.5 Irr
0.9 Irr
Rg
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 8 of 9
RJH65T14DPQ-A0
Package Dimensions
Package Name
TO-247A
JEITA Package Code
RENESAS Code
PRSS0003ZH-A
Previous Code
MASS[Typ.]
6.14g
Unit: mm
⎯
⎯
5.02 0.19
φ3.60 0.1
15.94 0.19
+ 0.1
– 0.2
2.10
13.26
1.27 0.13
5.45
0.71 0.1
2.41
5.45
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJH65T14DPQ-A0#T0
240 pcs
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Page 9 of 9
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
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Refer to "http://www.renesas.com/" for the latest and detailed information.
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